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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSB906YTU
KSB906YTU
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On Semiconductor
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 3 A 100 @ 500mA, 5V 9MHz Through Hole 150°C (TJ) 1 W I-PAK PNP 1.7V @ 300mA, 3A 60 V
KSB1015Y
KSB1015Y
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On Semiconductor
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 3 A 100 @ 500mA, 5V 9MHz Through Hole 150°C (TJ) 25 W TO-220F-3 PNP 1V @ 300mA, 3A 60 V
KSD1406OTU
KSD1406OTU
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On Semiconductor
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 3 A 60 @ 500mA, 5V 3MHz Through Hole 150°C (TJ) 25 W TO-220F-3 NPN 1V @ 300mA, 3A 60 V
KSD1406YTU
KSD1406YTU
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 3 A 100 @ 500mA, 5V 3MHz Through Hole 150°C (TJ) 25 W TO-220F-3 NPN 1V @ 300mA, 3A 60 V
KSD1408GTU
KSD1408GTU
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 4 A 40 @ 500mA, 5V 8MHz Through Hole 150°C (TJ) 25 W TO-220F-3 NPN 1.5V @ 300mA, 3A 80 V
KSD1406GTU
KSD1406GTU
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 3 A 150 @ 500mA, 5V 3MHz Through Hole 150°C (TJ) 25 W TO-220F-3 NPN 1V @ 300mA, 3A 60 V
KSC3074YTU
KSC3074YTU
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 5 A 120 @ 1A, 1V 120MHz Through Hole 150°C (TJ) 1 W I-PAK NPN 500mV @ 150mA, 3A 50 V
KSC3074OTU
KSC3074OTU
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 5 A 70 @ 1A, 1V 120MHz Through Hole 150°C (TJ) 1 W I-PAK NPN 500mV @ 150mA, 3A 50 V
KSA614OTU
KSA614OTU
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 3 A 70 @ 500mA, 5V - Through Hole 150°C (TJ) 25 W TO-220-3 PNP 500mV @ 100mA, 1A 55 V
KSA614RTU
KSA614RTU
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 3 A 40 @ 500mA, 5V - Through Hole 150°C (TJ) 25 W TO-220-3 PNP 500mV @ 100mA, 1A 55 V
BC856BW/ZLX
BC856BW/ZLX
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Nexperia USA Inc.
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 - - - Surface Mount - - SOT-323 - - -
KSD1362RTU
KSD1362RTU
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 5 A 40 @ 5A, 5V 10MHz Through Hole 150°C (TJ) 20 W TO-220F-3 NPN 1V @ 500mA, 5A 70 V
FJP3305
FJP3305
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 4 A 19 @ 1A, 5V 4MHz Through Hole 150°C (TJ) 75 W TO-220-3 NPN 1V @ 1A, 4A 400 V
FJP3305H1
FJP3305H1
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 4 A 19 @ 1A, 5V 4MHz Through Hole 150°C (TJ) 75 W TO-220-3 NPN 1V @ 1A, 4A 400 V
KSA1244OTU
KSA1244OTU
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 5 A 70 @ 1A, 1V 60MHz Through Hole 150°C (TJ) 1 W I-PAK PNP 500mV @ 150mA, 3A 50 V
KSA1244YTU
KSA1244YTU
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 5 A 120 @ 1A, 1V 60MHz Through Hole 150°C (TJ) 1 W I-PAK PNP 500mV @ 150mA, 3A 50 V
KSD401FYTU
KSD401FYTU
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 2 A 120 @ 400mA, 10V 5MHz Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 50mA, 500mA 150 V
KSD401YTU
KSD401YTU
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 2 A 120 @ 400mA, 10V 5MHz Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 50mA, 500mA 150 V
KSD401Y
KSD401Y
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 2 A 120 @ 400mA, 10V 5MHz Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 50mA, 500mA 150 V
KSD401O
KSD401O
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 2 A 120 @ 400mA, 10V 5MHz Through Hole 150°C (TJ) 25 W TO-220-3 NPN 1V @ 50mA, 500mA 150 V
KSA1614YTU
KSA1614YTU
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 3 A 120 @ 500mA, 5V - Through Hole 150°C (TJ) 20 W TO-220F-3 PNP 500mV @ 100mA, 1A 55 V
KSD560Y
KSD560Y
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 5 A 5000 @ 3A, 2V - Through Hole 150°C (TJ) 1.5 W TO-220-3 NPN - Darlington 1.5V @ 3mA, 3A 100 V
KSD560R
KSD560R
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 5 A 2000 @ 3A, 2V - Through Hole 150°C (TJ) 1.5 W TO-220-3 NPN - Darlington 1.5V @ 3mA, 3A 100 V
BDW84B
BDW84B
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Central Semiconductor Corp
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 15 A 750 @ 6A, 3V - Through Hole - 130 W TO-218 PNP - 80 V
BCP53-10T1
BCP53-10T1
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On Semiconductor
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 1.5 A 63 @ 150mA, 2V 50MHz Surface Mount -65°C ~ 150°C (TJ) 1.5 W SOT-223 (TO-261) PNP 500mV @ 50mA, 500mA 80 V
BCW30LT1
BCW30LT1
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 - - - - - - - - - -
BCW32LT1
BCW32LT1
