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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
FCX558QTA
FCX558QTA
Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 50mA, 10V - - - 50MHz - - Surface Mount -65°C ~ 150°C (TJ) 700 mW - - SOT-89-3 - PNP 500mV @ 6mA, 50mA 400 V
2SD2098T100S
2SD2098T100S
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ROHM Semiconductor
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 - - - - - - - - 5 A 270 @ 500mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 1V @ 100mA, 4A 20 V
BD882-R-TP
BD882-R-TP
Micro Commercial
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 - - - - - - - - 3 A 60 @ 1A, 2V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 500 mW - - SOT-89 - NPN 500mV @ 200mA, 2A 30 V
ZX5T3ZTC
ZX5T3ZTC
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Diodes Incorporated
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 - - - - - - - - 5.5 A 200 @ 500mA, 2V - - - 152MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.1 W - - SOT-89-3 - PNP 185mV @ 550mA, 5.5A 40 V
ZX5T2E6TA
ZX5T2E6TA
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Diodes Incorporated
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 - - - - - - - - 3.5 A 300 @ 1A, 2V - - - 110MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.1 W - - SOT-23-6 - PNP 130mV @ 350mA, 3.5A 20 V
2SD2661T100
2SD2661T100
ROHM Semiconductor
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 - - - - - - - - 2 A 270 @ 200mA, 2V - - - 360MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 180mV @ 50mA, 1A 12 V
2SB1698T100
2SB1698T100
ROHM Semiconductor
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 - - - - - - - - 1.5 A 270 @ 100mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - PNP 370mV @ 50mA, 1A 30 V
BCV48H6327XTSA1
BCV48H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 1 W - - PG-SOT89 - PNP - Darlington 1V @ 100µA, 100mA 60 V
BSP50-QX
BSP50-QX
Nexperia USA Inc.
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.25 W - - SOT-223 - NPN - Darlington 1.3V @ 500µA, 500mA 45 V
BSP62-QX
BSP62-QX
Nexperia USA Inc.
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.25 W - - SOT-223 - PNP - Darlington 1.3V @ 500µA, 500mA 80 V
BSP51-QX
BSP51-QX
Nexperia USA Inc.
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.25 W - - SOT-223 - NPN - Darlington 1.3V @ 500µA, 500mA 60 V
2SA1900T100Q
2SA1900T100Q
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ROHM Semiconductor
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 - - - - - - - - 1 A 120 @ 500mA, 3V - - - 150MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - PNP 400mV @ 50mA, 500mA 50 V
2SAR554PT100
2SAR554PT100
ROHM Semiconductor
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 - - - - - - - - 1.5 A 120 @ 100mA, 3V - - - 340MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - PNP 400mV @ 25mA, 500mA 80 V
2SB1260T100P
2SB1260T100P
ROHM Semiconductor
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 - - - - - - - - 1 A 82 @ 100mA, 3V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - PNP 400mV @ 50mA, 500mA 80 V
MJD31CUQ-13
MJD31CUQ-13
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Diodes Incorporated
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - 3MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.6 W - - TO-252, (D-Pak) - NPN 700mV @ 375mA, 3A 100 V
CMUT2222A BK PBFREE
CMUT2222A BK PBFREE
Download Datasheet for CMUT2222A BK PBFREE
Central Semiconductor Corp
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 300MHz - - Surface Mount -65°C ~ 150°C (TJ) 250 mW - - SOT-523 - NPN 1V @ 50mA, 500mA 40 V
2SD1758TLP
2SD1758TLP
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ROHM Semiconductor
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 - - - - - - - - 2 A 82 @ 500mA, 3V - - - 100MHz - - Surface Mount 150°C (TJ) 10 W - - CPT3 - NPN 800mV @ 200mA, 2A 32 V
PZTA42H6327XTSA1
PZTA42H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 70MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - NPN 500mV @ 2mA, 20mA 300 V
2SA2059(TE12L,F)
2SA2059(TE12L,F)
Download Datasheet for 2SA2059(TE12L,F)
Toshiba
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - - - - Surface Mount 150°C (TJ) 1 W - - PW-MINI - PNP 190mV @ 53mA, 1.6A 20 V
BSR30-QX
BSR30-QX
Nexperia USA Inc.
