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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
PBSS4240XF
PBSS4240XF
Download Datasheet for PBSS4240XF
NXP Semiconductors
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 - - - - - - - - 2 A 300 @ 500mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 140mV @ 50mA, 500mA 40 V
PBSS4230T,215
PBSS4230T,215
NXP Semiconductors
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 - - - - - - - - 2 A 300 @ 1A, 2V - - - 230MHz - - Surface Mount 150°C (TJ) 480 mW - - TO-236AB - NPN 320mV @ 200mA, 2A 30 V
PEMB2,115
PEMB2,115
NXP Semiconductors
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PEMH18,115
PEMH18,115
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NXP Semiconductors
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PMBT2222,215
PMBT2222,215
Download Datasheet for PMBT2222,215
NXP Semiconductors
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 250MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 1.6V @ 50mA, 500mA 30 V
PDTB143XT215
PDTB143XT215
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Nexperia USA Inc.
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FMB100
FMB100
On Semiconductor
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 - - - - - - - - 500 mA 100 @ 150mA, 5V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 700 mW - - SuperSOT™-6 - NPN 400mV @ 20mA, 200mA 45 V
PMP5201V/S711115
PMP5201V/S711115
NXP Semiconductors
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2SB886
2SB886
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Sanyo Denki
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U2861B-MFPG3Y
U2861B-MFPG3Y
Atmel
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2SC4636LS
2SC4636LS
Sanyo Denki
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2N549
2N549
Vishay Dale
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2N3791
2N3791
Solid State Devices Inc (SSDI)
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 - - - - - - - - 10 A 50 @ 1A, 2V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-3 - PNP 1V @ 500mA, 5A 60 V
FJAF6810TU
FJAF6810TU
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On Semiconductor
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 - - - - - - - - 10 A 5 @ 6A, 5V - - - - - - Through Hole 150°C (TJ) 60 W - - TO-3PF - NPN 3V @ 1.5A, 6A 750 V
2SC5242RTU
2SC5242RTU
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On Semiconductor
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 - - - - - - - - 17 A 55 @ 1A, 5V - - - 30MHz - - Through Hole -55°C ~ 150°C (TJ) 130 W - - TO-3P - NPN 3V @ 800mA, 8A 250 V
NTE2696
NTE2696
NTE Electronics
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 - - - - - - - - 100 mA 350 @ 2mA, 6V - - - 100MHz - - Through Hole 125°C (TJ) 300 mW - - TO-92 - NPN 300mV @ 1mA, 10mA 120 V
HGT1S14N41G3VLT
HGT1S14N41G3VLT
On Semiconductor
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2N3441
2N3441
Solid State Devices Inc (SSDI)
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 - - - - - - - - 3 A 25 @ 500mA, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 25 W - - TO-66 - NPN 6V @ 900mA, 2.7A 140 V
NTE2648
NTE2648
NTE Electronics
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220 Full Pack - NPN 1.5V @ 50mA, 500mA 230 V
2N2222A
2N2222A
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Good-Ark Semiconductor
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PMD12K100
PMD12K100
Solid State Devices Inc (SSDI)
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 - - - - - - - - 8 A - - - - - - - Through Hole - - - - TO-3 - NPN - Darlington - 100 V
PMD11K100
PMD11K100
Solid State Devices Inc (SSDI)
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 - - - - - - - - 12 A - - - - - - - Through Hole - - - - TO-3 - PNP - Darlington - 100 V
PMD11K80
PMD11K80
Solid State Devices Inc (SSDI)
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 - - - - - - - - 12 A - - - - - - - Through Hole - - - - TO-3 - PNP - Darlington - 80 V
PMD10K80
PMD10K80
Solid State Devices Inc (SSDI)
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 - - - - - - - - 12 A - - - - - - - Through Hole - - - - TO-3 - NPN - Darlington - 80 V
2N4240
2N4240
Solid State Devices Inc (SSDI)
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 - - - - - - - - 2 A 30 @ 750mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 35 W - - TO-66 - NPN 1V @ 75mA, 750mA 300 V
FJAFS1510ATU
FJAFS1510ATU
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On Semiconductor
