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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSA709CYTA
KSA709CYTA
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 700 mA 120 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSD1020GBU
KSD1020GBU
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 700 mA 200 @ 100mA, 1V 170MHz Through Hole 150°C (TJ) 350 mW TO-92S NPN 400mV @ 70mA, 700mA 25 V
KSD1020YTA
KSD1020YTA
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 700 mA 120 @ 100mA, 1V 170MHz Through Hole 150°C (TJ) 350 mW TO-92S NPN 400mV @ 70mA, 700mA 25 V
KSA709COBU
KSA709COBU
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSP62TA
KSP62TA
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 500 mA 20000 @ 10mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1V @ 10µA, 10mA 20 V
FJX945YTF
FJX945YTF
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 150 mA 120 @ 1mA, 6V 300MHz Surface Mount 150°C (TJ) 200 mW SOT-323 NPN 300mV @ 10mA, 100mA 50 V
KSP94BU
KSP94BU
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 300 mA 50 @ 10mA, 10V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 5mA, 50mA 400 V
KSA1150OTA
KSA1150OTA
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 500 mA 70 @ 100mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S PNP 400mV @ 50mA, 500mA 20 V
BD244B-S
BD244B-S
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Bourns
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 6 A 15 @ 3A, 4V - Through Hole -65°C ~ 150°C (TJ) 2 W TO-220 PNP 1.5V @ 1A, 6A 80 V
KSP63BU
KSP63BU
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 30 V
KSP62TF
KSP62TF
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 500 mA 20000 @ 10mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1V @ 10µA, 10mA 20 V
KSP63TA
KSP63TA
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 30 V
KSD261GTA
KSD261GTA
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 500 mA 200 @ 100mA, 1V - Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 400mV @ 50mA, 500mA 20 V
KSD261YTA
KSD261YTA
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 500 mA 120 @ 100mA, 1V - Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 400mV @ 50mA, 500mA 20 V
KSB811OBU
KSB811OBU
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 1 A 70 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 500mV @ 100mA, 1A 25 V
KSB811YBU
KSB811YBU
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 1 A 120 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 500mV @ 100mA, 1A 25 V
KSB811GBU
KSB811GBU
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 1 A 200 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 500mV @ 100mA, 1A 25 V
KSB811GTA
KSB811GTA
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 1 A 200 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 500mV @ 100mA, 1A 25 V
KSB811OTA
KSB811OTA
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 1 A 70 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 500mV @ 100mA, 1A 25 V
KSP05BU
KSP05BU
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 500 mA 50 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 10mA, 100mA 60 V
2SC5964-S-TD-H
2SC5964-S-TD-H
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 3 A 200 @ 100mA, 2V 380MHz Surface Mount - 1.3 W PCP NPN 290mV @ 100mA, 2A 50 V
KSB1116LBU
KSB1116LBU
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 1 A 300 @ 100mA, 2V 120MHz Through Hole 150°C (TJ) 750 mW TO-92-3 PNP 300mV @ 50mA, 1A 50 V
KSB1116AYBU
KSB1116AYBU
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 1 A 135 @ 100mA, 2V 120MHz Through Hole 150°C (TJ) 750 mW TO-92-3 PNP 300mV @ 50mA, 1A 60 V
KSB1116GBU
KSB1116GBU
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 1 A 200 @ 100mA, 2V 120MHz Through Hole 150°C (TJ) 750 mW TO-92-3 PNP 300mV @ 50mA, 1A 50 V
KSB1116ALBU
KSB1116ALBU
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 1 A 300 @ 100mA, 2V 120MHz Through Hole 150°C (TJ) 750 mW TO-92-3 PNP 300mV @ 50mA, 1A 60 V
KSB1116LTA
KSB1116LTA
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 1 A 300 @ 100mA, 2V 120MHz Through Hole 150°C (TJ) 750 mW TO-92-3 PNP 300mV @ 50mA, 1A 50 V
