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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC547CTAR
BC547CTAR
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BC548ATFR
BC548ATFR
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC548BTAR
BC548BTAR
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BC548BTF
BC548BTF
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BC548BTFR
BC548BTFR
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BC548CTFR
BC548CTFR
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BC55-16PAS115
BC55-16PAS115
NXP Semiconductors
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BC549BTAR
BC549BTAR
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BC549BTFR
BC549BTFR
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BC549CTFR
BC549CTFR
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC550B
BC550B
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC550BTAR
BC550BTAR
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC556BTAR
BC556BTAR
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 65 V
BC557B_J18Z
BC557B_J18Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
BC558BTAR
BC558BTAR
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC558BTFR
BC558BTFR
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
2SC3750M-CC7
2SC3750M-CC7
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BC559BTAR
BC559BTAR
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC560CTAR
BC560CTAR
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
BC635_D75Z
BC635_D75Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 45 V
BC635_L34Z
BC635_L34Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 45 V
BC636TAR
BC636TAR
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - PNP 500mV @ 50mA, 500mA 45 V
BC638TFR
BC638TFR
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - PNP 500mV @ 50mA, 500mA 60 V
BC639_L34Z
BC639_L34Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BC63916
BC63916
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BC63916_D26Z
BC63916_D26Z
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BC640TAR
BC640TAR
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - PNP 500mV @ 50mA, 500mA 80 V
BD243CTU
BD243CTU
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - - - - Through Hole 150°C (TJ) 65 W - - TO-220-3 - NPN 1.5V @ 1A, 6A 100 V
BC640TFR
BC640TFR
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - PNP 500mV @ 50mA, 500mA 80 V
BDW93CFTU
BDW93CFTU
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 - - - - - - - - 12 A 750 @ 5A, 3V - - - - - - Through Hole 150°C (TJ) 80 W - - TO-220-3 - NPN - Darlington 3V @ 100mA, 10A 100 V
BSR18A_D87Z
BSR18A_D87Z
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - PNP 400mV @ 5mA, 50mA 40 V
BSR50_D74Z
BSR50_D74Z
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 - - - - - - - - 1.5 A 2000 @ 500mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.6V @ 4mA, 1A 45 V
2N7052_D74Z
2N7052_D74Z
On Semiconductor
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 - - - - - - - - 1.5 A 1000 @ 1A, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.5V @ 100µA, 100mA 100 V
BC639_D74Z
BC639_D74Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BC639_D75Z
BC639_D75Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BDW93A
BDW93A
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 - - - - - - - - 12 A 750 @ 5A, 3V - - - - - - Through Hole 150°C (TJ) 80 W - - TO-220-3 - NPN - Darlington 3V @ 100mA, 10A 60 V
BC68PAS115
BC68PAS115
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NXP Semiconductors
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BU407
BU407
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 - - - - - - - - 7 A - - - - 10MHz - - Through Hole 150°C (TJ) 60 W - - TO-220-3 - NPN 1V @ 500mA, 5A 150 V
BU407TU
BU407TU
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 - - - - - - - - 7 A - - - - 10MHz - - Through Hole 150°C (TJ) 60 W - - TO-220-3 - NPN 1V @ 500mA, 5A 150 V
2N5551_J05Z
2N5551_J05Z
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 160 V
2N7053_D26Z
2N7053_D26Z
On Semiconductor
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 - - - - - - - - 1.5 A 1000 @ 1A, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN - Darlington 1.5V @ 100µA, 100mA 100 V
2N7053_D75Z
2N7053_D75Z
On Semiconductor
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 - - - - - - - - 1.5 A 1000 @ 1A, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN - Darlington 1.5V @ 100µA, 100mA 100 V
BC33716TF
BC33716TF
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
BC639_D26Z
BC639_D26Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BC639_D27Z
BC639_D27Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BC639_D81Z
BC639_D81Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BCV27_D87Z
BCV27_D87Z
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 - - - - - - - - 1.2 A 20000 @ 100mA, 5V - - - 220MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN - Darlington 1V @ 100µA, 100mA 30 V
2N5210NMBU
2N5210NMBU
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 - - - - - - - - 100 mA 200 @ 100µA, 5V - - - 30MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 1mA, 10mA 50 V
2N5210TAR
2N5210TAR
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 - - - - - - - - 100 mA 200 @ 100µA, 5V - - - 30MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 1mA, 10mA 50 V
2N6428ABU
2N6428ABU
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 - - - - - - - - 200 mA 250 @ 100µA, 5V - - - 700MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
Showing 17151-17200 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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