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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MMBTA56-AQ
MMBTA56-AQ
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Diotec Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - SOT-23-3 (TO-236) - PNP 250mV @ 10mA, 100mA 60 V
MMBTA06-AQ
MMBTA06-AQ
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Diotec Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - SOT-23-3 (TO-236) - NPN 250mV @ 10mA, 100mA 80 V
MMBTA44A
MMBTA44A
Diotec Semiconductor
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 - - - - - - - - 500 mA 80 @ 10mA, 10V - - - 50MHz - - Surface Mount - 250 mW - - SOT-23 - NPN 200mV @ 1mA, 10mA 400 V
MMBTA94A
MMBTA94A
Diotec Semiconductor
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 - - - - - - - - 500 mA 45 @ 30mA, 10V - - - 50MHz - - Surface Mount - 350 mW - - SOT-23 - PNP 250mV @ 2mA, 20mA 400 V
2SB927T-AE
2SB927T-AE
On Semiconductor
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2SD467CTZ-E
2SD467CTZ-E
Renesas
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MMBT5401
MMBT5401
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 600 mA 100 @ 10mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 300 mW - - SOT-23 - PNP 500mV @ 5mA, 50mA 160 V
NSV40300MZ4T1G
NSV40300MZ4T1G
Sanyo Denki
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 - - - - - - - - 3 A 175 @ 1A, 1V - - - 160MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223 (TO-261) - PNP 400mV @ 300mA, 3A 40 V
MMBT2907AW_R1_00001
MMBT2907AW_R1_00001
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PANJIT
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-323 - PNP 1.6V @ 50mA, 500mA 60 V
MMBT3906-AU_R1_000A1
MMBT3906-AU_R1_000A1
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PANJIT
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23 - PNP 400mV @ 5mA, 50mA 40 V
BC857B-AU_R1_000A1
BC857B-AU_R1_000A1
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PANJIT
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 200MHz - - Surface Mount -50°C ~ 150°C (TJ) 330 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 45 V
BC846BW-AU_R1_000A1
BC846BW-AU_R1_000A1
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PANJIT
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - SOT-323 - NPN 600mV @ 5mA, 100mA 65 V
BC817-16W_R1_00001
BC817-16W_R1_00001
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PANJIT
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-323 - NPN 700mV @ 50mA, 500mA 45 V
S8050-H
S8050-H
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 500 mA 200 @ 50mA, 1V - - - 150MHz - - Surface Mount 150°C (TJ) 300 mW - - SOT-23 - NPN 600mV @ 50mA, 500mA 25 V
BC807-25-AU_R1_000A1
BC807-25-AU_R1_000A1
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PANJIT
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23 - PNP 700mV @ 50mA, 500mA 45 V
2SB1215T-N-TL-E
2SB1215T-N-TL-E
On Semiconductor
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2SB1215S-H
2SB1215S-H
On Semiconductor
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 - - - - - - - - 3 A 140 @ 500mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 1 W - - TP - PNP 500mV @ 150mA, 1.5A 100 V
2SB1216T-TL-H
2SB1216T-TL-H
On Semiconductor
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 - - - - - - - - 4 A 200 @ 500mA, 5V - - - 130MHz - - Surface Mount 150°C (TJ) 1 W - - TP-FA - PNP 500mV @ 200mA, 2A 100 V
PUMH2/HE115
PUMH2/HE115
NXP Semiconductors
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BC847CE6433HTMA1
BC847CE6433HTMA1
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Infineon Technologies
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 600mV @ 5mA, 100mA 45 V
2SA673B-E
2SA673B-E
Renesas
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2SB1203S-N-TL-E
2SB1203S-N-TL-E
On Semiconductor
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BCX71JE6327HTSA1
BCX71JE6327HTSA1
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Infineon Technologies
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 - - - - - - - - 100 mA 250 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 550mV @ 1.25mA, 50mA 45 V
PBHV8110DH_R1_00001
PBHV8110DH_R1_00001
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PANJIT
