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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
PN5139
PN5139
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On Semiconductor
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 - - - - - - - - 100 mA 40 @ 1mA, 10V - - - - - - Through Hole - 625 mW - - TO-92S - PNP 150mV @ 100µA, 1mA 20 V
PN5142
PN5142
On Semiconductor
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 - - - - - - - - 500 mA - - - - - - - Through Hole - - - - TO-92-3 - PNP - 20 V
MPS2924
MPS2924
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On Semiconductor
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 - - - - - - - - 100 mA 150 @ 2mA, 10V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN - 25 V
MPS3392
MPS3392
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On Semiconductor
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 - - - - - - - - 100 mA 150 @ 2mA, 4.5V - - - - - - Through Hole - 625 mW - - TO-92-3 - NPN - 25 V
MPS6561
MPS6561
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On Semiconductor
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 - - - - - - - - 600 mA 50 @ 350mA, 1V - - - 60MHz - - Through Hole - 625 mW - - TO-92-3 - NPN 500mV @ 35mA, 350mA 20 V
PN2222BU
PN2222BU
On Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 30 V
2N2222
2N2222
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On Semiconductor
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole - 500 mW - - TO-18 - NPN 1.6V @ 50mA, 500mA 30 V
2SB1131S-AE
2SB1131S-AE
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FMMTA06TA
FMMTA06TA
Diodes Incorporated
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 - - - - - - - - 500 mA 50 @ 10mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23-3 - NPN 250mV @ 10mA, 100mA 80 V
FMMTA14TA
FMMTA14TA
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Diodes Incorporated
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 - - - - - - - - 300 mA 20000 @ 100mA, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23-3 - NPN - Darlington 900mV @ 100µA, 100mA 40 V
FMMTA13TA
FMMTA13TA
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Diodes Incorporated
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 - - - - - - - - 300 mA 10000 @ 100mA, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23-3 - NPN - Darlington 900mV @ 100µA, 100mA 40 V
FMMTA64TA
FMMTA64TA
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Diodes Incorporated
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23-3 - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
FMMT3906TA
FMMT3906TA
Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23-3 - PNP 400mV @ 5mA, 50mA 40 V
MMBTA13-7
MMBTA13-7
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Diodes Incorporated
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 - - - - - - - - 300 mA 10000 @ 100mA, 5V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MMBT5401-7
MMBT5401-7
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Diodes Incorporated
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - PNP 500mV @ 5mA, 50mA 150 V
BC869TA
BC869TA
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Diodes Incorporated
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 - - - - - - - - 1 A 85 @ 500mA, 1V - - - 60MHz - - Surface Mount -65°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 500mV @ 100mA, 1A 20 V
ZTX712
ZTX712
Download Datasheet for ZTX712
Diodes Incorporated
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 - - - - - - - - 800 mA 10000 @ 500mA, 5V - - - - - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP - Darlington 1.25V @ 8mA, 800mA 60 V
BST15TA
BST15TA
Diodes Incorporated
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 - - - - - - - - 500 mA 30 @ 50mA, 10V - - - 15MHz - - Surface Mount -65°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 2V @ 5mA, 50mA 200 V
BST61TA
BST61TA
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Diodes Incorporated
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 - - - - - - - - 500 mA 1000 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP - Darlington 1.3V @ 500µA, 500mA 60 V
BCV29TA
BCV29TA
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Diodes Incorporated
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - NPN - Darlington 1V @ 100µA, 100mA 30 V
BC868TA
BC868TA
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Diodes Incorporated
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 - - - - - - - - 1 A 85 @ 500mA, 1V - - - 60MHz - - Surface Mount -65°C ~ 150°C (TJ) 1 W - - SOT-89-3 - NPN 500mV @ 100mA, 1A 20 V
2N5551
2N5551
Diodes Incorporated
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 - - - - - - - - 200 mA 80 @ 10mA, 5V - - - 300MHz - - Through Hole - 625 mW - - TO-92 - NPN 200mV @ 5mA, 50mA 160 V
SPS9607RLRM
SPS9607RLRM
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2SB1320A0A
2SB1320A0A
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Panasonic Electronic Components
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 80MHz - - Through Hole 150°C (TJ) 400 mW - - MT-1-A1 - PNP 1V @ 10mA, 100mA 50 V
2SB1321A0A
2SB1321A0A
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 85 @ 10mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 600 mW - - MT-1-A1 - PNP 600mV @ 30mA, 300mA 50 V
2SB1322A0A
2SB1322A0A
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Panasonic Electronic Components
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 - - - - - - - - 1 A 85 @ 500mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - PNP 400mV @ 50mA, 500mA 50 V
2SB143400A
2SB143400A
