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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MMBTA14-7
MMBTA14-7
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Diodes Incorporated
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 - - - - - - - - 300 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MMBTA06-7
MMBTA06-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - NPN 250mV @ 10mA, 100mA 80 V
2N6727
2N6727
On Semiconductor
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 - - - - - - - - 2 A 50 @ 1A, 1V - - - 500MHz - - Through Hole - 1 W - - TO-237 - PNP 500mV @ 100mA, 1A 40 V
2N3440
2N3440
On Semiconductor
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 - - - - - - - - 1 A - - - - - - - Through Hole - - - - TO-39 - NPN - 250 V
2N3724
2N3724
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On Semiconductor
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - - - - Through Hole - 800 mW - - TO-5 - NPN 750mV @ 100mA, 1A 30 V
2N3962
2N3962
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On Semiconductor
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 - - - - - - - - 200 mA 100 @ 1mA, 5V - - - - - - Through Hole - 360 mW - - TO-18 - PNP 400mV @ 5mA, 50mA 60 V
2N4123BU
2N4123BU
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On Semiconductor
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 - - - - - - - - 200 mA 50 @ 2mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 5mA, 50mA 30 V
2N4209
2N4209
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On Semiconductor
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 - - - - - - - - 50 mA 50 @ 10mA, 300mV - - - - - - Through Hole - 300 mW - - TO-18 - PNP 150mV @ 100µA, 1mA 15 V
2N3640
2N3640
Central Semiconductor Corp
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 - - - - - - - - 10nA (ICBO) 30 @ 10mA, 300mV - - - 500MHz - - Through Hole - - - - TO-106 - PNP - 12 V
2N4237
2N4237
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On Semiconductor
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 - - - - - - - - 1 A 30 @ 250mA, 1V - - - - - - Through Hole - 800 mW - - TO-39 - NPN 600mV @ 100mA, 1A 40 V
2N4400BU
2N4400BU
On Semiconductor
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 - - - - - - - - 600 mA 50 @ 150mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 750mV @ 50mA, 500mA 40 V
2N4402BU
2N4402BU
On Semiconductor
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 - - - - - - - - 600 mA 50 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 750mV @ 50mA, 500mA 40 V
2N5089BU
2N5089BU
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On Semiconductor
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 - - - - - - - - 100 mA 400 @ 100µA, 5V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 1mA, 10mA 25 V
2N5224
2N5224
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On Semiconductor
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 - - - - - - - - 100 mA 40 @ 10mA, 1V - - - - - - Through Hole - 625 mW - - TO-92-3 - NPN 350mV @ 3mA, 10mA 12 V
2N5226
2N5226
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On Semiconductor
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 - - - - - - - - 500 mA 30 @ 50mA, 10V - - - 50MHz - - Through Hole - 625 mW - - TO-92-3 - PNP 800mV @ 10mA, 100mA 25 V
2N5322
2N5322
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On Semiconductor
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 - - - - - - - - 2 A 30 @ 500mA, 4V - - - - - - Through Hole - 10 W - - TO-39 - PNP 700mV @ 50mA, 50mA 75 V
2N5323
2N5323
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On Semiconductor
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 - - - - - - - - 2 A 40 @ 500mA, 4V - - - - - - Through Hole - 10 W - - TO-5 - PNP 1.2V @ 50mA, 500mA 50 V
2N5401BU
2N5401BU
On Semiconductor
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
2N5415
2N5415
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On Semiconductor
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 - - - - - - - - 100 mA 30 @ 50mA, 10V - - - - - - Through Hole - 1 W - - TO-39 - PNP 2.5V @ 5mA, 50mA 200 V
2SC3071-AE
2SC3071-AE
On Semiconductor
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2N5680
2N5680
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On Semiconductor
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 - - - - - - - - 1 A 40 @ 250mA, 2V - - - - - - Through Hole - 1 W - - TO-39 - PNP 1V @ 50mA, 500mA 120 V
2N5682
2N5682
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On Semiconductor
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 - - - - - - - - 1 A 40 @ 250mA, 2V - - - - - - Through Hole - 1 W - - TO-39 - NPN 1V @ 50mA, 500mA 120 V
2N5961
2N5961
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On Semiconductor
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 - - - - - - - - 100 mA 150 @ 10mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 500µA, 10mA 60 V
BC52-16PASX
BC52-16PASX
NXP Semiconductors
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 145MHz - - Surface Mount 150°C (TJ) 420 mW - - DFN2020D-3 - PNP 500mV @ 50mA, 500mA 60 V
2N2221A
2N2221A
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On Semiconductor
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole - 500 mW - - TO-18 - NPN 1V @ 50mA, 500mA 40 V
BC51-10PASX
BC51-10PASX
NXP Semiconductors
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 145MHz - - Surface Mount 150°C (TJ) 420 mW - - DFN2020D-3 - PNP 500mV @ 50mA, 500mA 45 V
BC51PASX
BC51PASX
NXP Semiconductors
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 145MHz - - Surface Mount 150°C (TJ) 420 mW - - DFN2020D-3 - PNP 500mV @ 50mA, 500mA 45 V
PBSS4130QAZ
PBSS4130QAZ
NXP Semiconductors
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 - - - - - - - - 1 A 180 @ 1A, 2V - - - 190MHz - - Surface Mount 150°C (TJ) 325 mW - - DFN1010D-3 - NPN 245mV @ 50mA, 1A 30 V
BC52-10PASX
BC52-10PASX
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NXP Semiconductors
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 145MHz - - Surface Mount 150°C (TJ) 420 mW - - DFN2020D-3 - PNP 500mV @ 50mA, 500mA 60 V
BC807-40E6359
BC807-40E6359
Infineon Technologies
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 700mV @ 50mA, 500mA 45 V
2PB709ASL/PA215
2PB709ASL/PA215
NXP Semiconductors
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DTB113E
DTB113E
On Semiconductor
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DTA114Y
DTA114Y
On Semiconductor
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DTC143T
DTC143T
On Semiconductor
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DTA143E
DTA143E
On Semiconductor
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DTC114T
DTC114T
On Semiconductor
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DTD113E
DTD113E
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DTC143Z
DTC143Z
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DTC114TXV3T1
DTC114TXV3T1
On Semiconductor
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BC817-16W
BC817-16W
Infineon Technologies
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BC808-40WE6327
BC808-40WE6327
Infineon Technologies
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 250 mW - - PG-SOT23-3-11 - PNP 700mV @ 50mA, 500mA 25 V
BC817-25/6215
BC817-25/6215
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NXP Semiconductors
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DTC143E
DTC143E
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BC817-40E6433
BC817-40E6433
Infineon Technologies
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 500 mW - - PG-SOT23 - NPN 700mV @ 50mA, 500mA 45 V
BC808-40W
BC808-40W
Infineon Technologies
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 250 mW - - PG-SOT23-3-11 - PNP 700mV @ 50mA, 500mA 25 V
BC817-16/6215
BC817-16/6215
NXP Semiconductors
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2SA1348-AC
2SA1348-AC
On Semiconductor
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BC817-40W/ZL115
BC817-40W/ZL115
Download Datasheet for BC817-40W/ZL115
Nexperia USA Inc.
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BC817-40W/ZL135
BC817-40W/ZL135
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Nexperia USA Inc.
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BC818-40WE6327
BC818-40WE6327
Infineon Technologies
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 500 mW - - PG-SOT323-3-1 - - 700mV @ 50mA, 500mA 25 V
Showing 20751-20800 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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