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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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49 manufacturers
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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC817-40WT1G
BC817-40WT1G
Download Datasheet for BC817-40WT1G
On Semiconductor
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 500 mA 250 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 460 mW SC-70-3 (SOT323) NPN 700mV @ 50mA, 500mA 45 V
BC860C,235
BC860C,235
Download Datasheet for BC860C,235
Nexperia USA Inc.
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 100 mA 420 @ 2mA, 5V 100MHz Surface Mount 150°C (TJ) 250 mW TO-236AB PNP 650mV @ 5mA, 100mA 45 V
BC816-25HVL
BC816-25HVL
Download Datasheet for BC816-25HVL
Nexperia USA Inc.
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 500 mA 160 @ 100mA, 1V 100MHz Surface Mount 175°C (TJ) 300 mW TO-236AB NPN 400mV @ 50mA, 500mA 80 V
MMBT3904 RFG
MMBT3904 RFG
Taiwan Semiconductor
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 200 mA 100 @ 10mA, 1V 250MHz Surface Mount -55°C ~ 150°C (TJ) 300 mW SOT-23 NPN 300mV @ 5mA, 50mA 40 V
SST2907AHZGT116
SST2907AHZGT116
ROHM Semiconductor
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 600 mA 100 @ 150mA, 10V 200MHz Surface Mount 150°C (TJ) 200 mW SST3 PNP 1.6V @ 50mA, 500mA 60 V
SST2222AHZGT116
SST2222AHZGT116
ROHM Semiconductor
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 600 mA 100 @ 150mA, 10V 300MHz Surface Mount 150°C (TJ) 200 mW SST3 NPN 1V @ 50mA, 500mA 40 V
BC817-16-7-F
BC817-16-7-F
Download Datasheet for BC817-16-7-F
Diodes Incorporated
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 500 mA 100 @ 100mA, 1V 100MHz Surface Mount -65°C ~ 150°C (TJ) 310 mW SOT-23-3 NPN 700mV @ 50mA, 500mA 45 V
MMBT2907A
MMBT2907A
NTE Electronics
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 600 mA 100 @ 150mA, 10V 200MHz Surface Mount 150°C (TJ) 350 mW SOT-23-3 PNP 1.6V @ 50mA, 500mA 60 V
BC859C,235
BC859C,235
Download Datasheet for BC859C,235
Nexperia USA Inc.
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 100 mA 420 @ 2mA, 5V 100MHz Surface Mount 150°C (TJ) 250 mW TO-236AB PNP 650mV @ 5mA, 100mA 30 V
2PC4081R,115
2PC4081R,115
Nexperia USA Inc.
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 150 mA 180 @ 1mA, 6V 100MHz Surface Mount 150°C (TJ) 200 mW SOT-323 NPN 400mV @ 5mA, 50mA 50 V
2PC4081R,135
2PC4081R,135
Nexperia USA Inc.
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 150 mA 180 @ 1mA, 6V 100MHz Surface Mount 150°C (TJ) 200 mW SOT-323 NPN 400mV @ 5mA, 50mA 50 V
BC846B RFG
BC846B RFG
Taiwan Semiconductor
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 100 mA 200 @ 2mA, 5V 100MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-23 NPN 500mV @ 5mA, 100mA 65 V
BC847B RFG
BC847B RFG
Taiwan Semiconductor
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 100 mA 200 @ 2mA, 5V 100MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-23 NPN 500mV @ 5mA, 100mA 45 V
MMBTA14-7-F
MMBTA14-7-F
Download Datasheet for MMBTA14-7-F
Diodes Incorporated
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 300 mA 20000 @ 100mA, 5V 125MHz Surface Mount -55°C ~ 150°C (TJ) 300 mW SOT-23-3 NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MMBTA64-7-F
MMBTA64-7-F
Download Datasheet for MMBTA64-7-F
Diodes Incorporated
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 500 mA 20000 @ 100mA, 5V 125MHz Surface Mount -55°C ~ 150°C (TJ) 300 mW SOT-23-3 PNP - Darlington 1.5V @ 100µA, 100mA 30 V
BC857BT-7-F
BC857BT-7-F
Download Datasheet for BC857BT-7-F
Diodes Incorporated
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 100 mA 220 @ 2mA, 5V 100MHz Surface Mount -55°C ~ 150°C (TJ) 150 mW SOT-523 PNP 650mV @ 5mA, 100mA 45 V
PMBTA56,235
PMBTA56,235
Download Datasheet for PMBTA56,235
Nexperia USA Inc.
