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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
JANTXV2N5012
JANTXV2N5012
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 25mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN - 700 V
JANTXV2N5012S
JANTXV2N5012S
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 25mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN - 700 V
2SJ550S-E
2SJ550S-E
Renesas
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JANTXV2N5013
JANTXV2N5013
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN - 800 V
JANTXV2N5013S
JANTXV2N5013S
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN - 800 V
JANTXV2N5014
JANTXV2N5014
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN - 900 V
JANTXV2N5014S
JANTXV2N5014S
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN - 900 V
JANTXV2N5015
JANTXV2N5015
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN - 1000 V
JANTXV2N5015S
JANTXV2N5015S
Microsemi Corporation
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 - - - - - - - - 200 mA 30 @ 20mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN - 1000 V
JANTXV2N5415U4
JANTXV2N5415U4
Microchip Technology
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 - - - - - - - - 50 µA 30 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 2V @ 5mA, 50mA 200 V
JANTXV2N5661
JANTXV2N5661
Microchip Technology
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 - - - - - - - - 2 A 25 @ 500mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 2 W - - TO-66 (TO-213AA) - NPN 800mV @ 400mA, 2A 300 V
JANTXV2N5661U3
JANTXV2N5661U3
Microchip Technology
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 - - - - - - - - 2 A 25 @ 500mA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 2 W - - U3 - NPN 800mV @ 400mA, 2A 300 V
JANTXV2N6211
JANTXV2N6211
Microchip Technology
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 - - - - - - - - 5 mA 30 @ 1A, 5V - - - - - - Through Hole -55°C ~ 200°C (TA) 3 W - - TO-66 (TO-213AA) - PNP 1.4V @ 125mA, 1A 225 V
JANTXV2N6212
JANTXV2N6212
Microchip Technology
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 - - - - - - - - 5 mA 30 @ 1A, 5V - - - - - - Through Hole -55°C ~ 200°C (TA) 3 W - - TO-66 (TO-213AA) - PNP 1.6V @ 125mA, 1A 300 V
2N1016D
2N1016D
Microsemi Corporation
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 - - - - - - - - 7.5 A 6 @ 7.5A, 4V - - - - - - - -65°C ~ 150°C (TJ) 150 W - - TO-82 - NPN 2.5V @ 1A, 5A 200 V
JANTXV2N6213
JANTXV2N6213
Microchip Technology
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 - - - - - - - - 5 mA 30 @ 1A, 5V - - - - - - Through Hole -55°C ~ 200°C (TA) 3 W - - TO-66 (TO-213AA) - PNP 2V @ 125mA, 1A 350 V
JANTXV2N6306T1
JANTXV2N6306T1
Microchip Technology
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 - - - - - - - - 8 A - - - - - - - Through Hole 200°C (TJ) - - - TO-254 - NPN - 250 V
JANTXV2N6308T1
JANTXV2N6308T1
Microchip Technology
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 - - - - - - - - 8 A - - - - - - - Through Hole 200°C (TJ) - - - TO-254 - NPN - 350 V
JANTXV2N6438
JANTXV2N6438
Microchip Technology
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 - - - - - - - - 25 A - - - - - - - Through Hole 200°C (TJ) - - - TO-3 - PNP - 120 V
JANTXV2N6546T1
JANTXV2N6546T1
Microchip Technology
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 - - - - - - - - 15 A - - - - - - - Through Hole 200°C (TJ) - - - TO-254 - NPN - 300 V
JANTXV2N6547T1
JANTXV2N6547T1
Microchip Technology
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 - - - - - - - - 15 A - - - - - - - Through Hole 200°C (TJ) - - - TO-254 - NPN - 400 V
JANTXV2N6678T1
JANTXV2N6678T1
Microchip Technology
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 - - - - - - - - 15 A - - - - - - - Through Hole 200°C (TJ) - - - TO-254 - NPN - 400 V
JANTXV2N6689
JANTXV2N6689
Microchip Technology
