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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,788 pcs
|
1788 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FJP13007H1TU is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for high-voltage switching applications with a collector-emitter voltage (Vceo) of 400V and a collector current (Ic) rating of 8A. The device can dissipate up to 80W of power, making it suitable for power supply and motor control circuits.
The transistor features a transition frequency (ft) of 4 MHz and a minimum DC current gain (hFE) of 15 at 2A collector current and 5V Vce. The collector-emitter saturation voltage is typically 3V maximum at 2A base current and 8A collector current. These characteristics enable efficient switching in moderate-frequency applications.
The FJP13007H1TU is offered in a TO-220-3 through-hole package, which provides good thermal performance and ease of mounting on heatsinks. The operating junction temperature is rated up to 150°C. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
400V.
8A.
80W.
TO-220-3.
150°C.
Yes, RoHS3 compliant (unverified).
4 MHz.