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 500 mA 100 @ 100mA, 1V 50MHz Surface Mount 150°C (TJ) 250 mW TO-236AB PNP 250mV @ 10mA, 100mA 80 V
2SC4117-BL,LF
2SC4117-BL,LF
Download Datasheet for 2SC4117-BL,LF
Toshiba
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 100 mA 200 @ 2mA, 6V 100MHz Surface Mount 125°C (TJ) 100 mW SC-70 NPN 300mV @ 1mA, 10mA 120 V
2SC4081U3T106R
2SC4081U3T106R
ROHM Semiconductor
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 150 mA 120 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 200 mW UMT3 NPN 400mV @ 5mA, 50mA 50 V
MMBTA56-AU_R1_000A1
MMBTA56-AU_R1_000A1
Download Datasheet for MMBTA56-AU_R1_000A1
PANJIT
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 500 mA 100 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23 PNP 250mV @ 10mA, 100mA 80 V
MMBTA42,215
MMBTA42,215
Download Datasheet for MMBTA42,215
Nexperia USA Inc.
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 100 mA 40 @ 30mA, 10V 50MHz Surface Mount 150°C (TJ) 250 mW TO-236AB NPN 500mV @ 2mA, 20mA 300 V
MMBT2907A-G
MMBT2907A-G
Download Datasheet for MMBT2907A-G
Comchip Technology
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 600 mA 100 @ 150mA, 10V 200MHz Surface Mount -55°C ~ 150°C (TJ) 250 mW SOT-23-3 PNP 1.6V @ 50mA, 500mA 60 V
2SB892S
2SB892S
On Semiconductor
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SBC817-40LT1G
SBC817-40LT1G
Download Datasheet for SBC817-40LT1G
On Semiconductor
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 500 mA 250 @ 100mA, 1V 100MHz Surface Mount -65°C ~ 150°C (TJ) 300 mW SOT-23-3 (TO-236) NPN 700mV @ 50mA, 500mA 45 V
MMST5551-TP
MMST5551-TP
Download Datasheet for MMST5551-TP
Micro Commercial Co.
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 200 mA 80 @ 10mA, 5V 300MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-323 NPN 200mV @ 5mA, 50mA 160 V
MMS9013HE3-H-TP
MMS9013HE3-H-TP
Download Datasheet for MMS9013HE3-H-TP
Micro Commercial Co.
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 500 mA 200 @ 500mA, 1V 150MHz Surface Mount -55°C ~ 150°C (TJ) 300 mW SOT-23 - 600mV @ 50mA, 500mA 25 V
BFS20W,115
BFS20W,115
Download Datasheet for BFS20W,115
Nexperia USA Inc.
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 25 mA 40 @ 7mA, 10V 470MHz Surface Mount 150°C (TJ) 200 mW SOT-323 NPN - 20 V
BC807-40HR
BC807-40HR
Download Datasheet for BC807-40HR
Nexperia USA Inc.
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 500 mA 250 @ 100mA, 1V 80MHz Surface Mount -55°C ~ 175°C (TA) 320 mW TO-236AB PNP 700mV @ 50mA, 500mA 45 V
2SA1037AKT146Q
2SA1037AKT146Q
Download Datasheet for 2SA1037AKT146Q
ROHM Semiconductor
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 150 mA 120 @ 1mA, 6V 140MHz Surface Mount 150°C (TJ) 200 mW SMT3 PNP 500mV @ 5mA, 50mA 50 V
BC816-25HR
BC816-25HR
Download Datasheet for BC816-25HR
Nexperia USA Inc.
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 500 mA 160 @ 100mA, 1V 100MHz Surface Mount 175°C (TJ) 300 mW TO-236AB NPN 400mV @ 50mA, 500mA 80 V
BC807-25W-7
BC807-25W-7
Download Datasheet for BC807-25W-7
Diodes Incorporated
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 500 mA 160 @ 100mA, 1V 100MHz Surface Mount -65°C ~ 150°C (TJ) 200 mW SOT-323 PNP 700mV @ 50mA, 500mA 45 V
BCX17,235
BCX17,235
Download Datasheet for BCX17,235
Nexperia USA Inc.
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 500 mA 100 @ 100mA, 1V 80MHz Surface Mount 150°C (TJ) 250 mW TO-236AB PNP 620mV @ 50mA, 500mA 45 V
2SC3325-Y,LF
2SC3325-Y,LF
Download Datasheet for 2SC3325-Y,LF
Toshiba
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 500 mA 120 @ 100mA, 1V 300MHz Surface Mount 150°C (TJ) 200 mW S-Mini NPN 250mV @ 10mA, 100mA 50 V
SMMBTA56LT3G
SMMBTA56LT3G
Download Datasheet for SMMBTA56LT3G
On Semiconductor
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 500 mA 100 @ 100mA, 1V 50MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) PNP 250mV @ 10mA, 100mA 80 V
PMBT5550,235
PMBT5550,235
Download Datasheet for PMBT5550,235
Nexperia USA Inc.
