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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BSP61H6327XTSA1
BSP61H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - PNP - Darlington 1.8V @ 1mA, 1A 60 V
BSP62H6327XTSA1
BSP62H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - PNP - Darlington 1.8V @ 1mA, 1A 80 V
ZXTN19020CFFTA
ZXTN19020CFFTA
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Diodes Incorporated
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 - - - - - - - - 7 A 200 @ 100mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.5 W - - SOT-23F - NPN 175mV @ 280mA, 7A 20 V
ZXTP19020CFFTA
ZXTP19020CFFTA
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Diodes Incorporated
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 - - - - - - - - 5 A 200 @ 100mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.5 W - - SOT-23F - PNP 135mV @ 500mA, 5A 20 V
ZTX614QSTZ
ZTX614QSTZ
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Diodes Incorporated
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 - - - - - - - - 800 mA 10000 @ 500mA, 5V - - - - - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN - Darlington 1.25V @ 8mA, 800mA 100 V
2SD1963T100R
2SD1963T100R
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ROHM Semiconductor
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 - - - - - - - - 3 A 180 @ 500mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 450mV @ 150mA, 1.5A 20 V
CMPTA42 TR
CMPTA42 TR
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Central Semiconductor Corp
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - NPN 500mV @ 2mA, 20mA 300 V
NSS20501UW3TBG
NSS20501UW3TBG
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On Semiconductor
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 - - - - - - - - 5 A 200 @ 2A, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 875 mW - - 3-WDFN (2x2) - NPN 125mV @ 400mA, 4A 20 V
BCV28H6327XTSA1
BCV28H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 1 W - - PG-SOT89 - PNP - Darlington 1V @ 100µA, 100mA 30 V
BCV29H6327XTSA1
BCV29H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 1 W - - PG-SOT89 - NPN - Darlington 1V @ 100µA, 100mA 30 V
DXT690BP5Q-13
DXT690BP5Q-13
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Diodes Incorporated
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 - - - - - - - - 3 A 400 @ 1A, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 740 mW - - PowerDI™ 5 - NPN 350mV @ 150mA, 3A 45 V
BCV49H6327XTSA1
BCV49H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 1 W - - PG-SOT89 - NPN - Darlington 1V @ 100µA, 100mA 60 V
ZXTP25140BFHQTA
ZXTP25140BFHQTA
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 10mA, 2V - - - 75MHz - - Surface Mount -55°C ~ 150°C (TJ) 5.84 W - - SOT-23-3 - PNP 260mV @ 100mA, 1A 140 V
2SD2679T100
2SD2679T100
ROHM Semiconductor
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 - - - - - - - - 2 A 270 @ 200mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 370mV @ 75mA, 1.5A 30 V
FCX1053AQTA
FCX1053AQTA
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Diodes Incorporated
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 - - - - - - - - 1.5 A 120 @ 200mA, 5V - - - 280MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 320mV @ 80mA, 800mA 120 V
BST50-QX
BST50-QX
Nexperia USA Inc.
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.3 W - - SOT-89 - NPN - Darlington 1.3V @ 500µA, 500mA 45 V
ZTX450QSTZ
ZTX450QSTZ
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 150MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 250mV @ 15mA, 150mA 45 V
ZTX455QSTZ
ZTX455QSTZ
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 100MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 700mV @ 15mA, 150mA 140 V
FZT560TC
FZT560TC
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Diodes Incorporated
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 - - - - - - - - 150 mA 80 @ 50mA, 10V - - - 60MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - PNP 500mV @ 10mA, 50mA 500 V
BCP5116H6327XTSA1
BCP5116H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4-24 - PNP 500mV @ 50mA, 500mA 45 V
BCP5116H6433XTMA1
BCP5116H6433XTMA1
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Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4-10 - PNP 500mV @ 50mA, 500mA 45 V
BCP5216H6327XTSA1
BCP5216H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4-10 - PNP 500mV @ 50mA, 500mA 60 V
BCP5310H6327XTSA1
BCP5310H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4-10 - PNP 500mV @ 50mA, 500mA 80 V
BCP5316H6433XTMA1
BCP5316H6433XTMA1
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Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4-10 - PNP 500mV @ 50mA, 500mA 80 V
2SC3786
2SC3786
Sanyo Denki
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 - - - - - - - - - - - - - - - - - - - - - - - - - -
BCP5416H6327XTSA1
BCP5416H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4-10 - NPN 500mV @ 50mA, 500mA 45 V
BCP5416H6433XTMA1
