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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSC1009GTA
KSC1009GTA
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 - - - - - - - - 700 mA 200 @ 50mA, 2V - - - 50MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - NPN 700mV @ 20mA, 200mA 140 V
TIP135
TIP135
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Central Semiconductor Corp
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 - - - - - - - - 8 A - - - - - - - Through Hole - 70 W - - TO-220-3 - PNP - Darlington - 60 V
KSC1187OBU
KSC1187OBU
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 - - - - - - - - 30 mA 70 @ 2mA, 10V - - - 700MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - NPN - 20 V
KST5088MTF
KST5088MTF
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 - - - - - - - - 50 mA 300 @ 100µA, 5V - - - 50MHz - - Surface Mount - 350 mW - - SOT-23-3 - NPN 500mV @ 1mA, 10mA 30 V
KSP8599TA
KSP8599TA
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 - - - - - - - - 500 mA 100 @ 1mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 5mA, 100mA 80 V
KSP8598TA
KSP8598TA
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 - - - - - - - - 500 mA 100 @ 1mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 5mA, 100mA 60 V
KSP8099TA
KSP8099TA
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 - - - - - - - - 500 mA 100 @ 1mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 10mA, 100mA 80 V
KSP8099BU
KSP8099BU
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 - - - - - - - - 500 mA 100 @ 1mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 10mA, 100mA 80 V
KSC1675COBU
KSC1675COBU
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 - - - - - - - - 50 mA 70 @ 1mA, 6V - - - 300MHz - - Through Hole - 250 mW - - TO-92-3 - NPN 300mV @ 1mA, 10mA 30 V
KSC1675CYTA
KSC1675CYTA
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 - - - - - - - - 50 mA 120 @ 1mA, 6V - - - 300MHz - - Through Hole - 250 mW - - TO-92-3 - NPN 300mV @ 1mA, 10mA 30 V
KSC1675OTA
KSC1675OTA
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 - - - - - - - - 50 mA 70 @ 1mA, 6V - - - 300MHz - - Through Hole - 250 mW - - TO-92-3 - NPN 300mV @ 1mA, 10mA 30 V
KSC1675YBU
KSC1675YBU
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 - - - - - - - - 50 mA 120 @ 1mA, 6V - - - 300MHz - - Through Hole - 250 mW - - TO-92-3 - NPN 300mV @ 1mA, 10mA 30 V
KSA539YTA
KSA539YTA
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 - - - - - - - - 200 mA 120 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - PNP 500mV @ 15mA, 150mA 45 V
KSC815CYTA
KSC815CYTA
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 - - - - - - - - 200 mA 120 @ 50mA, 1V - - - 200MHz - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - NPN 400mV @ 15mA, 150mA 45 V
KSC815COBU
KSC815COBU
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 - - - - - - - - 200 mA 70 @ 50mA, 1V - - - 200MHz - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - NPN 400mV @ 15mA, 150mA 45 V
KSD227YTA
KSD227YTA
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 - - - - - - - - 300 mA 120 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - NPN 400mV @ 30mA, 300mA 25 V
PN2222ATAR
PN2222ATAR
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 40 V
PN2222TAR
PN2222TAR
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 30 V
KSA642OBU
KSA642OBU
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 - - - - - - - - 300 mA 70 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - PNP 600mV @ 30mA, 300mA 25 V
KSA539CYBU
KSA539CYBU
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 - - - - - - - - 200 mA 120 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - PNP 500mV @ 15mA, 150mA 45 V
KSA642CYTA
KSA642CYTA
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 - - - - - - - - 300 mA 120 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - PNP 600mV @ 30mA, 300mA 25 V
KSA642CGBU
KSA642CGBU
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 - - - - - - - - 300 mA 200 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - PNP 600mV @ 30mA, 300mA 25 V
TIS97
TIS97
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On Semiconductor
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 - - - - - - - - 500 mA 250 @ 100µA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - 40 V
KSC838OBU
KSC838OBU
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 - - - - - - - - 30 mA 70 @ 2mA, 12V - - - 250MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - NPN 400mV @ 1mA, 10mA 30 V
KST5086MTF
KST5086MTF
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 - - - - - - - - 50 mA 150 @ 100µA, 5V - - - 40MHz - - Surface Mount - 350 mW - - SOT-23-3 - PNP 300mV @ 1mA, 10mA 50 V
