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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N4401_J60Z
2N4401_J60Z
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 600 mA 100 @ 150mA, 1V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 750mV @ 50mA, 500mA 40 V
2N4401_J61Z
2N4401_J61Z
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 600 mA 100 @ 150mA, 1V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 750mV @ 50mA, 500mA 40 V
2N4401_S00Z
2N4401_S00Z
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 600 mA 100 @ 150mA, 1V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 750mV @ 50mA, 500mA 40 V
2N4402TAR
2N4402TAR
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 600 mA 50 @ 150mA, 2V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
2N5087_J18Z
2N5087_J18Z
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 100 mA 250 @ 100µA, 5V 40MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 300mV @ 1mA, 10mA 50 V
2N5087TAR
2N5087TAR
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 100 mA 250 @ 100µA, 5V 40MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 300mV @ 1mA, 10mA 50 V
2N5088_D11Z
2N5088_D11Z
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 100 mA 300 @ 100µA, 5V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 500mV @ 1mA, 10mA 30 V
2N5088TFR
2N5088TFR
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 100 mA 300 @ 100µA, 5V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 500mV @ 1mA, 10mA 30 V
2N5089_J18Z
2N5089_J18Z
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 100 mA 400 @ 100µA, 5V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 500mV @ 1mA, 10mA 25 V
2SC3708S-AA
2SC3708S-AA
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2N5400_D75Z
2N5400_D75Z
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 600 mA 40 @ 10mA, 5V 400MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 5mA, 50mA 120 V
2N5401TAR
2N5401TAR
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 600 mA 60 @ 10mA, 5V 400MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 5mA, 50mA 150 V
2N5551TAR
2N5551TAR
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 600 mA 80 @ 10mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 200mV @ 5mA, 50mA 160 V
2N5961_D27Z
2N5961_D27Z
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 100 mA 150 @ 10mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 200mV @ 500µA, 10mA 60 V
2N6427_D27Z
2N6427_D27Z
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 1.2 A 14000 @ 500mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.5V @ 500µA, 500mA 40 V
2N6427_D75Z
2N6427_D75Z
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 1.2 A 14000 @ 500mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.5V @ 500µA, 500mA 40 V
BC182_D74Z
BC182_D74Z
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 100 mA 120 @ 2mA, 5V 150MHz Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 600mV @ 5mA, 100mA 50 V
BC182_ND74Z
BC182_ND74Z
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 100 mA 120 @ 2mA, 5V 150MHz Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 600mV @ 5mA, 100mA 50 V
BC182L
BC182L
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 100 mA 120 @ 2mA, 5V 150MHz Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 600mV @ 5mA, 100mA 50 V
BC182LB_D27Z
BC182LB_D27Z
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 100 mA 40 @ 10µA, 5V 150MHz Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 600mV @ 5mA, 100mA 50 V
BC182LB_D74Z
BC182LB_D74Z
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 100 mA 40 @ 10µA, 5V 150MHz Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 600mV @ 5mA, 100mA 50 V
2SA952-A
2SA952-A
Renesas
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BC238BBU
BC238BBU
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 100 mA 180 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BC238BTA
BC238BTA
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 100 mA 180 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BC307BTFR
BC307BTFR
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 100 mA 180 @ 2mA, 5V 130MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 500mV @ 5mA, 100mA 45 V
BC32716TAR
BC32716TAR
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 800 mA 100 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 700mV @ 50mA, 500mA 45 V
BC32716TFR
BC32716TFR
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 800 mA 100 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 700mV @ 50mA, 500mA 45 V
BC32725_J18Z
BC32725_J18Z
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 800 mA 160 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 700mV @ 50mA, 500mA 45 V
BC32725TAR
BC32725TAR
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 800 mA 160 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 700mV @ 50mA, 500mA 45 V
BC368_D74Z
BC368_D74Z
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 2 A 85 @ 500mA, 1V 45MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 500mV @ 100mA, 1A 20 V
BC369_D27Z
BC369_D27Z
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 1.5 A 85 @ 500mA, 1V 45MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 100mA, 1A 20 V
BC517_D27Z
BC517_D27Z
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 1.2 A 30000 @ 20mA, 2V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1V @ 100µA, 100mA 30 V
BC517_D75Z
BC517_D75Z
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 1.2 A 30000 @ 20mA, 2V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1V @ 100µA, 100mA 30 V
BC547CTAR
BC547CTAR
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 100 mA 420 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
BC548ATFR
BC548ATFR
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC548BTAR
BC548BTAR
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC548BTF
BC548BTF
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC548BTFR
BC548BTFR
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC548CTFR
BC548CTFR
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 100 mA 420 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC549BTAR
BC549BTAR
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC549BTFR
BC549BTFR
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC549CTFR
BC549CTFR
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 100 mA 420 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC550B
BC550B
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
2SC3645T-TD-E
2SC3645T-TD-E
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BC638TFR
BC638TFR
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 500mA 60 V
BC639_L34Z
BC639_L34Z
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 80 V
BC63916
BC63916
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 1 A 100 @ 150mA, 2V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 80 V
BC63916_D26Z
BC63916_D26Z
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 1 A 100 @ 150mA, 2V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 80 V
BC640TAR
BC640TAR
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 500mA 80 V
BC640TFR
BC640TFR
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 500mA 80 V
Showing 17201-17250 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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