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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
FCX619QTA
FCX619QTA
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Diodes Incorporated
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 - - - - - - - - 3 A 300 @ 200mA, 2V - - - 165MHz - - Surface Mount -55°C ~ 150°C (TJ) 700 mW - - SOT-89-3 - NPN 320mV @ 100mA, 2.75A 50 V
KSD794AYSTU
KSD794AYSTU
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On Semiconductor
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 - - - - - - - - 3 A 160 @ 500mA, 5V - - - 60MHz - - Through Hole 150°C (TJ) 1 W - - TO-126-3 - NPN 2V @ 150mA, 1.5A 60 V
ZXTN25060BZQTA
ZXTN25060BZQTA
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Diodes Incorporated
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 - - - - - - - - 5 A 100 @ 10mA, 2V - - - 185MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.1 W - - SOT-89-3 - NPN 305mV @ 500mA, 5A 60 V
PHE13009,127
PHE13009,127
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WeEn Semiconductors
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 - - - - - - - - 12 A 8 @ 5A, 5V - - - - - - Through Hole 150°C (TJ) 80 W - - TO-220AB - NPN 2V @ 1.6A, 8A 400 V
2SD2212T100
2SD2212T100
ROHM Semiconductor
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 - - - - - - - - 2 A 1000 @ 1A, 2V - - - 80MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN - Darlington 1.5V @ 1mA, 1A 60 V
FZT955-TP
FZT955-TP
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Micro Commercial
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 - - - - - - - - 4 A 100 @ 1A, 5V - - - 30MHz - - Surface Mount 150°C (TJ) 800 mW - - SOT-223 - PNP 650mV @ 5mA, 100mA 140 V
2SB1708TL
2SB1708TL
ROHM Semiconductor
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 - - - - - - - - 3 A 270 @ 200mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 500 mW - - TSMT3 - PNP 250mV @ 30mA, 1.5A 30 V
ZTX458STZ
ZTX458STZ
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Diodes Incorporated
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 - - - - - - - - 300 mA 100 @ 50mA, 10V - - - 50MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 500mV @ 6mA, 50mA 400 V
ZTX455STZ
ZTX455STZ
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 100MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 700mV @ 15mA, 150mA 140 V
BCX38CSTZ
BCX38CSTZ
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Diodes Incorporated
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 - - - - - - - - 800 mA 10000 @ 500mA, 5V - - - - - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN - Darlington 1.25V @ 8mA, 800mA 60 V
BF393 PBFREE
BF393 PBFREE
Central Semiconductor Corp
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole -65°C ~ 150°C (TJ) 1.5 W - - TO-92 - NPN 900mV @ 2mA, 20mA 300 V
BUJD203AX,127
BUJD203AX,127
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WeEn Semiconductors
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 - - - - - - - - 4 A 10 @ 1mA, 5V - - - - - - Through Hole 150°C (TJ) 26 W - - TO-220F - NPN 1V @ 600mA, 3A 425 V
BUJD103AD,118
BUJD103AD,118
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WeEn Semiconductors
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 - - - - - - - - 4 A 11 @ 2A, 5V - - - - - - Surface Mount 150°C (TJ) 80 W - - DPAK - NPN 1V @ 1A, 4A 400 V
BUJD203AD,118
BUJD203AD,118
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WeEn Semiconductors
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 - - - - - - - - 4 A 11 @ 2A, 5V - - - - - - Surface Mount 150°C (TJ) 80 W - - DPAK - NPN 1V @ 600mA, 3A 425 V
BUJ103AX,127
BUJ103AX,127
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WeEn Semiconductors
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 - - - - - - - - 4 A 12 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 26 W - - TO-220F - NPN 1V @ 600mA, 3A 400 V
BUJ403A/DG,127
BUJ403A/DG,127
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WeEn Semiconductors
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 - - - - - - - - 6 A 20 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 100 W - - TO-220AB - NPN 1V @ 400mA, 2A 550 V
2N3417 APM PBFREE
2N3417 APM PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 500 mA 180 @ 2mA, 4.5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 1.5 W - - TO-92 - NPN 300mV @ 3mA, 50mA 50 V
2SD1223(TE16L1,NQ)
2SD1223(TE16L1,NQ)
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Toshiba
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 - - - - - - - - 4 A 1000 @ 3A, 2V - - - - - - Surface Mount 150°C (TJ) 1 W - - PW-MOLD - NPN - Darlington 1.5V @ 6mA, 3A 80 V
CZTA44HC TR
CZTA44HC TR
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Central Semiconductor Corp
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 - - - - - - - - 2 A 30 @ 1A, 10V - - - 10MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223 - NPN 1.5V @ 200mA, 2A 400 V
ZXTP2027FQTA
ZXTP2027FQTA
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Diodes Incorporated
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 - - - - - - - - 4 A 100 @ 2A, 2V - - - 165MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-23-3 - PNP 240mV @ 200mA, 4A 60 V
FZT489QTA
FZT489QTA
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 1A, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - SOT-223-3 - NPN 600mV @ 200mA, 2A 30 V
APT27HZTR-G1
APT27HZTR-G1
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Diodes Incorporated
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 - - - - - - - - 800 mA 6 @ 300mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 800 mW - - TO-92 - NPN 500mV @ 40mA, 200mA 450 V
PBSS5220V,115
PBSS5220V,115
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Nexperia USA Inc.
