MSD1328-RT1G The MSD1328-RT1G is an NPN bipolar transistor from ON Semiconductor. It features a 20V voltage rating and a 500mA current capability.
Mfr Part #:

MSD1328-RT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MSD1328-RT1G is an NPN bipolar transistor from ON Semiconductor. It features a 20V voltage rating and a 500mA current capability.
Total Stock: 13,310 pcs
$ Price Range: $0.99

MSD1328-RT1G Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,310 pcs
7310 pcs On Request 1 On Request On Request 0916+1015+ On Request On Request
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request

MSD1328-RT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MSD1328-RT1G Description

Short technical summary and product information.

The MSD1328-RT1G is an NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. This component is designed for general-purpose amplification and switching applications.

 

Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 20V and a continuous collector current (Ic) of 500mA. The transistor offers a minimum DC current gain (hFE) of 200 at 500mA and 2V. Its saturation voltage (Vce(sat)) is specified at a maximum of 400mV when operating at 20mA base current and 500mA collector current. The device has a power dissipation rating of 200mW.

 

This transistor is housed in a TO-236-3, SC-59, SOT-23-3 package, designed for surface mounting. The operating temperature range extends up to 150°C (TJ). The MSD1328-RT1G is specified with a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions.

 

ON Semiconductor, now known as onsemi, provides this component. The part is compliant with RoHS3 standards.

MSD1328-RT1G Quick Information

Product Type: Bipolar Transistor
Canonical Name: MSD1328-RT1G NPN Bipolar Transistor
Subcategory: NPN

MSD1328-RT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MSD1328-RT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MSD1328-RT1G Features

  • NPN bipolar transistor for general use.
  • 20V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • 200mW power dissipation.
  • Surface mount SC-59 package.

MSD1328-RT1G Applications

  • Used in low-voltage switching circuits
  • Suitable for small-signal amplification
  • Ideal for space-constrained electronic designs
  • Applicable in portable device circuits

MSD1328-RT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MSD1328-RT1G?

The maximum collector-emitter voltage (Vce) for the MSD1328-RT1G is 20V.

What is the continuous collector current rating?

The MSD1328-RT1G can handle a continuous collector current of 500mA.

What is the power dissipation of this transistor?

The power dissipation for the MSD1328-RT1G is 200mW.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 200 at 500mA collector current and 2V collector-emitter voltage.

What is the operating temperature range?

The operating temperature range for the MSD1328-RT1G is up to 150°C (TJ).

What package type is the MSD1328-RT1G in?

The MSD1328-RT1G is supplied in a TO-236-3, SC-59, SOT-23-3 package for surface mounting.

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