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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
ZTX651QSTZ
ZTX651QSTZ
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Diodes Incorporated
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 - - - - - - - - 2 A 100 @ 500mA, 2V - - - 175MHz - - Through Hole -55°C ~ 200°C (TJ) 1.5 W - - E-Line (TO-92 compatible) - NPN 500mV @ 200mA, 2A 60 V
2N4150S
2N4150S
Microchip Technology
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 - - - - - - - - 10 A 50 @ 1A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - NPN 2.5V @ 1A, 10A 70 V
ZX5T851A
ZX5T851A
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Diodes Incorporated
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 - - - - - - - - 4.5 A 100 @ 2A, 1V - - - 130MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 210mV @ 200mA, 5A 60 V
ZXTN2010ASTZ
ZXTN2010ASTZ
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Diodes Incorporated
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 - - - - - - - - 4.5 A 100 @ 2A, 1V - - - 130MHz - - Through Hole -55°C ~ 150°C (TJ) 710 mW - - E-Line (TO-92 compatible) - NPN 210mV @ 200mA, 5A 60 V
ZTX751QSTZ
ZTX751QSTZ
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Diodes Incorporated
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 - - - - - - - - 2 A 100 @ 500mA, 2V - - - 140MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 500mV @ 200mA, 2A 60 V
ZTX790AQSTZ
ZTX790AQSTZ
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Diodes Incorporated
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 - - - - - - - - 2 A 300 @ 10mA, 2V - - - 100MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 750mV @ 50mA, 2A 40 V
ZTX753QSTZ
ZTX753QSTZ
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Diodes Incorporated
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 - - - - - - - - 2 A - - - - 140MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 500mV @ 200mA, 2A 100 V
CPH3140-TL-E
CPH3140-TL-E
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On Semiconductor
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 - - - - - - - - 1 A 140 @ 100mA, 5V - - - 120MHz - - Surface Mount 150°C (TJ) 900 mW - - 3-CPH - PNP 600mV @ 40mA, 400mA 100 V
HS2907A
HS2907A
Microchip Technology
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NJVMJD148T4G
NJVMJD148T4G
On Semiconductor
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 - - - - - - - - 4 A 85 @ 500mA, 1V - - - 3MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.75 W - - DPAK - NPN 500mV @ 200mA, 2A 45 V
2SAR572DGTL
2SAR572DGTL
ROHM Semiconductor
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 - - - - - - - - 5 A 200 @ 500mA, 3V - - - 300MHz - - Surface Mount 150°C (TJ) 10 W - - CPT3 - PNP 400mV @ 100mA, 2A 30 V
FZT692BQTA
FZT692BQTA
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Diodes Incorporated
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 - - - - - - - - 2 A 500 @ 100mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.2 W - - SOT-223 - NPN 500mV @ 200mA, 2A 70 V
BD680AG
BD680AG
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On Semiconductor
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 - - - - - - - - 4 A 750 @ 2A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - PNP - Darlington 2.8V @ 40mA, 2A 80 V
2SB1184-R-TP
2SB1184-R-TP
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Micro Commercial
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 - - - - - - - - 3 A 82 @ 500mA, 3V - - - 70MHz - - Surface Mount 150°C (TJ) 1 W - - D-Pak - PNP 1V @ 200mA, 2A 50 V
2SB1184-P-TP
2SB1184-P-TP
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Micro Commercial
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 - - - - - - - - 3 A 82 @ 500mA, 3V - - - 70MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - D-Pak - PNP 1V @ 200mA, 2A 50 V
FZT951TC
FZT951TC
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Diodes Incorporated
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 - - - - - - - - 5 A 100 @ 2A, 1V - - - 120MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - SOT-223-3 - PNP 460mV @ 500mA, 5A 60 V
2SCR543DTL
2SCR543DTL
ROHM Semiconductor
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 - - - - - - - - 4 A 180 @ 100mA, 3V - - - 300MHz - - Surface Mount 150°C (TJ) 10 W - - CPT3 - NPN 350mV @ 100mA, 2A 50 V
FZT690BQTA
FZT690BQTA
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Diodes Incorporated
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 - - - - - - - - 3 A 500 @ 100mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.2 W - - SOT-223 - NPN 500mV @ 5mA, 1A 45 V
CZT3904 BK PBFREE
CZT3904 BK PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223 - NPN 300mV @ 5mA, 50mA 40 V
2C5337-MSCL
2C5337-MSCL
Microchip Technology
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2SC5161TLB
2SC5161TLB
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ROHM Semiconductor
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 - - - - - - - - 2 A 25 @ 100mA, 5V - - - 10MHz - - Surface Mount 150°C (TJ) 1 W - - CPT3 - NPN 1V @ 200mA, 1A 400 V
ZX5T953GQTA
ZX5T953GQTA
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Diodes Incorporated
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 - - - - - - - - 5 A 100 @ 1A, 1V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.6 W - - SOT-223-3 - PNP 340mV @ 400mA, 4A 100 V
CZT2222A BK PBFREE
CZT2222A BK PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223 - NPN 1V @ 50mA, 500mA 40 V
CZT2907A BK PBFREE
CZT2907A BK PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223 - PNP 1.6V @ 50mA, 500mA 60 V
BUJ105AB,118
BUJ105AB,118
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WeEn Semiconductors
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 - - - - - - - - 8 A 13 @ 500mA, 5V - - - - - - Surface Mount 150°C (TJ) 125 W - - D2PAK - NPN 1V @ 800mA, 4A 400 V
BUJ106A,127
BUJ106A,127
