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6,020 pcs
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6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BCP56-10115 is an NPN medium power transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 80 V and a continuous collector current of 1 A, with a peak collector current of 2 A for single-pulse conditions.
This transistor offers a DC current gain (hFE) ranging from 63 to 160 at Vce = 2 V and Ic = 150 mA, making it suitable for a variety of driver and amplifier circuits. It is housed in a compact SOT223 (SC-73) surface-mount package with four leads, providing good power dissipation for its size.
Typical applications include linear voltage regulators, MOSFET drivers, low-side switches, power management, and battery-driven devices. The device operates over a junction temperature range of -55 °C to 150 °C and is RoHS compliant.
The maximum collector-emitter voltage (Vceo) is 80 V with open base.
The maximum continuous collector current (Ic) is 1 A, with a peak collector current of 2 A for single pulses up to 1 ms.
The BCP56-10115 is available in a SOT223 (SC-73) surface-mount package with 4 leads.
The ambient temperature range is -55 °C to 150 °C, and the storage temperature range is -65 °C to 150 °C.
Yes, the BCP56-10115 is marked as RoHS3 compliant.