BCP56-10115 BCP56-10115 is an NPN medium power transistor with 80 V collector-emitter voltage and 1 A collector current. It comes in a surface-mount SOT223 package.
Mfr Part #:

BCP56-10115

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
BCP56-10115 is an NPN medium power transistor with 80 V collector-emitter voltage and 1 A collector current. It comes in a surface-mount SOT223 package.
Total Stock: 6,020 pcs

BCP56-10115 Available from 1 distributor

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BCP56-10115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature Range
Base Current (IB)
Collector Current (Ic)
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
DC Current Gain (hFE)
Emitter-Base Voltage (VEBO)
Junction Temperature (TJ)
Mounting Type
Number of Leads
Peak Base Current (IBM)
Peak Collector Current (ICM)
SVHC Present
Storage Temperature
Storage Temperature Range
Tape & Reel
Termination Style
Total Power Dissipation (Ptot)

BCP56-10115 Description

Short technical summary and product information.

The BCP56-10115 is an NPN medium power transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 80 V and a continuous collector current of 1 A, with a peak collector current of 2 A for single-pulse conditions.

 

This transistor offers a DC current gain (hFE) ranging from 63 to 160 at Vce = 2 V and Ic = 150 mA, making it suitable for a variety of driver and amplifier circuits. It is housed in a compact SOT223 (SC-73) surface-mount package with four leads, providing good power dissipation for its size.

 

Typical applications include linear voltage regulators, MOSFET drivers, low-side switches, power management, and battery-driven devices. The device operates over a junction temperature range of -55 °C to 150 °C and is RoHS compliant.

BCP56-10115 Quick Information

Product Type: Bipolar (BJT) Transistor
Series: BCP56
Canonical Name: BCP56-10 NPN medium power transistor
Subcategory: Single Bipolar Junction Transistor

BCP56-10115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BCP56-10115 Features

  • 80 V collector-emitter voltage rating.
  • 1 A continuous collector current capability.
  • Surface-mount SOT223 package.
  • RoHS3 compliant for environmental safety.
  • Operates up to 150 °C junction temperature.

BCP56-10115 Applications

  • Ideal for linear voltage regulators.
  • Used in MOSFET driver circuits.
  • Suitable for low-side switching applications.
  • Common in power management systems.
  • Works well in battery-driven devices.

BCP56-10115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BCP56-10115?

The maximum collector-emitter voltage (Vceo) is 80 V with open base.

What is the maximum collector current of the BCP56-10115?

The maximum continuous collector current (Ic) is 1 A, with a peak collector current of 2 A for single pulses up to 1 ms.

What is the package type of the BCP56-10115?

The BCP56-10115 is available in a SOT223 (SC-73) surface-mount package with 4 leads.

What is the operating temperature range of the BCP56-10115?

The ambient temperature range is -55 °C to 150 °C, and the storage temperature range is -65 °C to 150 °C.

Is the BCP56-10115 RoHS compliant?

Yes, the BCP56-10115 is marked as RoHS3 compliant.

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