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 - - - - - - - - 2 A 155 @ 1A, 2V - - - 185MHz - - Surface Mount 150°C (TJ) 900 mW - - SOT-666 - PNP 390mV @ 200mA, 2A 20 V
STLD128DNT4
STLD128DNT4
STMicroelectronics
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 - - - - - - - - 4 A 8 @ 2A, 5V - - - - - - Surface Mount 150°C (TJ) 20 W - - DPAK - NPN 1V @ 400mA, 2A 400 V
FZT795AQTA
FZT795AQTA
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Diodes Incorporated
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 - - - - - - - - 500 mA 300 @ 10mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - PNP 300mV @ 5mA, 200mA 140 V
ZTX690BSTZ
ZTX690BSTZ
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Diodes Incorporated
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 - - - - - - - - 2 A 400 @ 1A, 2V - - - 150MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 500mV @ 5mA, 1A 45 V
ZTX692BSTZ
ZTX692BSTZ
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Diodes Incorporated
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 - - - - - - - - 1 A 400 @ 500mA, 2V - - - 150MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 500mV @ 10mA, 1A 70 V
ZTX696BSTZ
ZTX696BSTZ
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Diodes Incorporated
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 - - - - - - - - 500 mA 150 @ 200mA, 5V - - - 70MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 250mV @ 5mA, 200mA 180 V
AMJD31C-HF
AMJD31C-HF
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Comchip Technology
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - 3MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.25 W - - TO-252-2 - - 1.2V @ 375mA, 3A 100 V
FZT560QTA
FZT560QTA
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Diodes Incorporated
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 - - - - - - - - 150 mA 100 @ 1mA, 10V - - - 60MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223 - PNP 500mV @ 10mA, 50mA 500 V
NSV40300CTWG
NSV40300CTWG
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On Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 1V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 800 mW - - LFPAK4 (5x6) - PNP 400mV @ 300mA, 3A 40 V
MJE520 PBFREE
MJE520 PBFREE
Central Semiconductor Corp
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 - - - - - - - - - - - - - - - - - - - - - - - - - -
2SB1412TLP
2SB1412TLP
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ROHM Semiconductor
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 - - - - - - - - 5 A 82 @ 500mA, 2V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - CPT3 - PNP 1V @ 100mA, 4A 20 V
2N5632
2N5632
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole - 150 W - - TO-204AD (TO-3) - NPN - 100 V
ZTX601QSTZ
ZTX601QSTZ
Diodes Incorporated
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 250MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN - Darlington 1.2V @ 10mA, 1A 160 V
ZTX690BQ
ZTX690BQ
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Diodes Incorporated
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 - - - - - - - - 2 A 500 @ 100mA, 2V - - - 150MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 500mV @ 5mA, 1A 45 V
ZTX749STZ
ZTX749STZ
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Diodes Incorporated
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 - - - - - - - - 2 A 100 @ 1A, 2V - - - 160MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 500mV @ 200mA, 2A 25 V
ZTX1049ASTZ
ZTX1049ASTZ
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Diodes Incorporated
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 - - - - - - - - 4 A 300 @ 1A, 2V - - - 180MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 220mV @ 50mA, 4A 25 V
ZTX1053ASTZ
ZTX1053ASTZ
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Diodes Incorporated
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 - - - - - - - - 3 A 300 @ 1A, 2V - - - 140MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 350mV @ 100mA, 3A 75 V
ZTX1053A
ZTX1053A
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Diodes Incorporated
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 - - - - - - - - 3 A 300 @ 1A, 2V - - - 140MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 250mV @ 100mA, 3A 75 V
ZTX658QSTZ
ZTX658QSTZ
Diodes Incorporated
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 - - - - - - - - 500 mA 50 @ 100mA, 5V - - - 50MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 500mV @ 10mA, 100mA 400 V
TTC014,L1NV
TTC014,L1NV
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Toshiba
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - - - - Surface Mount 150°C (TJ) 1 W - - PW-MOLD - NPN 1V @ 50mA, 500mA 800 V
2SA1244-Y(T6L1,NQ)
2SA1244-Y(T6L1,NQ)
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Toshiba
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 - - - - - - - - 5 A 70 @ 1A, 1V - - - 60MHz - - Surface Mount 150°C (TJ) 1 W - - PW-MOLD - PNP 400mV @ 150mA, 3A 50 V
CBCP69 TR PBFREE
CBCP69 TR PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 85 @ 500mA, 1V - - - 65MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223 - PNP 500mV @ 100mA, 1A 20 V
ZTX653QSTZ
ZTX653QSTZ
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Diodes Incorporated
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 - - - - - - - - 2 A - - - - 175MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 500mV @ 200mA, 2A 100 V
ZTX651QSTZ
ZTX651QSTZ
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Diodes Incorporated
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 - - - - - - - - 2 A 100 @ 500mA, 2V - - - 175MHz - - Through Hole -55°C ~ 200°C (TJ) 1.5 W - - E-Line (TO-92 compatible) - NPN 500mV @ 200mA, 2A 60 V
2N4150S
2N4150S
Microchip Technology
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 - - - - - - - - 10 A 50 @ 1A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - NPN 2.5V @ 1A, 10A 70 V
ZX5T851A
ZX5T851A
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Diodes Incorporated
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 - - - - - - - - 4.5 A 100 @ 2A, 1V - - - 130MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 210mV @ 200mA, 5A 60 V
ZXTN2010ASTZ
ZXTN2010ASTZ
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Diodes Incorporated
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 - - - - - - - - 4.5 A 100 @ 2A, 1V - - - 130MHz - - Through Hole -55°C ~ 150°C (TJ) 710 mW - - E-Line (TO-92 compatible) - NPN 210mV @ 200mA, 5A 60 V
ZTX751QSTZ
ZTX751QSTZ
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Diodes Incorporated
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 - - - - - - - - 2 A 100 @ 500mA, 2V - - - 140MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 500mV @ 200mA, 2A 60 V
Showing 17701-17750 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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