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WeEn Semiconductors
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 - - - - - - - - 10 A 14 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 80 W - - TO-220AB - NPN 1V @ 1.2A, 6A 400 V
ZTX795ASTZ
ZTX795ASTZ
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Diodes Incorporated
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 - - - - - - - - 500 mA 300 @ 10mA, 2V - - - 100MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 250mV @ 50mA, 500mA 140 V
ZTX688BSTZ
ZTX688BSTZ
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Diodes Incorporated
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 - - - - - - - - 3 A 500 @ 100mA, 2V - - - 150MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 350mV @ 20mA, 3A 12 V
ZTX849STZ
ZTX849STZ
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Diodes Incorporated
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 - - - - - - - - 5 A 100 @ 1A, 1V - - - 100MHz - - Through Hole -55°C ~ 200°C (TJ) 1.2 W - - E-Line (TO-92 compatible) - NPN 220mV @ 200mA, 5A 30 V
ZTX968STZ
ZTX968STZ
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Diodes Incorporated
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 - - - - - - - - 4.5 A 300 @ 500mA, 1V - - - 80MHz - - Through Hole -55°C ~ 200°C (TJ) 1.58 W - - E-Line (TO-92 compatible) - PNP 300mV @ 200mA, 5A 12 V
STN878
STN878
STMicroelectronics
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 - - - - - - - - 5 A 100 @ 500mA, 1V - - - - - - Surface Mount 150°C (TJ) 1.6 W - - SOT-223 - NPN 1.2V @ 500mA, 10A 30 V
2SB1183TL
2SB1183TL
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ROHM Semiconductor
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 - - - - - - - - 2 A 1000 @ 500mA, 2V - - - - - - Surface Mount 150°C (TJ) 1 W - - CPT3 - PNP - Darlington 1.5V @ 1.2mA, 600mA 40 V
2SCR574DGTL
2SCR574DGTL
ROHM Semiconductor
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 - - - - - - - - 2 A 120 @ 100mA, 3V - - - 280MHz - - Surface Mount 150°C (TJ) 10 W - - CPT3 - NPN 300mV @ 50mA, 1A 80 V
ZTX1048ASTZ
ZTX1048ASTZ
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Diodes Incorporated
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 - - - - - - - - 4 A 300 @ 1A, 2V - - - 150MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 245mV @ 20mA, 4A 17.5 V
2C5681
2C5681
Microchip Technology
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ZTX1149ASTZ
ZTX1149ASTZ
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Diodes Incorporated
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 - - - - - - - - 3 A 250 @ 500mA, 2V - - - 135MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 300mV @ 70mA, 3A 25 V
ZTX788BSTZ
ZTX788BSTZ
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Diodes Incorporated
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 - - - - - - - - 3 A 500 @ 10mA, 2V - - - 100MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 450mV @ 10mA, 2A 15 V
ZTX790ASTZ
ZTX790ASTZ
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Diodes Incorporated
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 - - - - - - - - 2 A 300 @ 10mA, 2V - - - 100MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 750mV @ 50mA, 2A 40 V
TIP32A-BP
TIP32A-BP
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Micro Commercial
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220AB - PNP 1.2V @ 375mA, 3A 60 V
FZT953QTA
FZT953QTA
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Diodes Incorporated
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 - - - - - - - - 5 A 100 @ 1A, 1V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.6 W - - SOT-223-3 - PNP 420mV @ 400mA, 4A 100 V
COM-00522
COM-00522
SparkFun Electronics
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92 - - 400mV @ 5mA, 50mA 40 V
ZX5T849GTA
ZX5T849GTA
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Diodes Incorporated
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 - - - - - - - - 7 A 100 @ 1A, 1V - - - 140MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - SOT-223-3 - NPN 220mV @ 300mA, 6.5A 30 V
BDP947H6327XTSA1
BDP947H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 3 A 100 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 5 W - - PG-SOT223-4-24 - NPN 500mV @ 200mA, 2A 45 V
BDP948H6327XTSA1
BDP948H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 3 A 85 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 5 W - - PG-SOT223-4-10 - PNP 500mV @ 200mA, 2A 45 V
BDP948H6433XTMA1
BDP948H6433XTMA1
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Infineon Technologies
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 - - - - - - - - 3 A 85 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 5 W - - PG-SOT223-4 - PNP 500mV @ 200mA, 2A 45 V
BDP949H6327XTSA1
BDP949H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 3 A 100 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 5 W - - PG-SOT223-4-10 - NPN 500mV @ 200mA, 2A 60 V
BDP950H6327XTSA1
BDP950H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 3 A 85 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 5 W - - PG-SOT223-4-10 - PNP 500mV @ 200mA, 2A 60 V
BDP953H6327XTSA1
BDP953H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 3 A 100 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 5 W - - PG-SOT223-4-10 - NPN 500mV @ 200mA, 2A 100 V
BDP954H6327XTSA1
BDP954H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 3 A 85 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 5 W - - PG-SOT223-4-10 - PNP 500mV @ 200mA, 2A 100 V
MPS650 TIN/LEAD
MPS650 TIN/LEAD
Download Datasheet for MPS650 TIN/LEAD
Central Semiconductor Corp
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 - - - - - - - - 2 A 75 @ 1A, 2V - - - 75MHz - - Through Hole -65°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 200mA, 2A 40 V
Showing 17751-17800 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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