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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MMBTA92
MMBTA92
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Diotec Semiconductor
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 - - - - - - - - 500 mA 80 @ 10mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - SOT-23-3 (TO-236) - PNP 500mV @ 2mA, 20mA 300 V
PBHV9110DA-AU_R1_000A1
PBHV9110DA-AU_R1_000A1
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PANJIT
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 - - - - - - - - 1 A 140 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.25 W - - SOT-23 - PNP 600mV @ 100mA, 1A 100 V
BCP53-16-AU_R2_000A1
BCP53-16-AU_R2_000A1
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PANJIT
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2.6 W - - SOT-223 - PNP 600mV @ 100mA, 1A 100 V
BCP56-16-AU_R2_000A1
BCP56-16-AU_R2_000A1
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PANJIT
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.6 W - - SOT-223 - NPN 500mV @ 100mA, 1A 100 V
2SA673C-E
2SA673C-E
Renesas
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NSS35200CF8T1G
NSS35200CF8T1G
Sanyo Denki
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 - - - - - - - - 2 A 100 @ 1.5A, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 635 mW - - ChipFET™ - PNP 300mV @ 20mA, 2A 35 V
MMBTA56
MMBTA56
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Diotec Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - SOD-323 - PNP 250mV @ 10mA, 100mA 80 V
BC857AE6327HTSA1
BC857AE6327HTSA1
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Infineon Technologies
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 650mV @ 5mA, 100mA 45 V
PBHV8050SA_R1_00001
PBHV8050SA_R1_00001
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PANJIT
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 - - - - - - - - 150 mA 150 @ 1mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 500 mW - - SOT-23 - NPN 500mV @ 10mA, 50mA 500 V
2SB1429_R1_00001
2SB1429_R1_00001
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PANJIT
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 160MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.25 W - - SOT-23 - PNP 300mV @ 300mA, 3A 20 V
PBHV9110DW_R2_00001
PBHV9110DW_R2_00001
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PANJIT
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 - - - - - - - - 1 A 140 @ 150mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.6 W - - SOT-223 - PNP 600mV @ 100mA, 1A 100 V
KSD882YS
KSD882YS
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On Semiconductor
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 - - - - - - - - 3 A 160 @ 1A, 2V - - - 90MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-126-3 - NPN 500mV @ 200mA, 2A 30 V
2SB1197A_R1_00001
2SB1197A_R1_00001
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PANJIT
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 - - - - - - - - 3 A 100 @ 1A, 2V - - - 180MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.25 W - - SOT-23 - PNP 500mV @ 200mA, 2A 50 V
PBHV8110DA_R1_00001
PBHV8110DA_R1_00001
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PANJIT
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 - - - - - - - - 1 A 140 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.25 W - - SOT-23 - NPN 450mV @ 100mA, 1A 100 V
PBHV9110DA_R1_00001
PBHV9110DA_R1_00001
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PANJIT
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 - - - - - - - - 1 A 100 @ 500mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.25 W - - SOT-23 - PNP 600mV @ 100mA, 1A 100 V
NJVMJD44H11D3T4G
NJVMJD44H11D3T4G
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On Semiconductor
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 - - - - - - - - 8 A 40 @ 4A, 1V - - - 85MHz - - Surface Mount -55°C ~ 150°C (TJ) 20 W - - DPAK - NPN 1V @ 400mA, 8A 80 V
5962-8777801XA
5962-8777801XA
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Texas Instruments
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 - - - - - - - - - - - - - - - - Through Hole -55°C ~ 125°C - - - TO-3 - NPN - Darlington - 42 V
2N3964 PBFREE
2N3964 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 200 mA 250 @ 1mA, 5V - - - 50MHz - - Through Hole -65°C ~ 200°C (TJ) 360 mW - - TO-18 - PNP 400mV @ 5mA, 50mA 45 V
BC857B-TP
BC857B-TP
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Micro Commercial
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 45 V
MMBT3904HE3-TP
MMBT3904HE3-TP
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Micro Commercial
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23 - - 300mV @ 5mA, 50mA 40 V
MMBTA55-TP
MMBTA55-TP
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Micro Commercial
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23 - PNP 250mV @ 10mA, 100mA 60 V
2N3391A PBFREE