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 300 mA 60 @ 10mA, 5V 300MHz Surface Mount 150°C (TJ) 250 mW TO-236AB NPN 250mV @ 5mA, 50mA 140 V
MMSTA42-7-F
MMSTA42-7-F
Download Datasheet for MMSTA42-7-F
Diodes Incorporated
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 200 mA 40 @ 30mA, 10V 50MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-323 NPN 500mV @ 2mA, 20mA 300 V
BC847BE6327HTSA1
BC847BE6327HTSA1
Download Datasheet for BC847BE6327HTSA1
Infineon Technologies
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 100 mA 200 @ 2mA, 5V 250MHz Surface Mount 150°C (TJ) 330 mW PG-SOT23 NPN 600mV @ 5mA, 100mA 45 V
BC847CE6327HTSA1
BC847CE6327HTSA1
Download Datasheet for BC847CE6327HTSA1
Infineon Technologies
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 100 mA 420 @ 2mA, 5V 100MHz Surface Mount -65°C ~ 150°C (TJ) 200 mW PG-SOT23 NPN 500mV @ 5mA, 100mA 45 V
2SB1218ARL
2SB1218ARL
Download Datasheet for 2SB1218ARL
Panasonic Electronic Components
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 100 mA 210 @ 2mA, 10V 80MHz Surface Mount 150°C (TJ) 150 mW SMini3-G1 PNP 500mV @ 10mA, 100mA 45 V
BF824,235
BF824,235
Download Datasheet for BF824,235
Nexperia USA Inc.
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 25 mA 25 @ 4mA, 10V 450MHz Surface Mount 150°C (TJ) 250 mW TO-236AB PNP - 30 V
2SB1218ASL
2SB1218ASL
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Panasonic Electronic Components
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 100 mA 290 @ 2mA, 10V 80MHz Surface Mount 150°C (TJ) 150 mW SMini3-G1 PNP 500mV @ 10mA, 100mA 45 V
2SB12190RL
2SB12190RL
Download Datasheet for 2SB12190RL
Panasonic Electronic Components
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 500 mA 120 @ 150mA, 10V 200MHz Surface Mount 150°C (TJ) 150 mW SMini3-G1 PNP 600mV @ 30mA, 300mA 25 V
2SB13980PA
2SB13980PA
Download Datasheet for 2SB13980PA
Panasonic Electronic Components
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 5 A 90 @ 2A, 2V 120MHz Through Hole 150°C (TJ) 1 W MT-2-A1 PNP 1V @ 100mA, 3A 25 V
2SB13980QA
2SB13980QA
Download Datasheet for 2SB13980QA
Panasonic Electronic Components
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 5 A 120 @ 2A, 2V 120MHz Through Hole 150°C (TJ) 1 W MT-2-A1 PNP 1V @ 100mA, 3A 25 V
2SA1309AQA
2SA1309AQA
Download Datasheet for 2SA1309AQA
Panasonic Electronic Components
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 100 mA 160 @ 2mA, 10V 80MHz Through Hole 150°C (TJ) 300 mW NS-B1 PNP 300mV @ 5mA, 50mA 50 V
2SA1309ARA
2SA1309ARA
Download Datasheet for 2SA1309ARA
Panasonic Electronic Components
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 100 mA 210 @ 2mA, 10V 80MHz Through Hole 150°C (TJ) 300 mW NS-B1 PNP 300mV @ 5mA, 50mA 50 V
2SA1309ASA
2SA1309ASA
Download Datasheet for 2SA1309ASA
Panasonic Electronic Components
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 100 mA 290 @ 2mA, 10V 80MHz Through Hole 150°C (TJ) 300 mW NS-B1 PNP 300mV @ 5mA, 50mA 50 V
2SB1030ARA
2SB1030ARA
Download Datasheet for 2SB1030ARA
Panasonic Electronic Components
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 500 mA 120 @ 150mA, 10V 120MHz Through Hole 150°C (TJ) 300 mW NS-B1 PNP 600mV @ 30mA, 300mA 50 V
MPSA06_D74Z
MPSA06_D74Z
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On Semiconductor
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 500 mA 100 @ 100mA, 1V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 10mA, 100mA 80 V
MPSA06_D75Z
MPSA06_D75Z
Download Datasheet for MPSA06_D75Z
On Semiconductor
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 500 mA 100 @ 100mA, 1V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 10mA, 100mA 80 V
Showing 20801-20850 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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