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 - - - - - - - - 1 A 40 @ 100mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 1.35 W - - SOT-89 - PNP 500mV @ 50mA, 500mA 60 V
BSR33-QX
BSR33-QX
Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 1.35 W - - SOT-89 - PNP 500mV @ 50mA, 500mA 80 V
BSR43-QX
BSR43-QX
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Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 1.35 W - - SOT-89 - NPN 500mV @ 50mA, 500mA 80 V
BSR41-QX
BSR41-QX
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Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 1.35 W - - SOT-89 - NPN 500mV @ 50mA, 500mA 60 V
BSR31-QX
BSR31-QX
Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 1.35 W - - SOT-89 - PNP 500mV @ 50mA, 500mA 60 V
2SC5886A(T6L1,NQ)
2SC5886A(T6L1,NQ)
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Toshiba
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 - - - - - - - - 5 A 400 @ 500mA, 2V - - - - - - Surface Mount 150°C (TJ) 1 W - - PW-MOLD - NPN 220mV @ 32mA, 1.6A 50 V
FZT605TC
FZT605TC
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Diodes Incorporated
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 - - - - - - - - 1.5 A 2000 @ 1A, 5V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - NPN - Darlington 1.5V @ 1mA, 1A 120 V
FZT649TC
FZT649TC
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Diodes Incorporated
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 - - - - - - - - 3 A 100 @ 1A, 2V - - - 240MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - NPN 600mV @ 300mA, 3A 25 V
QSX1TR
QSX1TR
ROHM Semiconductor
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 - - - - - - - - 6 A 270 @ 500mA, 2V - - - 250MHz - - Surface Mount 150°C (TJ) 1.25 W - - TSMT6 (SC-95) - NPN 200mV @ 60mA, 3A 12 V
QSX2TR
QSX2TR
ROHM Semiconductor
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 - - - - - - - - 5 A 270 @ 500mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 500 mW - - TSMT6 (SC-95) - NPN 250mV @ 40mA, 2A 30 V
QST3TR
QST3TR
ROHM Semiconductor
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 - - - - - - - - 5 A 270 @ 500mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 1.25 W - - TSMT6 (SC-95) - PNP 250mV @ 40mA, 2A 30 V
CMPT2907A BK PBFREE
CMPT2907A BK PBFREE
Download Datasheet for CMPT2907A BK PBFREE
Central Semiconductor Corp
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP 1.6V @ 50mA, 500mA 60 V
FZT651TC
FZT651TC
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Diodes Incorporated
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 - - - - - - - - 3 A 100 @ 500mA, 2V - - - 175MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - NPN 600mV @ 300mA, 3A 60 V
MJD117-HF
MJD117-HF
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Comchip Technology
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 - - - - - - - - 2 A 1000 @ 2mA, 3V - - - 25MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.5 W - - TO-252-2 - - 3V @ 40mA, 4A 100 V
2N4264 PBFREE
2N4264 PBFREE
Download Datasheet for 2N4264 PBFREE
Central Semiconductor Corp
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 - - - - - - - - 200 mA 40 @ 30mA, 1V - - - 350MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 350mV @ 10mA, 100mA 15 V
2DA1774QQ-7
2DA1774QQ-7
Diodes Incorporated
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 - - - - - - - - 150 mA 120 @ 1mA, 6V - - - 140MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 500mV @ 5mA, 50mA 50 V
BSP50H6327XTSA1
BSP50H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - NPN - Darlington 1.8V @ 1mA, 1A 45 V
BSP52H6327XTSA1
BSP52H6327XTSA1
Download Datasheet for BSP52H6327XTSA1
Infineon Technologies
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - NPN - Darlington 1.8V @ 1mA, 1A 80 V
BSP60H6327XTSA1
BSP60H6327XTSA1
Download Datasheet for BSP60H6327XTSA1
Infineon Technologies
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - PNP - Darlington 1.8V @ 1mA, 1A 45 V
BSP61H6327XTSA1
BSP61H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - PNP - Darlington 1.8V @ 1mA, 1A 60 V
BSP62H6327XTSA1
BSP62H6327XTSA1
Download Datasheet for BSP62H6327XTSA1
Infineon Technologies
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - PNP - Darlington 1.8V @ 1mA, 1A 80 V
ZXTN19020CFFTA
ZXTN19020CFFTA
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Diodes Incorporated
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 - - - - - - - - 7 A 200 @ 100mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.5 W - - SOT-23F - NPN 175mV @ 280mA, 7A 20 V
ZXTP19020CFFTA
ZXTP19020CFFTA
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Diodes Incorporated
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 - - - - - - - - 5 A 200 @ 100mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.5 W - - SOT-23F - PNP 135mV @ 500mA, 5A 20 V
ZTX614QSTZ
ZTX614QSTZ
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Diodes Incorporated
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 - - - - - - - - 800 mA 10000 @ 500mA, 5V - - - - - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN - Darlington 1.25V @ 8mA, 800mA 100 V
2SD1963T100R
2SD1963T100R
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ROHM Semiconductor
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 - - - - - - - - 3 A 180 @ 500mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 450mV @ 150mA, 1.5A 20 V
CMPTA42 TR
CMPTA42 TR
Download Datasheet for CMPTA42 TR
Central Semiconductor Corp
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - NPN 500mV @ 2mA, 20mA 300 V
NSS20501UW3TBG
NSS20501UW3TBG
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On Semiconductor
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 - - - - - - - - 5 A 200 @ 2A, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 875 mW - - 3-WDFN (2x2) - NPN 125mV @ 400mA, 4A 20 V
BCV28H6327XTSA1
BCV28H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 1 W - - PG-SOT89 - PNP - Darlington 1V @ 100µA, 100mA 30 V
BCV29H6327XTSA1
BCV29H6327XTSA1
Download Datasheet for BCV29H6327XTSA1
Infineon Technologies
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 1 W - - PG-SOT89 - NPN - Darlington 1V @ 100µA, 100mA 30 V
DXT690BP5Q-13
DXT690BP5Q-13
Download Datasheet for DXT690BP5Q-13
Diodes Incorporated
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 - - - - - - - - 3 A 400 @ 1A, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 740 mW - - PowerDI™ 5 - NPN 350mV @ 150mA, 3A 45 V
BCV49H6327XTSA1
BCV49H6327XTSA1
Download Datasheet for BCV49H6327XTSA1
Infineon Technologies
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 1 W - - PG-SOT89 - NPN - Darlington 1V @ 100µA, 100mA 60 V
Showing 17601-17650 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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