2N3391A PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 100nA (ICBO) 250 @ 2mA, 4.5V - - - 120MHz - - Through Hole -65°C ~ 150°C (TJ) - - - TO-92-3 - NPN - 25 V
TTA004B,Q
TTA004B,Q
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Toshiba
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 - - - - - - - - 1.5 A 140 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 10 W - - TO-126N - PNP 500mV @ 50mA, 500mA 160 V
MPSA64 PBFREE
MPSA64 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole -65°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
2SC5706-TL-E
2SC5706-TL-E
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On Semiconductor
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 - - - - - - - - 5 A 200 @ 500mA, 2V - - - 400MHz - - Surface Mount 150°C (TJ) 800 mW - - TP-FA - NPN 240mV @ 100mA, 2A 50 V
ZTX696B
ZTX696B
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Diodes Incorporated
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 - - - - - - - - 500 mA 150 @ 200mA, 5V - - - 70MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 250mV @ 5mA, 200mA 180 V
TIP41BG
TIP41BG
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On Semiconductor
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN 1.5V @ 600mA, 6A 80 V
BD242CG
BD242CG
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On Semiconductor
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220 - PNP 1.2V @ 600mA, 3A 100 V
2N6491G
2N6491G
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On Semiconductor
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 - - - - - - - - 15 A 20 @ 5A, 4V - - - 5MHz - - Through Hole -65°C ~ 150°C (TJ) 1.8 W - - TO-220 - PNP 3.5V @ 5A, 15A 80 V
KSC2334Y
KSC2334Y
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On Semiconductor
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 - - - - - - - - 7 A 120 @ 3A, 5V - - - - - - Through Hole 150°C (TJ) 1.5 W - - TO-220-3 - NPN 600mV @ 500mA, 5A 100 V
BDX53BG
BDX53BG
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On Semiconductor
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 65 W - - TO-220 - NPN - Darlington 2V @ 12mA, 3A 80 V
2N6109 PBFREE
2N6109 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 7 A 30 @ 2.5A, 4V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220-3 - PNP 3.5V @ 3A, 7A 50 V
2SA1725
2SA1725
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Sanken
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 - - - - - - - - 6 A 50 @ 2A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 30 W - - TO-220F - PNP 500mV @ 200mA, 2A 80 V
2N2102 PBFREE
2N2102 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 40 @ 150mA, 10V - - - 60MHz - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - NPN - 65 V
2SC5200N(S1,E,S)
2SC5200N(S1,E,S)
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Toshiba
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 - - - - - - - - 15 A 80 @ 1A, 5V - - - 30MHz - - Through Hole 150°C (TJ) 150 W - - TO-3P(N) - NPN 3V @ 800mA, 8A 230 V
2N2270 PBFREE
2N2270 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 50 @ 150mA, 10V - - - 100MHz - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - NPN 900mV @ 15mA, 150mA 45 V
2N2405 PBFREE
2N2405 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 60 @ 150mA, 10V - - - 120MHz - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - NPN 500mV @ 15mA, 150mA 90 V
2SC4024
2SC4024
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Sanken
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 - - - - - - - - 10 A 300 @ 1A, 4V - - - 24MHz - - Through Hole 150°C (TJ) 35 W - - TO-220F - NPN 500mV @ 100mA, 5A 50 V
2N4037 PBFREE
2N4037 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 50 @ 150mA, 10V - - - 60MHz - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - PNP 1.4V @ 15mA, 150mA 40 V
2SAR553PHZGT100
2SAR553PHZGT100
ROHM Semiconductor
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 - - - - - - - - 2 A 180 @ 50mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - PNP 400mV @ 35mA, 700mA 50 V
2SC2621E-RA
2SC2621E-RA
On Semiconductor
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2SD600KE
2SD600KE
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2SC5310-6-TB-E
2SC5310-6-TB-E
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MJE18206
MJE18206
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2SC4159D
2SC4159D
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2SC536F-SPA-AC
2SC536F-SPA-AC
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2SB631E
2SB631E
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TIP111
TIP111
Harris Semiconductor
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220AB - NPN - Darlington 2.5V @ 8mA, 2A 80 V
2SC5772FR-TL-E
2SC5772FR-TL-E
Renesas
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2SC5890FS-TL-E
2SC5890FS-TL-E
Renesas
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Showing 17251-17300 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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