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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N4403_D29Z
2N4403_D29Z
On Semiconductor
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 600 mA 100 @ 150mA, 2V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
2N4403_J05Z
2N4403_J05Z
On Semiconductor
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 600 mA 100 @ 150mA, 2V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
2N4403_J18Z
2N4403_J18Z
On Semiconductor
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 600 mA 100 @ 150mA, 2V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
2N4403_J60Z
2N4403_J60Z
On Semiconductor
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 600 mA 100 @ 150mA, 2V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
2N4403_S00Z
2N4403_S00Z
On Semiconductor
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 600 mA 100 @ 150mA, 2V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
STBV68
STBV68
STMicroelectronics
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 600 mA 3 @ 250mA, 10V - Through Hole 150°C (TJ) 900 mW TO-92-3 NPN 5V @ 100mA, 250mA 400 V
2N6427_D26Z
2N6427_D26Z
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 1.2 A 14000 @ 500mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.5V @ 500µA, 500mA 40 V
BC182B_D26Z
BC182B_D26Z
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 100 mA 40 @ 10µA, 5V 150MHz Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 600mV @ 5mA, 100mA 50 V
BC182LA
BC182LA
On Semiconductor
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 100 mA - - Through Hole -55°C ~ 150°C (TJ) - TO-92-3 NPN - 50 V
BC212L_D27Z
BC212L_D27Z
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 300 mA 60 @ 2mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 600mV @ 5mA, 100mA 50 V
BC212L_D75Z
BC212L_D75Z
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 300 mA 60 @ 2mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 600mV @ 5mA, 100mA 50 V
BC214L_D26Z
BC214L_D26Z
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 500 mA 140 @ 2mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 600mV @ 5mA, 100mA 30 V
BC214L_L34Z
BC214L_L34Z
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 500 mA 140 @ 2mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 600mV @ 5mA, 100mA 30 V
BC214LB
BC214LB
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 500 mA 140 @ 2mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 600mV @ 5mA, 100mA 30 V
BC214LB_L34Z
BC214LB_L34Z
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 500 mA 140 @ 2mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 600mV @ 5mA, 100mA 30 V
BC237A
BC237A
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 100 mA 120 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
2SC4414S-AC
2SC4414S-AC
On Semiconductor
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BC635_D26Z
BC635_D26Z
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 45 V
BC635_D27Z
BC635_D27Z
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 45 V
BC637_D26Z
BC637_D26Z
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 60 V
BC637_D27Z
BC637_D27Z
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 60 V
BC637_D75Z
BC637_D75Z
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 60 V
BC637_L34Z
BC637_L34Z
Download Datasheet for BC637_L34Z
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 50mA, 500mA 60 V
BC640_J61Z
BC640_J61Z
Download Datasheet for BC640_J61Z
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 1 A 40 @ 150mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 500mV @ 50mA, 500mA 80 V
BCW71_ND87Z
BCW71_ND87Z
On Semiconductor
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 500 mA 110 @ 2mA, 5V 330MHz Surface Mount -55°C ~ 150°C (TJ) 350 mW SOT-23-3 NPN 250mV @ 500µA, 10mA 45 V
BCX71J_D87Z
BCX71J_D87Z
On Semiconductor
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 100 mA 250 @ 2mA, 5V - Surface Mount - 350 mW SOT-23-3 PNP 550mV @ 1.25mA, 50mA 45 V
BD244-S
BD244-S
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Bourns
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 6 A 15 @ 3A, 4V - Through Hole -65°C ~ 150°C (TJ) 2 W TO-220 PNP 1.5V @ 1A, 6A 45 V
2N3702_D26Z
2N3702_D26Z
Download Datasheet for 2N3702_D26Z
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 500 mA 60 @ 50mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 250mV @ 5mA, 50mA 25 V
2N3702_D27Z
2N3702_D27Z
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 500 mA 60 @ 50mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 250mV @ 5mA, 50mA 25 V
2N3702_D75Z
2N3702_D75Z
Download Datasheet for 2N3702_D75Z
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 500 mA 60 @ 50mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 250mV @ 5mA, 50mA 25 V
2N3703
2N3703
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 500 mA 30 @ 50mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 250mV @ 5mA, 50mA 30 V
2N3905_D29Z
2N3905_D29Z
Download Datasheet for 2N3905_D29Z
On Semiconductor
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 200 mA 50 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 5mA, 50mA 40 V
2N4402_D81Z
2N4402_D81Z
On Semiconductor
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 600 mA 50 @ 150mA, 2V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
2N4402_J14Z
2N4402_J14Z
On Semiconductor
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 600 mA 50 @ 150mA, 2V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
2N4402_S00Z
2N4402_S00Z
On Semiconductor
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 600 mA 50 @ 150mA, 2V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
2N4410_D27Z
2N4410_D27Z
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 200 mA 60 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 200mV @ 100µA, 1mA 80 V
2N4410_D74Z
2N4410_D74Z
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 200 mA 60 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 200mV @ 100µA, 1mA 80 V
2N4410_D75Z
2N4410_D75Z
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 200 mA 60 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 200mV @ 100µA, 1mA 80 V
ZTX717
ZTX717
Diodes Incorporated
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 3 A - - Through Hole - - E-Line (TO-92 compatible) PNP - 12 V
BC184LC_D27Z
BC184LC_D27Z
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 200 mA 130 @ 100mA, 5V 150MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC184LC_L34Z
BC184LC_L34Z
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 200 mA 130 @ 100mA, 5V 150MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC212B_D26Z
BC212B_D26Z
Download Datasheet for BC212B_D26Z
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 100 mA 60 @ 2mA, 5V - Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 PNP 600mV @ 5mA, 100mA 50 V
BC212B_D27Z
BC212B_D27Z
Download Datasheet for BC212B_D27Z
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 100 mA 60 @ 2mA, 5V - Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 PNP 600mV @ 5mA, 100mA 50 V
BC213L_D27Z
BC213L_D27Z
Download Datasheet for BC213L_D27Z
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 500 mA 80 @ 2mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 600mV @ 5mA, 100mA 30 V
BC214LC
BC214LC
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 500 mA 140 @ 2mA, 5V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 600mV @ 5mA, 100mA 30 V
BC238
BC238
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On Semiconductor
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 100 mA 120 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BC516_D74Z
BC516_D74Z
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 1 A 30000 @ 20mA, 2V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1V @ 100µA, 100mA 30 V
BC546_J18Z
BC546_J18Z
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 65 V
2N3904_D27ZS00Z
2N3904_D27ZS00Z
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 200 mA 100 @ 10mA, 1V 300MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 5mA, 50mA 40 V
2N5210_D81Z
2N5210_D81Z
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 100 mA 200 @ 100µA, 5V 30MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 700mV @ 1mA, 10mA 50 V
Showing 16951-17000 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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