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 - - - - - - - - 100 µA 15 @ 1A, 3V - - - - - - Stud Mount -65°C ~ 200°C (TA) 3 W - - TO-61 - NPN 5V @ 5A, 15A 300 V
JANTXV2N6690
JANTXV2N6690
Microchip Technology
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 - - - - - - - - 100 µA 15 @ 1A, 3V - - - - - - Stud Mount -65°C ~ 200°C (TA) 3 W - - TO-61 - NPN 5V @ 5A, 15A 400 V
JANTXV2N6691
JANTXV2N6691
Microchip Technology
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 - - - - - - - - 15 A 15 @ 1A, 3V - - - - - - Stud Mount -65°C ~ 200°C (TJ) 3 W - - TO-61 - NPN 1V @ 3A, 15A 300 V
JANTXV2N6693
JANTXV2N6693
Microchip Technology
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 - - - - - - - - 15 A 15 @ 1A, 3V - - - - - - Stud Mount -65°C ~ 200°C (TJ) 3 W - - TO-61 - NPN 1V @ 3A, 15A 400 V
JANTXV2N930UB
JANTXV2N930UB
Microchip Technology
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 - - - - - - - - 30 mA - - - - - - - Surface Mount 200°C (TJ) - - - UB - NPN - 45 V
JANS2N3634
JANS2N3634
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 140 V
JANS2N3634L
JANS2N3634L
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 600mV @ 5mA, 50mA 140 V
JANS2N3634UB/TR
JANS2N3634UB/TR
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - UB - PNP 600mV @ 5mA, 50mA 140 V
JANS2N3636
JANS2N3636
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 175 V
JANS2N3636L
JANS2N3636L
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 600mV @ 5mA, 50mA 175 V
JANS2N3636UB
JANS2N3636UB
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1.5 W - - UB - PNP 600mV @ 5mA, 50mA 175 V
JANSD2N3634
JANSD2N3634
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 140 V
JANSD2N3634L
JANSD2N3634L
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 600mV @ 5mA, 50mA 140 V
JANSD2N3634UB
JANSD2N3634UB
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - UB - PNP 600mV @ 5mA, 50mA 140 V
JANSD2N3634UB/TR
JANSD2N3634UB/TR
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - UB - PNP 600mV @ 5mA, 50mA 140 V
JANSD2N3636
JANSD2N3636
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 175 V
JANSD2N3636L
JANSD2N3636L
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 600mV @ 5mA, 50mA 175 V
2N4865
2N4865
Microchip Technology
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JANSD2N3636UB
JANSD2N3636UB
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1.5 W - - UB - PNP 600mV @ 5mA, 50mA 175 V
JANSD2N3636UB/TR
JANSD2N3636UB/TR
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1.5 W - - UB - PNP 600mV @ 5mA, 50mA 175 V
JANSD2N5002
JANSD2N5002
Microchip Technology
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 - - - - - - - - 50 µA 30 @ 2.5A, 5V - - - - - - Stud Mount -65°C ~ 200°C (TJ) 2 W - - TO-59 - NPN 1.5V @ 500mA, 5A 80 V
JANSD2N5004
JANSD2N5004
Microchip Technology
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 - - - - - - - - 50 µA 70 @ 2.5A, 5V - - - - - - Stud Mount -65°C ~ 200°C (TJ) 2 W - - TO-59 - NPN 1.5V @ 500mA, 5A 80 V
JANSF2N5004
JANSF2N5004
Microchip Technology
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 - - - - - - - - 50 µA 70 @ 2.5A, 5V - - - - - - Stud Mount -65°C ~ 200°C (TJ) 2 W - - TO-59 - NPN 1.5V @ 500mA, 5A 80 V
JANSL2N3634
JANSL2N3634
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 140 V
JANSL2N3634L
JANSL2N3634L
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 600mV @ 5mA, 50mA 140 V
JANSL2N3634UB
JANSL2N3634UB
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - UB - PNP 600mV @ 5mA, 50mA 140 V
JANSL2N3634UB/TR
JANSL2N3634UB/TR
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - UB - PNP 600mV @ 5mA, 50mA 140 V
JANSL2N3636
JANSL2N3636
Microchip Technology
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 - - - - - - - - 10 µA 50 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 5mA, 50mA 175 V
Showing 17351-17400 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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