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 - - - - - - - - 1 A 140 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.4 W - - SOT-89 - NPN 450mV @ 100mA, 1A 100 V
PBHV9110DH_R1_00001
PBHV9110DH_R1_00001
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PANJIT
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 - - - - - - - - 1 A 140 @ 150mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.4 W - - SOT-89 - PNP 600mV @ 100mA, 1A 100 V
2SC2222H_R1_00001
2SC2222H_R1_00001
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PANJIT
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.1 W - - SOT-89 - NPN 1V @ 50mA, 500mA 40 V
PBHV8110DW_R2_00001
PBHV8110DW_R2_00001
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PANJIT
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 - - - - - - - - 1 A 140 @ 150mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.6 W - - SOT-223 - NPN 450mV @ 100mA, 1A 100 V
BCX6925E6327HTSA1
BCX6925E6327HTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 160 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 3 W - - PG-SOT89 - PNP 500mV @ 100mA, 1A 20 V
2SD1830
2SD1830
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On Semiconductor
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2SD1828
2SD1828
On Semiconductor
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2SB647DTZ
2SB647DTZ
Renesas
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2SA1871-T1-AZ
2SA1871-T1-AZ
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Renesas
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 - - - - - - - - 1 A 30 @ 100mA, 5V - - - 30MHz - - Surface Mount 150°C (TJ) 2 W - - MP-2 - PNP 1V @ 60mA, 300mA 600 V
2SB1261(1)-AZ
2SB1261(1)-AZ
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Renesas
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 - - - - - - - - 3 A 100 @ 600mA, 2V - - - 50MHz - - Surface Mount 150°C (TJ) 2 W - - TO-252 (MP-3Z) - PNP 300mV @ 150mA, 1.5A 60 V
2SB1508R
2SB1508R
On Semiconductor
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2SB886
2SB886
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On Semiconductor
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2SC4942-T1-AZ
2SC4942-T1-AZ
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Renesas
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 - - - - - - - - 1 A 30 @ 100mA, 5V - - - 30MHz - - Surface Mount 150°C (TJ) 2 W - - MP-2 - NPN 1V @ 80mA, 400mA 600 V
2SC4942-AZ
2SC4942-AZ
Renesas
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 - - - - - - - - 1 A 30 @ 100mA, 5V - - - 30MHz - - Surface Mount 150°C (TJ) 2 W - - MP-2 - NPN 1V @ 80mA, 400mA 600 V
2SD1579-T-AZ
2SD1579-T-AZ
Renesas
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 - - - - - - - - 1.5 A 2000 @ 1A, 2V - - - 60MHz - - Through Hole 150°C (TJ) 1 W - - - - NPN - Darlington 1.5V @ 1mA, 1A 80 V
2SC4634LS
2SC4634LS
On Semiconductor
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2SB601-AZ
2SB601-AZ
Renesas
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 - - - - - - - - 5 A 2000 @ 3A, 2V - - - - - - Through Hole 150°C (TJ) 1.5 W - - TO-220AB - PNP - Darlington 1.5V @ 3mA, 3A 100 V
PMD10K100
PMD10K100
Solid State Devices Inc (SSDI)
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 - - - - - - - - 12 A - - - - - - - Through Hole - - - - TO-3 - NPN - Darlington - 100 V
MJ11029G
MJ11029G
On Semiconductor
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PMD13K40
PMD13K40
Solid State Devices Inc (SSDI)
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 - - - - - - - - 8 A 800 @ 4A, 2V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 100 W - - TO-3 - PNP - Darlington - 40 V
PMD16K100
PMD16K100
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A - - - - - - - Through Hole - - - - TO-3 - NPN - Darlington - 100 V
ZXTN4006ZTA
ZXTN4006ZTA
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 150mA, 320mV - - - - - - Surface Mount -55°C ~ 150°C (TJ) 1.5 W - - SOT-89-3 - NPN - 200 V
BCR185SE6327
BCR185SE6327
Infineon Technologies
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BUF420AW
BUF420AW
STMicroelectronics
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 - - - - - - - - 30 A - - - - - - - Through Hole 150°C (TJ) 200 W - - TO-247-3 - NPN 500mV @ 4A, 20A 450 V
Showing 21201-21247 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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