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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSC815OTA
KSC815OTA
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 200 mA 70 @ 50mA, 1V 200MHz Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 400mV @ 15mA, 150mA 45 V
KSC1845FBU
KSC1845FBU
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 50 mA 300 @ 1mA, 6V 110MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 300mV @ 1mA, 10mA 120 V
KSC1845EBU
KSC1845EBU
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 50 mA 400 @ 1mA, 6V 110MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 300mV @ 1mA, 10mA 120 V
KSC1845UBU
KSC1845UBU
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 50 mA 600 @ 1mA, 6V 110MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 300mV @ 1mA, 10mA 120 V
KSC1845PBU
KSC1845PBU
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 50 mA 200 @ 1mA, 6V 110MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 300mV @ 1mA, 10mA 120 V
KSD227GTA
KSD227GTA
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 300 mA 200 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 400mV @ 30mA, 300mA 25 V
KSC815CYBU
KSC815CYBU
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 200 mA 120 @ 50mA, 1V 200MHz Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 400mV @ 15mA, 150mA 45 V
KSA642OTA
KSA642OTA
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 300 mA 70 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 PNP 600mV @ 30mA, 300mA 25 V
KSC815OBU
KSC815OBU
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 200 mA 70 @ 50mA, 1V 200MHz Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 400mV @ 15mA, 150mA 45 V
KSA642CYBU
KSA642CYBU
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 300 mA 120 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 PNP 600mV @ 30mA, 300mA 25 V
KSC838OBU
KSC838OBU
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 30 mA 70 @ 2mA, 12V 250MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 400mV @ 1mA, 10mA 30 V
KSD882OS
KSD882OS
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 3 A 100 @ 1A, 2V 90MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-126-3 NPN 500mV @ 200mA, 2A 30 V
PN2907TA
PN2907TA
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 800 mA 100 @ 150mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 1.6V @ 50mA, 500mA 40 V
KSA539OTA
KSA539OTA
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 200 mA 70 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 PNP 500mV @ 15mA, 150mA 45 V
PN2907ANLBU
PN2907ANLBU
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 800 mA 100 @ 150mA, 10V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 1.6V @ 50mA, 500mA 60 V
KSP27BU
KSP27BU
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.5V @ 100µA, 100mA 60 V
KSC2859YMTF
KSC2859YMTF
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 500 mA 120 @ 100mA, 1V 300MHz Surface Mount 150°C (TJ) 150 mW SOT-23-3 NPN 250mV @ 10mA, 100mA 30 V
KSC3488GBU
KSC3488GBU
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 300 mA 200 @ 50mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S NPN 400mV @ 30mA, 300mA 25 V
KSP14BU
KSP14BU
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 500 mA 20000 @ 100mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.5V @ 100µA, 100mA 30 V
FJV1845UMTF
FJV1845UMTF
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 50 mA 600 @ 1mA, 6V 110MHz Surface Mount 150°C (TJ) 300 mW SOT-23-3 NPN 300mV @ 1mA, 10mA 120 V
KSA1175YTA
KSA1175YTA
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 150 mA 120 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92S PNP 300mV @ 10mA, 100mA 50 V
KSC3488OBU
KSC3488OBU
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 300 mA 70 @ 50mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S NPN 400mV @ 30mA, 300mA 25 V
KSC3488GTA
KSC3488GTA
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 300 mA 200 @ 50mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S NPN 400mV @ 30mA, 300mA 25 V
MJE701STU
MJE701STU
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 4 A 750 @ 2A, 3V - Through Hole 150°C (TJ) 40 W TO-126-3 PNP - Darlington 2.8V @ 40mA, 2A 60 V