MMBT4356
MMBT4356
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 800 mA 50 @ 10mA, 10V - Surface Mount -55°C ~ 150°C (TJ) 350 mW SOT-23-3 PNP 500mV @ 50mA, 500mA 80 V
KSC5019MBU
KSC5019MBU
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 2 A 200 @ 500mA, 1V 150MHz Through Hole 150°C (TJ) 750 mW TO-92-3 NPN 500mV @ 50mA, 2A 10 V
KSD1616YBU
KSD1616YBU
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 1 A 135 @ 100mA, 2V 160MHz Through Hole 150°C (TJ) 750 mW TO-92-3 NPN 300mV @ 50mA, 1A 50 V
KSD1616LPWD
KSD1616LPWD
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 1 A 300 @ 100mA, 2V 160MHz Through Hole 150°C (TJ) 750 mW TO-92-3 NPN 300mV @ 50mA, 1A 50 V
KSD1616AYBU
KSD1616AYBU
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 1 A 135 @ 100mA, 2V 160MHz Through Hole 150°C (TJ) 750 mW TO-92-3 NPN 300mV @ 50mA, 1A 60 V
KSA733YIUTA
KSA733YIUTA
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 150 mA 120 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92-3 PNP 300mV @ 10mA, 100mA 50 V
MMBT3906HLT1G
MMBT3906HLT1G
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KSC2331OBU
KSC2331OBU
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 700mV @ 50mA, 500mA 60 V
KSC2310OBU
KSC2310OBU
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 50 mA 70 @ 10mA, 5V 100MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 500mV @ 1mA, 10mA 150 V
KSC2310RBU
KSC2310RBU
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 50 mA 40 @ 10mA, 5V 100MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 500mV @ 1mA, 10mA 150 V
KSC2310YNBU
KSC2310YNBU
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 50 mA 120 @ 10mA, 5V 100MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 500mV @ 1mA, 10mA 150 V
KSC2310OTA
KSC2310OTA
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 50 mA 70 @ 10mA, 5V 100MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 500mV @ 1mA, 10mA 150 V
KSA1378GBU
KSA1378GBU
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 300 mA 200 @ 50mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S PNP 600mV @ 30mA, 300mA 25 V
KSA931OTA
KSA931OTA
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 700 mA 70 @ 50mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 700mV @ 50mA, 500mA 60 V
KSA910OBU
KSA910OBU
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 50 mA 70 @ 10mA, 5V 100MHz Through Hole - 800 mW TO-92-3 PNP 800mV @ 1mA, 10mA 150 V
KSA931OBU
KSA931OBU
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 700 mA 70 @ 50mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 700mV @ 50mA, 500mA 60 V
KSA931YBU
KSA931YBU
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 700 mA 120 @ 50mA, 2V 100MHz Through Hole 150°C (TJ) 1 W TO-92-3 PNP 700mV @ 50mA, 500mA 60 V
KSA910YTA
KSA910YTA
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 50 mA 120 @ 10mA, 5V 100MHz Through Hole - 800 mW TO-92-3 PNP 800mV @ 1mA, 10mA 150 V
KSC2330ABU
KSC2330ABU
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 100 mA 40 @ 20mA, 10V 50MHz Through Hole 150°C (TJ) 1 W TO-92-3 NPN 500mV @ 1mA, 10mA 400 V
FJZ733LTF
FJZ733LTF
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 150 mA 350 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 100 mW SOT-623F PNP 300mV @ 10mA, 100mA 50 V
FJZ945OTF
FJZ945OTF
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 150 mA 70 @ 1mA, 6V 300MHz Surface Mount 150°C (TJ) 100 mW SOT-623F NPN 300mV @ 10mA, 100mA 50 V
FJZ945YTF
FJZ945YTF
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 150 mA 120 @ 1mA, 6V 300MHz Surface Mount 150°C (TJ) 100 mW SOT-623F NPN 300mV @ 10mA, 100mA 50 V
FJZ733OTF
FJZ733OTF
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 150 mA 70 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 100 mW SOT-623F PNP 300mV @ 10mA, 100mA 50 V
FJZ945GTF
FJZ945GTF
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 150 mA 200 @ 1mA, 6V 300MHz Surface Mount 150°C (TJ) 100 mW SOT-623F NPN 300mV @ 10mA, 100mA 50 V
Showing 17101-17150 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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