BCP5416H6433XTMA1
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Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4 - NPN 500mV @ 50mA, 500mA 45 V
BCP5516H6327XTSA1
BCP5516H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4-10 - NPN 500mV @ 50mA, 500mA 60 V
BCP5610H6327XTSA1
BCP5610H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4-10 - NPN 500mV @ 50mA, 500mA 80 V
BCP5616H6327XTSA1
BCP5616H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4-10 - NPN 500mV @ 50mA, 500mA 80 V
BCX6810H6327XTSA1
BCX6810H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 85 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 3 W - - PG-SOT89 - NPN 500mV @ 100mA, 1A 20 V
BCX6816H6327XTSA1
BCX6816H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 100 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 3 W - - PG-SOT89 - NPN 500mV @ 100mA, 1A 20 V
BCX6825H6327XTSA1
BCX6825H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 160 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 3 W - - PG-SOT89 - NPN 500mV @ 100mA, 1A 20 V
2N6428 PBFREE
2N6428 PBFREE
Central Semiconductor Corp
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 - - - - - - - - 200 mA 250 @ 10mA, 5V - - - 100MHz - - Through Hole -65°C ~ 150°C (TJ) 1.5 W - - TO-92 - NPN 600mV @ 5mA, 100mA 50 V
2SC4132T100R
2SC4132T100R
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ROHM Semiconductor
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 - - - - - - - - 2 A 180 @ 100mA, 5V - - - 80MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 2V @ 100mA, 1A 120 V
BSR43-TP
BSR43-TP
Micro Commercial
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 500 mW - - SOT-89 - NPN 500mV @ 50mA, 500mA 80 V
BUJ303CD,118
BUJ303CD,118
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WeEn Semiconductors
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 - - - - - - - - 5 A 28 @ 10mA, 3V - - - - - - Surface Mount 150°C (TJ) 80 W - - DPAK - NPN 1.5V @ 1A, 3A 400 V
FZT753QTC
FZT753QTC
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Diodes Incorporated
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 - - - - - - - - 2 A 100 @ 500mA, 2V - - - 140MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.2 W - - SOT-223-3 - PNP 500mV @ 200mA, 2A 100 V
MJD31C-TP
MJD31C-TP
Micro Commercial
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.25 W - - D-Pak - NPN 1.2V @ 375mA, 3A 100 V
FZT651QTC
FZT651QTC
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Diodes Incorporated
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 - - - - - - - - 3 A 100 @ 500mA, 2V - - - 175MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - NPN 600mV @ 300mA, 3A 60 V
PZTA14H6327XTSA1
PZTA14H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 300 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
BCX6910H6327XTSA1
BCX6910H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 85 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 3 W - - PG-SOT89 - PNP 500mV @ 100mA, 1A 20 V
BCX6916H6327XTSA1
BCX6916H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 100 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 3 W - - PG-SOT89 - PNP 500mV @ 100mA, 1A 20 V
BCX6925H6327XTSA1
BCX6925H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 160 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 3 W - - PG-SOT89 - PNP 500mV @ 100mA, 1A 20 V
TIP42A-BP
TIP42A-BP
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Micro Commercial
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 - - - - - - - - 6 A 30 @ 300mA, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220AB - PNP 1.5V @ 600mA, 6A 60 V
2SB1184TLP
2SB1184TLP
Download Datasheet for 2SB1184TLP
ROHM Semiconductor
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 - - - - - - - - 3 A 82 @ 500mA, 3V - - - 70MHz - - Surface Mount 150°C (TJ) 1 W - - CPT3 - PNP 1V @ 200mA, 2A 50 V
ZTX757STZ
ZTX757STZ
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Diodes Incorporated
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 - - - - - - - - 500 mA 50 @ 100mA, 5V - - - 30MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 500mV @ 10mA, 100mA 300 V
FZT458QTA
FZT458QTA
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Diodes Incorporated
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 - - - - - - - - 300 mA 100 @ 50mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - NPN 500mV @ 6mA, 50mA 400 V
2SA2097(TE16L1,NQ)
2SA2097(TE16L1,NQ)
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Toshiba
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 - - - - - - - - 5 A 200 @ 500mA, 2V - - - - - - Surface Mount 150°C (TJ) 1 W - - PW-MOLD - PNP 270mV @ 53mA, 1.6A 50 V
BST60-QX
BST60-QX
Nexperia USA Inc.
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 - - - - - - - - 1 A 20000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.3 W - - SOT-89 - PNP - Darlington 1.3V @ 500µA, 500mA 45 V
Showing 17651-17700 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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