KSA1175OBU
KSA1175OBU
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 150 mA 70 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92S PNP 300mV @ 10mA, 100mA 50 V
KSA1175LTA
KSA1175LTA
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 150 mA 350 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92S PNP 300mV @ 10mA, 100mA 50 V
KSC1009YBU
KSC1009YBU
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 700 mA 120 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 700mV @ 20mA, 200mA 140 V
KSP26BU
KSP26BU
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.5V @ 100µA, 100mA 50 V
KSC1009OTA
KSC1009OTA
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 700mV @ 20mA, 200mA 140 V
KSC1009OBU
KSC1009OBU
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 700mV @ 20mA, 200mA 140 V
MMBT3416
MMBT3416
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 500 mA - - Surface Mount - 350 mW SOT-23-3 NPN - 50 V
KSC1009CYTA
KSC1009CYTA
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 700 mA 120 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 700mV @ 20mA, 200mA 140 V
KSC2001OBU
KSC2001OBU
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 700 mA 90 @ 100mA, 1V 170MHz Through Hole 150°C (TJ) 600 mW TO-92-3 NPN 600mV @ 70mA, 700mA 25 V
KSA1175GTA
KSA1175GTA
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 150 mA 200 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92S PNP 300mV @ 10mA, 100mA 50 V
JAN2N1016C
JAN2N1016C
Microsemi Corporation
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 7.5 A 10 @ 5A, 4V - - -65°C ~ 150°C (TJ) 150 W TO-82 NPN 2.5V @ 1A, 5A 150 V
KSC900CYTA
KSC900CYTA
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 50 mA 120 @ 500µA, 3V 100MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 200mV @ 2mA, 20mA 25 V
KSA1174FTA
KSA1174FTA
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 50 mA 300 @ 1mA, 6V 100MHz Through Hole 150°C (TJ) 300 mW TO-92S PNP 300mV @ 1mA, 10mA 120 V
KSA1174FBU
KSA1174FBU
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 50 mA 300 @ 1mA, 6V 100MHz Through Hole 150°C (TJ) 300 mW TO-92S PNP 300mV @ 1mA, 10mA 120 V
KSA1378YBU
KSA1378YBU
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 300 mA 120 @ 50mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S PNP 600mV @ 30mA, 300mA 25 V
KSC2784FBU
KSC2784FBU
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 50 mA 300 @ 1mA, 6V 110MHz Through Hole 150°C (TJ) 300 mW TO-92S NPN 300mV @ 1mA, 10mA 120 V
KSA1174PTA
KSA1174PTA
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 50 mA 200 @ 1mA, 6V 100MHz Through Hole 150°C (TJ) 300 mW TO-92S PNP 300mV @ 1mA, 10mA 120 V
KS3302TA
KS3302TA
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 200 mA - - Through Hole - - TO-92-3 NPN 150mV @ 10mA, 100mA 40 V
KSC2784FTA
KSC2784FTA
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 50 mA 300 @ 1mA, 6V 110MHz Through Hole 150°C (TJ) 300 mW TO-92S NPN 300mV @ 1mA, 10mA 120 V
KSC2784PBU
KSC2784PBU
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 50 mA 200 @ 1mA, 6V 110MHz Through Hole 150°C (TJ) 300 mW TO-92S NPN 300mV @ 1mA, 10mA 120 V
KSC2785GBU
KSC2785GBU
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 150 mA 200 @ 1mA, 6V 300MHz Through Hole 150°C (TJ) 250 mW TO-92S NPN 300mV @ 10mA, 100mA 50 V
KSC2785LTA
KSC2785LTA
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 150 mA 350 @ 1mA, 6V 300MHz Through Hole 150°C (TJ) 250 mW TO-92S NPN 300mV @ 10mA, 100mA 50 V
KSA1174PBU
KSA1174PBU
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 50 mA 200 @ 1mA, 6V 100MHz Through Hole 150°C (TJ) 300 mW TO-92S PNP 300mV @ 1mA, 10mA 120 V
KSP77BU
KSP77BU
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 60 V
KSP75BU
KSP75BU
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 40 V
KSC2787RTA
KSC2787RTA
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 50 mA 40 @ 1mA, 6V 300MHz Through Hole 150°C (TJ) 250 mW TO-92S NPN 300mV @ 1mA, 10mA 30 V
Showing 17151-17200 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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