KST4124MTF
KST4124MTF
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On Semiconductor
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 - - - - - - - - 200 mA 120 @ 2mA, 1V - - - 300MHz - - Surface Mount - 350 mW - - SOT-23-3 - NPN 300mV @ 5mA, 50mA 25 V
KST4123MTF
KST4123MTF
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 - - - - - - - - 200 mA 50 @ 2mA, 1V - - - 250MHz - - Surface Mount - 350 mW - - SOT-23-3 - NPN 300mV @ 5mA, 50mA 30 V
KST4125MTF
KST4125MTF
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 - - - - - - - - 200 mA 50 @ 2mA, 1V - - - 200MHz - - Surface Mount - 350 mW - - SOT-23-3 - PNP 400mV @ 5mA, 50mA 30 V
KSC838OTA
KSC838OTA
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 - - - - - - - - 30 mA 70 @ 2mA, 12V - - - 250MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - NPN 400mV @ 1mA, 10mA 30 V
KSC2715OMTF
KSC2715OMTF
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 - - - - - - - - 50 mA 70 @ 2mA, 12V - - - 400MHz - - Surface Mount - 150 mW - - SOT-23-3 - NPN 400mV @ 1mA, 10mA 30 V
KSC838CYBU
KSC838CYBU
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 - - - - - - - - 30 mA 120 @ 2mA, 12V - - - 250MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - NPN 400mV @ 1mA, 10mA 30 V
KSP5179TA
KSP5179TA
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On Semiconductor
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 - - - - - - - - 50 mA 25 @ 3mA, 1V - - - 2GHz - - Through Hole 150°C (TJ) 200 mW - - TO-92-3 - NPN 400mV @ 1mA, 10mA 12 V
KSA1175RTA
KSA1175RTA
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 - - - - - - - - 150 mA 40 @ 1mA, 6V - - - 180MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92S - PNP 300mV @ 10mA, 100mA 50 V
KSP24BU
KSP24BU
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 - - - - - - - - 100 mA 30 @ 8mA, 10V - - - 620MHz - - Through Hole 135°C (TJ) 350 mW - - TO-92-3 - NPN - 30 V
PN2907TAR
PN2907TAR
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1.6V @ 50mA, 500mA 40 V
PN2907TF
PN2907TF
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1.6V @ 50mA, 500mA 40 V
PN2907TA
PN2907TA
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1.6V @ 50mA, 500mA 40 V
KSA539OTA
KSA539OTA
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 - - - - - - - - 200 mA 70 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - PNP 500mV @ 15mA, 150mA 45 V
PN2907ANLBU
PN2907ANLBU
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1.6V @ 50mA, 500mA 60 V
KSP27BU
KSP27BU
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.5V @ 100µA, 100mA 60 V
KSC2859YMTF
KSC2859YMTF
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 - - - - - - - - 500 mA 120 @ 100mA, 1V - - - 300MHz - - Surface Mount 150°C (TJ) 150 mW - - SOT-23-3 - NPN 250mV @ 10mA, 100mA 30 V
KSC3488GBU
KSC3488GBU
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 - - - - - - - - 300 mA 200 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 300 mW - - TO-92S - NPN 400mV @ 30mA, 300mA 25 V
KSP14BU
KSP14BU
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
FJV1845UMTF
FJV1845UMTF
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 - - - - - - - - 50 mA 600 @ 1mA, 6V - - - 110MHz - - Surface Mount 150°C (TJ) 300 mW - - SOT-23-3 - NPN 300mV @ 1mA, 10mA 120 V
KSC2001YTA
KSC2001YTA
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 - - - - - - - - 700 mA 135 @ 100mA, 1V - - - 170MHz - - Through Hole 150°C (TJ) 600 mW - - TO-92-3 - NPN 600mV @ 70mA, 700mA 25 V
KSA1182OMTF
KSA1182OMTF
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 - - - - - - - - 500 mA 70 @ 100mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 150 mW - - SOT-23-3 - PNP 250mV @ 10mA, 100mA 30 V
KSC1009CYBU
KSC1009CYBU
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 - - - - - - - - 700 mA 120 @ 50mA, 2V - - - 50MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - NPN 700mV @ 20mA, 200mA 140 V
KSP12TA
KSP12TA
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 - - - - - - - - 100nA 20000 @ 10mA, 5V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1V @ 10µA, 10mA 20 V
KSP12BU
KSP12BU
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 - - - - - - - - 100nA 20000 @ 10mA, 5V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1V @ 10µA, 10mA 20 V
KSA1175OBU
KSA1175OBU
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 - - - - - - - - 150 mA 70 @ 1mA, 6V - - - 180MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92S - PNP 300mV @ 10mA, 100mA 50 V
Showing 20851-20900 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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