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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
187 pcs
|
187 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Packages | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSH44H11TF from onsemi is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, designed for surface mounting.
This transistor offers a maximum collector current of 8A and a collector-emitter breakdown voltage of 80V. Its DC current gain (hFE) is a minimum of 40 at 4A and 1V. The Vce saturation voltage is a maximum of 1V at 400mA and 8A, with a transition frequency of 50MHz. The maximum power dissipation is rated at 1.75W, and it can operate at temperatures up to 150°C (TJ).
The KSH44H11TF is specified with a collector cutoff current of 10μA. It is packaged in a tape and reel format for automated assembly processes. This component is suitable for designs requiring a robust NPN transistor with significant current handling capabilities in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 8A.
The collector-emitter breakdown voltage is 80V.
The maximum power dissipation is 1.75W.
The operating temperature range is up to 150°C (TJ).
The KSH44H11TF is available in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package.
The KSH44H11TF is designed for surface mounting.