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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MPSA06,412
MPSA06,412
Download Datasheet for MPSA06,412
NXP Semiconductors
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 250mV @ 10mA, 100mA 80 V
2N3904,412
2N3904,412
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 40 V
BC337-25,112
BC337-25,112
Download Datasheet for BC337-25,112
NXP Semiconductors
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
PN2222A,412
PN2222A,412
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 40 V
BF199,112
BF199,112
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 - - - - - - - - 25 mA 38 @ 7mA, 10V - - - 550MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN - 25 V
BF370,112
BF370,112
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 - - - - - - - - 100 mA 40 @ 10mA, 1V - - - 500MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN - 15 V
BUK9K29-100E/CX
BUK9K29-100E/CX
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BF420,112
BF420,112
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 - - - - - - - - 50 mA 50 @ 25mA, 20V - - - 60MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92-3 - NPN 600mV @ 5mA, 30mA 300 V
BF420,116
BF420,116
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 - - - - - - - - 50 mA 50 @ 25mA, 20V - - - 60MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92-3 - NPN 600mV @ 5mA, 30mA 300 V
BF421,112
BF421,112
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 - - - - - - - - 50 mA 50 @ 25mA, 20V - - - 60MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92-3 - PNP 600mV @ 5mA, 30mA 300 V
BF422,116
BF422,116
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 - - - - - - - - 50 mA 50 @ 25mA, 20V - - - 60MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92-3 - NPN 600mV @ 5mA, 30mA 250 V
BF423,112
BF423,112
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 - - - - - - - - 50 mA 50 @ 25mA, 20V - - - 60MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92-3 - PNP 600mV @ 5mA, 30mA 250 V
BF423,116
BF423,116
Download Datasheet for BF423,116
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 - - - - - - - - 50 mA 50 @ 25mA, 20V - - - 60MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92-3 - PNP 600mV @ 5mA, 30mA 250 V
BST15,115
BST15,115
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NXP Semiconductors
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 - - - - - - - - 200 mA 30 @ 50mA, 10V - - - 15MHz - - Surface Mount 150°C (TJ) 1.3 W - - SOT-89-3 - PNP 750mV @ 5mA, 50mA 200 V
BST16,115
BST16,115
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 - - - - - - - - 200 mA 30 @ 50mA, 10V - - - 15MHz - - Surface Mount 150°C (TJ) 1.3 W - - SOT-89-3 - PNP 750mV @ 5mA, 50mA 300 V
BUT11APX,127
BUT11APX,127
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 - - - - - - - - 5 A 14 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 32 W - - TO-220F - NPN 1.5V @ 600mA, 3A 450 V
MPSA06,126
MPSA06,126
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 250mV @ 10mA, 100mA 80 V
BC547B,112
BC547B,112
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 400mV @ 5mA, 100mA 45 V
MPSA06,116
MPSA06,116
Download Datasheet for MPSA06,116
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 250mV @ 10mA, 100mA 80 V
MPSA14,116
MPSA14,116
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA42,412
MPSA42,412
Download Datasheet for MPSA42,412
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 - - - - - - - - 100 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 500mV @ 2mA, 20mA 300 V
MPSA42,126
MPSA42,126
Download Datasheet for MPSA42,126
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 - - - - - - - - 100 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 500mV @ 2mA, 20mA 300 V
MPSA42,116
MPSA42,116
Download Datasheet for MPSA42,116
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 - - - - - - - - 100 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 500mV @ 2mA, 20mA 300 V
MPSA43,116
MPSA43,116
Download Datasheet for MPSA43,116
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 - - - - - - - - 100 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 500mV @ 2mA, 20mA 200 V
MPSA56,116
MPSA56,116
Download Datasheet for MPSA56,116
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 250mV @ 10mA, 100mA 80 V
MPSA64,116
MPSA64,116
Download Datasheet for MPSA64,116
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA92,412
MPSA92,412
Download Datasheet for MPSA92,412
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 - - - - - - - - 100 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 2mA, 20mA 300 V
MPSA92,126
MPSA92,126
