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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BCP51-16E6327
BCP51-16E6327
Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 2 W - - SOT-223 - PNP 500mV @ 50mA, 500mA 45 V
BCP5416E6327HTSA1
BCP5416E6327HTSA1
Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4 - - 500mV @ 50mA, 500mA 45 V
BCP55E6327
BCP55E6327
Infineon Technologies
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4-21 - NPN 500mV @ 50mA, 500mA 60 V
BCP53-10E6327
BCP53-10E6327
Infineon Technologies
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4 - - 500mV @ 50mA, 500mA 80 V
BCP54-16E6433
BCP54-16E6433
Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - SOT-223 - NPN 500mV @ 50mA, 500mA 45 V
BCP54E6327
BCP54E6327
Infineon Technologies
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - SOT-223 - NPN 500mV @ 50mA, 500mA 45 V
2SD1835S-AA
2SD1835S-AA
Sanyo Denki
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 - - - - - - - - 2 A 100 @ 100mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 750 mW - - 3-NP - NPN 400mV @ 50mA, 1A 50 V
PBSS5220T-QR
PBSS5220T-QR
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Nexperia USA Inc.
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 - - - - - - - - 2 A 225 @ 500mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 300 mW - - TO-236AB - PNP 225mV @ 200mA, 2A 20 V
BCP54,135
BCP54,135
Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 960 mW - - SOT-223 - NPN 500mV @ 50mA, 500mA 45 V
BCP53F
BCP53F
Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 145MHz - - Surface Mount 150°C (TJ) - - - SOT-223 - PNP 500mV @ 50mA, 500mA 80 V
BC68-25PA,115
BC68-25PA,115
Download Datasheet for BC68-25PA,115
Nexperia USA Inc.
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 - - - - - - - - 2 A 160 @ 500mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 420 mW - - 3-HUSON (2x2) - NPN 600mV @ 200mA, 2A 20 V
PBHV9040TVL
PBHV9040TVL
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Nexperia USA Inc.
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 - - - - - - - - 250 mA 100 @ 50mA, 10V - - - 55MHz - - Surface Mount 150°C (TJ) 300 mW - - TO-236AB - PNP 200mV @ 20mA, 100mA 400 V
PBHV9115TVL
PBHV9115TVL
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Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 100mA, 10V - - - 115MHz - - Surface Mount 150°C (TJ) 300 mW - - TO-236AB - PNP 300mV @ 100mA, 500mA 150 V
BCX17T116
BCX17T116
ROHM Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 425 mW - - SST3 - PNP 620mV @ 50mA, 500mA 45 V
BCP49
BCP49
Infineon Technologies
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - NPN - Darlington 1V @ 100µA, 100mA 60 V
PHPT61002NYC115
PHPT61002NYC115
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NXP Semiconductors
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TH00483
TH00483
On Semiconductor
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PBSS4160PANPS115
PBSS4160PANPS115
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NXP Semiconductors
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CPH6202-TL-E
CPH6202-TL-E
On Semiconductor
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PMP5201Y/DG/B2115
PMP5201Y/DG/B2115
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NXP Semiconductors
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2SC2274KE
2SC2274KE
On Semiconductor
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SPS9590RLRE
SPS9590RLRE
On Semiconductor
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2SB764E-SSH
2SB764E-SSH
Sanyo Denki
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2N6520RL1
2N6520RL1
Motorola Semicondutor
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 - - - - - - - - 500 mA 30 @ 30mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 1.5 W - - TO-92 (TO-226) - PNP 1V @ 5mA, 50mA 350 V
CPH3248-TL-E
CPH3248-TL-E
On Semiconductor
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2SB985T-AE
2SB985T-AE
Sanyo Denki
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TN6717A
TN6717A
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On Semiconductor
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 - - - - - - - - 1.2 A 50 @ 250mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN 350mV @ 10mA, 250mA 80 V
2SA1688-5-TL-E
2SA1688-5-TL-E
Sanyo Denki
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2SA1528
2SA1528
Sanyo Denki
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BCR39PN-E6327
BCR39PN-E6327
Infineon Technologies
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PHPT60603NY,115
PHPT60603NY,115
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Nexperia USA Inc.
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2SA2056(TE85L,F)
2SA2056(TE85L,F)
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Toshiba
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 - - - - - - - - 2 A 200 @ 300mA, 2V - - - - - - Surface Mount 150°C (TJ) 625 mW - - TSM - PNP 200mV @ 33mA, 1A 50 V
BCP68-25,135
BCP68-25,135
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Nexperia USA Inc.
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 - - - - - - - - 2 A 160 @ 500mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 650 mW - - SOT-223 - NPN 600mV @ 200mA, 2A 20 V
2SAR513PFRAT100
2SAR513PFRAT100
ROHM Semiconductor
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 - - - - - - - - 1 A 180 @ 50mA, 2V - - - 400MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 25mA, 500mA 50 V
KSC2883OTF
KSC2883OTF
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On Semiconductor
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 - - - - - - - - 1.5 A 100 @ 500mA, 2V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - SOT-89-3 - NPN 2V @ 30mA, 1.5A 30 V
KSC1008OTA
KSC1008OTA
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On Semiconductor
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 - - - - - - - - 700 mA 70 @ 50mA, 2V - - - 50MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - NPN 400mV @ 50mA, 500mA 60 V
TN3019A
TN3019A
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On Semiconductor
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN 500mV @ 50mA, 500mA 80 V
KSD1621RTF
KSD1621RTF
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On Semiconductor
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 - - - - - - - - 2 A 100 @ 100mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89-3 - NPN 400mV @ 75mA, 1.5A 25 V
ZTX749A
ZTX749A
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On Semiconductor
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 - - - - - - - - 2 A 100 @ 1A, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226 - PNP 500mV @ 200mA, 2A 35 V
SJE3016
SJE3016
On Semiconductor
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PZTA14,115
PZTA14,115
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount 150°C (TJ) 1.25 W - - SOT-223 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
PZTA14,135
PZTA14,135
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount 150°C (TJ) 1.25 W - - SOT-223 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
DCP68-13
DCP68-13
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Diodes Incorporated
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 - - - - - - - - 1 A 85 @ 500mA, 1V - - - 330MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223-3 - NPN 500mV @ 100mA, 1A 20 V
BCP55-6
BCP55-6
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Diotec Semiconductor
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.3 W - - SOT-223 - NPN 500mV @ 50mA, 500mA 60 V
BCP56-10
BCP56-10
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Diotec Semiconductor
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223 - NPN 500mV @ 50mA, 500mA 80 V
BCP55-10
BCP55-10
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Diotec Semiconductor
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.3 W - - SOT-223 - NPN 500mV @ 50mA, 500mA 60 V
BCP55-16
BCP55-16
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Diotec Semiconductor
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.3 W - - SOT-223 - NPN 500mV @ 50mA, 500mA 60 V
2SA1346-SSH-AC
2SA1346-SSH-AC
On Semiconductor
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BFR505215
BFR505215
NXP Semiconductors
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50A02SP
50A02SP
On Semiconductor
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Showing 20651-20700 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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