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On Semiconductor
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 - - - - - - - - - -
BCW65ALT1
BCW65ALT1
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 800 mA 100 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) NPN 700mV @ 50mA, 500mA 32 V
BCW65CLT1
BCW65CLT1
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 800 mA 250 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) NPN 700mV @ 50mA, 500mA 32 V
BCW66GLT1
BCW66GLT1
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 800 mA 160 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 300 mW SOT-23-3 (TO-236) NPN 700mV @ 50mA, 500mA 45 V
BCW68GLT1
BCW68GLT1
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 - - - - - - - - - -
BCW70LT1
BCW70LT1
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 100 mA 215 @ 2mA, 5V - Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) PNP 300mV @ 500µA, 10mA 45 V
BCW72LT1
BCW72LT1
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 100 mA 200 @ 2mA, 5V 300MHz Surface Mount -55°C ~ 150°C (TJ) 300 mW SOT-23-3 (TO-236) NPN 250mV @ 500µA, 10mA 45 V
BCX17LT3G
BCX17LT3G
On Semiconductor
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 500 mA 100 @ 100mA, 1V - Surface Mount -55°C ~ 150°C (TJ) 300 mW SOT-23-3 (TO-236) PNP 620mV @ 50mA, 500mA 45 V
BCX18LT1G
BCX18LT1G
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 500 mA 100 @ 100mA, 1V - Surface Mount -55°C ~ 150°C (TJ) 300 mW SOT-23-3 (TO-236) PNP 620mV @ 50mA, 500mA 25 V
2SC5964-S-TD-H
2SC5964-S-TD-H
On Semiconductor
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 3 A 200 @ 100mA, 2V 380MHz Surface Mount - 1.3 W PCP NPN 290mV @ 100mA, 2A 50 V
BD437T
BD437T
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 4 A 85 @ 500mA, 1V 3MHz Through Hole -55°C ~ 150°C (TJ) 36 W TO-126 NPN 800mV @ 300mA, 3A 45 V
BD438G
BD438G
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 4 A 85 @ 500mA, 1V 3MHz Through Hole -55°C ~ 150°C (TJ) 36 W TO-126 PNP 700mV @ 300mA, 3A 45 V
BD440
BD440
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 4 A 40 @ 500mA, 1V 3MHz Through Hole -55°C ~ 150°C (TJ) 36 W TO-126 PNP 800mV @ 300mA, 3A 60 V
BD440G
BD440G
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 4 A 40 @ 500mA, 1V 3MHz Through Hole -55°C ~ 150°C (TJ) 36 W TO-126 PNP 800mV @ 300mA, 3A 60 V
2N4953_D26Z
2N4953_D26Z
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 1 A 200 @ 150mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 15mA, 150mA 30 V
MMBT3906M-TP
MMBT3906M-TP
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Micro Commercial Co.
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 200 mA 100 @ 10mA, 1V 250MHz Surface Mount -55°C ~ 150°C (TJ) 100 mW SOT-883 PNP 400mV @ 5mA, 50mA 40 V
MPSA55-AP
MPSA55-AP
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Micro Commercial Co.
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 500 mA 100 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 PNP 250mV @ 10mA, 100mA 80 V
JANTXV2N2484UA/TR
JANTXV2N2484UA/TR
Microchip Technology
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 50 mA 225 @ 10mA, 5V - Surface Mount -65°C ~ 200°C (TJ) 360 mW UA NPN 300mV @ 100µA, 1mA 60 V
M8050-C-BP
M8050-C-BP
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Micro Commercial Co.
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 800 mA 120 @ 100mA, 1V 150MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 NPN 500mV @ 80mA, 800mA 25 V
JANTXV2N3439P
JANTXV2N3439P
Microchip Technology
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 1 A 40 @ 20mA, 10V - Through Hole -55°C ~ 200°C 800 mW TO-39 (TO-205AD) NPN 500mV @ 4mA, 50mA 350 V
2SA1585S-Q-BP
2SA1585S-Q-BP
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Micro Commercial Co.
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 2 A 120 @ 100mA, 2V 200MHz Through Hole -55°C ~ 150°C (TJ) 400 mW TO-92S PNP 820mV @ 100mA, 2A 20 V
2N3879
2N3879
Microchip Technology
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 7 A 40 @ 500mA, 5V - Through Hole -65°C ~ 200°C (TJ) 35 W TO-66 (TO-213AA) NPN 1.2V @ 400mA, 4A 75 V
SS8550-D-AP
SS8550-D-AP
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Micro Commercial Co.
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 1.5 A 160 @ 100mA, 1V 190MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 PNP 800mV @ 80mA, 800mA 25 V
2N2945A
2N2945A
Microchip Technology
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 100 mA 70 @ 1mA, 500mV - Through Hole -65°C ~ 200°C (TJ) 400 mW TO-46 PNP - 20 V
Showing 20751-20800 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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