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 - - - - - - - - 100 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 2mA, 20mA 300 V
BUK9Y12-40E/GFX
BUK9Y12-40E/GFX
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MPSA92,116
MPSA92,116
Download Datasheet for MPSA92,116
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 - - - - - - - - 100 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 2mA, 20mA 300 V
PBSS4140S,126
PBSS4140S,126
Download Datasheet for PBSS4140S,126
NXP Semiconductors
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 - - - - - - - - 1 A 300 @ 500mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92-3 - NPN 500mV @ 100mA, 1A 40 V
PBSS5140S,126
PBSS5140S,126
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 - - - - - - - - 1 A 300 @ 100mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92-3 - PNP 500mV @ 100mA, 1A 40 V
PH2369,112
PH2369,112
Download Datasheet for PH2369,112
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 - - - - - - - - 200 mA 40 @ 10mA, 1V - - - 500MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 250mV @ 1mA, 10mA 15 V
PH2369,126
PH2369,126
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 - - - - - - - - 200 mA 40 @ 10mA, 1V - - - 500MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 250mV @ 1mA, 10mA 15 V
PH2369,116
PH2369,116
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 - - - - - - - - 200 mA 40 @ 10mA, 1V - - - 500MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 250mV @ 1mA, 10mA 15 V
PMBT5401,235
PMBT5401,235
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 - - - - - - - - 300 mA 60 @ 10mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 250 mW - - SOT-23 (TO-236AB) - PNP 500mV @ 5mA, 50mA 150 V
PMBT5401,215
PMBT5401,215
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 - - - - - - - - 300 mA 60 @ 10mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 250 mW - - SOT-23 (TO-236AB) - PNP 500mV @ 5mA, 50mA 150 V
PMEM1505NG,115
PMEM1505NG,115
Download Datasheet for PMEM1505NG,115
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 - - - - - - - - 500 mA 150 @ 100mA, 2V - - - 420MHz - - Surface Mount 125°C (TJ) 300 mW - - 5-TSSOP - NPN + Diode (Isolated) 250mV @ 50mA, 500mA 15 V
PMEM4020PD,115
PMEM4020PD,115
Download Datasheet for PMEM4020PD,115
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 - - - - - - - - 750 mA 300 @ 100mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 600 mW - - SC-74 - PNP + Diode (Isolated) 530mV @ 200mA, 2A 40 V
BUK9Y25-60E/GFX
BUK9Y25-60E/GFX
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PMEM4030NS,115
PMEM4030NS,115
Download Datasheet for PMEM4030NS,115
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 - - - - - - - - 2 A 200 @ 1A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1 W - - 8-SO - NPN + Diode (Isolated) 370mV @ 300mA, 3A 50 V
PMEM4030PS,115
PMEM4030PS,115
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 - - - - - - - - 2 A 200 @ 1A, 2V - - - 100MHz - - Surface Mount - 1 W - - 8-SO - PNP + Diode (Isolated) 390mV @ 300mA, 3A 50 V
PMST5401,135
PMST5401,135
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 - - - - - - - - 300 mA 60 @ 10mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - SC-70 - PNP 500mV @ 5mA, 50mA 150 V
PMST5401,115
PMST5401,115
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 - - - - - - - - 300 mA 60 @ 10mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - SC-70 - PNP 500mV @ 5mA, 50mA 150 V
PN2222A,126
PN2222A,126
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 40 V
PN2907A,126
PN2907A,126
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 1.6V @ 50mA, 500mA 60 V
PBSS4160K,115
PBSS4160K,115
Download Datasheet for PBSS4160K,115
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 - - - - - - - - 750 mA 200 @ 500mA, 5V - - - 220MHz - - Surface Mount 150°C (TJ) 425 mW - - SMT3; MPAK - NPN 280mV @ 100mA, 1A 60 V
PBSS4350S,126
PBSS4350S,126
Download Datasheet for PBSS4350S,126
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 - - - - - - - - 3 A 100 @ 2A, 2V - - - 100MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92-3 - NPN 290mV @ 200mA, 2A 50 V
PBSS5160K,115
PBSS5160K,115
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 - - - - - - - - 700 mA 150 @ 500mA, 5V - - - 185MHz - - Surface Mount 150°C (TJ) 425 mW - - SMT3; MPAK - PNP 340mV @ 100mA, 1A 60 V
PBSS5350S,126
PBSS5350S,126
Download Datasheet for PBSS5350S,126
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 - - - - - - - - 3 A 100 @ 2A, 2V - - - 100MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92-3 - PNP 300mV @ 200mA, 2A 50 V
Showing 20951-21000 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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