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 - - - - - - - - 6 A 7 @ 3A, 5V - - - 15.4MHz - - Through Hole -55°C ~ 125°C (TJ) 60 W - - TO-3PF - NPN 500mV @ 1.5A, 6A 750 V
NTE2699
NTE2699
NTE Electronics
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 - - - - - - - - 15 A 150 @ 3A, 2V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220 - NPN 500mV @ 600mA, 12A 60 V
NTE2701
NTE2701
NTE Electronics
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 - - - - - - - - 15 A 150 @ 3A, 2V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220 - PNP 500mV @ 600mA, 12A 60 V
2N5239
2N5239
Solid State Devices Inc (SSDI)
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 - - - - - - - - 5 A 20 @ 2A, 10V - - - 2MHz - - Through Hole 200°C (TJ) 100 W - - TO-3 - NPN 5V @ 1.125A, 4.5A 225 V
2N5240
2N5240
Solid State Devices Inc (SSDI)
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 - - - - - - - - 5 A 20 @ 2A, 10V - - - 2MHz - - Through Hole -65°C ~ 200°C (TJ) 100 W - - TO-3 - NPN 5V @ 1.125A, 4.5A 300 V
2N3773
2N3773
Solid State Devices Inc (SSDI)
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 - - - - - - - - 16 A 15 @ 8A, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-3 - NPN 4V @ 3.2A, 16A 140 V
2N6049
2N6049
Solid State Devices Inc (SSDI)
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 - - - - - - - - 4 A 25 @ 500mA, 4V - - - 3MHz - - Through Hole 200°C (TJ) 75 W - - TO-66 - PNP 2V @ 800mA, 4A 55 V
HFA1212IP
HFA1212IP
Harris Semiconductor
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2N6052
2N6052
Solid State Devices Inc (SSDI)
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 - - - - - - - - 12 A - - - - - - - Through Hole - - - - TO-3 - PNP - Darlington - 100 V
2N5038
2N5038
Solid State Devices Inc (SSDI)
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-3 - NPN - -
FJL4215OTU
FJL4215OTU
On Semiconductor
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 - - - - - - - - 17 A 80 @ 1A, 5V - - - 30MHz - - Through Hole -50°C ~ 150°C (TJ) 150 W - - HPM F2 - PNP 3V @ 800mA, 8A 250 V
PMD17K80
PMD17K80
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A - - - - - - - Through Hole - - - - TO-3 - PNP - Darlington - 80 V
PMD17K60
PMD17K60
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A 800 @ 10A, 3V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 200 W - - TO-3 - PNP - Darlington 2V @ 40mA, 10A 60 V
PMD13K80
PMD13K80
Solid State Devices Inc (SSDI)
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 - - - - - - - - 8 A - - - - - - - Through Hole - - - - TO-3 - PNP - Darlington - 80 V
PMD13K100
PMD13K100
Solid State Devices Inc (SSDI)
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 - - - - - - - - 12 A - - - - - - - Through Hole - - - - TO-3 - PNP - Darlington - 80 V
PMD17K40
PMD17K40
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A 800 @ 10A, 3V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 200 W - - TO-3 - PNP - Darlington 2V @ 40mA, 10A 40 V
PMD16K80
PMD16K80
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A - - - - - - - Through Hole - - - - TO-3 - NPN - Darlington - 80 V
NTE2697
NTE2697
NTE Electronics
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 - - - - - - - - 7 A 100 @ 3A, 4V - - - - - - Through Hole 150°C (TJ) 50 W - - TO-220 - NPN 500mV @ 300mA, 3A 120 V
HFA1115IP
HFA1115IP
Harris Semiconductor
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HC4P5502B-5
HC4P5502B-5
Harris Semiconductor
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MJ15023
MJ15023
Solid State Devices Inc (SSDI)
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 - - - - - - - - 16 A 15 @ 8A, 4V - - - 4MHz - - Through Hole 150°C (TJ) 250 W - - TO-3 - PNP 4V @ 3.2A, 16A 200 V
MJ15004
MJ15004
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A 25 @ 5A, 2V - - - 2MHz - - Through Hole -65°C ~ 200°C (TJ) 250 W - - TO-3 - PNP 1V @ 500mA, 5A 140 V
MJ15022
MJ15022
Solid State Devices Inc (SSDI)
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 - - - - - - - - 16 A 15 @ 8A, 4V - - - 4MHz - - Through Hole 150°C (TJ) 250 W - - TO-3 - NPN 4V @ 3.2A, 16A 200 V
MJ15003
MJ15003
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A 25 @ 5A, 2V - - - 2MHz - - Through Hole -65°C ~ 200°C (TJ) 250 W - - TO-3 - NPN 1V @ 500mA, 5A 140 V
UC3838Q
UC3838Q
Texas Instruments
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Showing 17301-17350 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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