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Panasonic Electronic Components
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 - - - - - - - - 2 A 120 @ 200mA, 2V - - - 110MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - PNP 300mV @ 50mA, 1A 50 V
2SB0709A0L
2SB0709A0L
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Panasonic Electronic Components
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 80MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 500mV @ 10mA, 100mA 45 V
2SB0710A0L
2SB0710A0L
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 85 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 50 V
2SB071000L
2SB071000L
Panasonic Electronic Components
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 - - - - - - - - 500 mA 85 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - PNP 600mV @ 30mA, 300mA 25 V
2SC248000L
2SC248000L
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Panasonic Electronic Components
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 - - - - - - - - 50 mA 25 @ 2mA, 10V - - - 1.6GHz - - Surface Mount 150°C (TJ) 150 mW - - Mini3-G1 - NPN - 20 V
2SD1820A0L
2SD1820A0L
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 85 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - NPN 600mV @ 30mA, 300mA 50 V
2SA0794AR
2SA0794AR
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 130 @ 150mA, 10V - - - 120MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - PNP 400mV @ 50mA, 500mA 120 V
2SA08850R
2SA08850R
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Panasonic Electronic Components
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 - - - - - - - - 1 A 120 @ 500mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 5 W - - TO-126B-A1 - PNP 500mV @ 50mA, 500mA 35 V
2SA08860Q
2SA08860Q
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 80 @ 1A, 5V - - - 150MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - PNP 1V @ 150mA, 1.5A 40 V
2SA09000R
2SA09000R
Panasonic Electronic Components
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 - - - - - - - - 1 A 130 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - PNP 500mV @ 50mA, 500mA 18 V
2SA09140R
2SA09140R
Panasonic Electronic Components
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 - - - - - - - - 50 mA 130 @ 10mA, 5V - - - 70MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - PNP 1V @ 3mA, 30mA 150 V
2SA0963
2SA0963
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 80 @ 1A, 5V - - - 150MHz - - Through Hole 150°C (TJ) 10 W - - TO-126A-A1 - PNP 1V @ 150mA, 1.5A 40 V
2SB1011
2SB1011
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Panasonic Electronic Components
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 - - - - - - - - 100 mA 30 @ 30mA, 5V - - - 70MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - PNP 2.5V @ 5mA, 50mA 400 V
2SB1548AP
2SB1548AP
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Panasonic Electronic Components
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 - - - - - - - - 3 A 120 @ 1A, 4V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - PNP 1.2V @ 375mA, 3A 80 V
2SB0940AP
2SB0940AP
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Panasonic Electronic Components
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 - - - - - - - - 2 A 100 @ 150mA, 10V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - PNP 1V @ 50mA, 500mA 180 V
2SB09430P
2SB09430P
Panasonic Electronic Components
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 - - - - - - - - 3 A 130 @ 500mA, 2V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - PNP 500mV @ 100mA, 2A 80 V
PDTA143EQA147
PDTA143EQA147
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NXP Semiconductors
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2SD1267AP
2SD1267AP
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Panasonic Electronic Components
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 - - - - - - - - 4 A 120 @ 1A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1.5V @ 400mA, 4A 80 V
2SD1271AP
2SD1271AP
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 - - - - - - - - 7 A 130 @ 3A, 2V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 500mV @ 250mA, 5A 100 V
2SD1275AP
2SD1275AP
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Panasonic Electronic Components
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 - - - - - - - - 2 A 4000 @ 2A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN - Darlington 2.5V @ 8mA, 2A 80 V
2SD1276AP
2SD1276AP
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Panasonic Electronic Components
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 - - - - - - - - 4 A 4000 @ 3A, 3V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN - Darlington 4V @ 20mA, 5A 80 V
2SD1277AP
2SD1277AP
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Panasonic Electronic Components
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 - - - - - - - - 8 A 4000 @ 4A, 3V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN - Darlington 1.5V @ 8mA, 4A 80 V
2SD14740P
2SD14740P
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Panasonic Electronic Components
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 - - - - - - - - 6 A 800 @ 1A, 4V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 500mV @ 100mA, 5A 60 V
2SD14990P
2SD14990P
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Panasonic Electronic Components
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 - - - - - - - - 5 A 100 @ 1A, 5V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 2V @ 300mA, 3A 100 V
Showing 17051-17100 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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