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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MPSA55_D75Z
MPSA55_D75Z
On Semiconductor
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 500 mA 100 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 250mV @ 10mA, 100mA 60 V
MPSA56_D26Z
MPSA56_D26Z
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On Semiconductor
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 500 mA 100 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 200mV @ 10mA, 100mA 80 V
MPSA56_D27Z
MPSA56_D27Z
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On Semiconductor
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 500 mA 100 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 200mV @ 10mA, 100mA 80 V
PDTB113EU135
PDTB113EU135
Download Datasheet for PDTB113EU135
NXP Semiconductors
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MPSA65_D75Z
MPSA65_D75Z
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On Semiconductor
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 1.2 A 20000 @ 100mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSA77_D26Z
MPSA77_D26Z
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On Semiconductor
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 1.2 A 10000 @ 100mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 60 V
MPSA77_D74Z
MPSA77_D74Z
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On Semiconductor
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 1.2 A 10000 @ 100mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 60 V
MPSA77_D75Z
MPSA77_D75Z
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On Semiconductor
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 1.2 A 10000 @ 100mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 60 V
MPSA92_D26Z
MPSA92_D26Z
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On Semiconductor
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 500 mA 25 @ 30mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 2mA, 20mA 300 V
MPSA92_D27Z
MPSA92_D27Z
Download Datasheet for MPSA92_D27Z
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 500 mA 25 @ 30mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 2mA, 20mA 300 V
MPSA92_D74Z
MPSA92_D74Z
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On Semiconductor
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 500 mA 25 @ 30mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 2mA, 20mA 300 V
MPSA92_D75Z
MPSA92_D75Z
Download Datasheet for MPSA92_D75Z
On Semiconductor
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 500 mA 25 @ 30mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 2mA, 20mA 300 V
MPSA92_D81Z
MPSA92_D81Z
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 500 mA 25 @ 30mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 2mA, 20mA 300 V
MPSA92_J22Z
MPSA92_J22Z
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On Semiconductor
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 500 mA 25 @ 30mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 2mA, 20mA 300 V
MPSA93_D26Z
MPSA93_D26Z
Download Datasheet for MPSA93_D26Z
On Semiconductor
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 500 mA 30 @ 30mA, 10V 50MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 2mA, 20mA 200 V
MPSA93_D27Z
MPSA93_D27Z
Download Datasheet for MPSA93_D27Z
On Semiconductor
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 500 mA 30 @ 30mA, 10V 50MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 2mA, 20mA 200 V
MPSA93_D74Z
MPSA93_D74Z
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On Semiconductor
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 500 mA 30 @ 30mA, 10V 50MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 2mA, 20mA 200 V
MPSH24_D26Z
MPSH24_D26Z
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On Semiconductor
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 50 mA 30 @ 8mA, 10V 400MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - 30 V
MPSH34_D26Z
MPSH34_D26Z
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On Semiconductor
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 50 mA 15 @ 20mA, 2V 500MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 500mV @ 2mA, 7mA 40 V
MPSH34_D75Z
MPSH34_D75Z
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On Semiconductor
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 50 mA 15 @ 20mA, 2V 500MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 500mV @ 2mA, 7mA 40 V
MPSL01_D26Z
MPSL01_D26Z
Download Datasheet for MPSL01_D26Z
On Semiconductor
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 200 mA 50 @ 10mA, 5V 60MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 5mA, 50mA 120 V
MPSL01_D27Z
MPSL01_D27Z
Download Datasheet for MPSL01_D27Z
On Semiconductor
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 200 mA 50 @ 10mA, 5V 60MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 5mA, 50mA 120 V
MPSL51_D26Z
MPSL51_D26Z
Download Datasheet for MPSL51_D26Z
On Semiconductor
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 200 mA 40 @ 50mA, 5V 60MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 300mV @ 5mA, 50mA 100 V
MPSL51_D27Z
MPSL51_D27Z
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On Semiconductor
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 200 mA 40 @ 50mA, 5V 60MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 300mV @ 5mA, 50mA 100 V
MPSL51_D75Z
MPSL51_D75Z
Download Datasheet for MPSL51_D75Z
On Semiconductor
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 200 mA 40 @ 50mA, 5V 60MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 300mV @ 5mA, 50mA 100 V
PN100A_D26Z
PN100A_D26Z
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 500 mA 300 @ 10mA, 1V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 400mV @ 20mA, 200mA 45 V
2SC5551F-TD-E
2SC5551F-TD-E
On Semiconductor
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PN200_D26Z
PN200_D26Z
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 500 mA 100 @ 150mA, 1V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 20mA, 200mA 45 V
PN200_D27Z
PN200_D27Z
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 500 mA 100 @ 150mA, 1V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 20mA, 200mA 45 V
PN200_D74Z
PN200_D74Z
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On Semiconductor
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 500 mA 100 @ 150mA, 1V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 20mA, 200mA 45 V
PN200_D75Z
PN200_D75Z
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 500 mA 100 @ 150mA, 1V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 20mA, 200mA 45 V
PN2222A_D81Z
PN2222A_D81Z
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 1 A 100 @ 150mA, 10V 300MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 1V @ 50mA, 500mA 40 V
PN2222A_J05Z
PN2222A_J05Z
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 1 A 100 @ 150mA, 10V 300MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 1V @ 50mA, 500mA 40 V
PN2222A_J18Z
PN2222A_J18Z
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On Semiconductor
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 1 A 100 @ 150mA, 10V 300MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 1V @ 50mA, 500mA 40 V
PN2222A_J61Z
PN2222A_J61Z
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 1 A 100 @ 150mA, 10V 300MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 1V @ 50mA, 500mA 40 V
PN2222_J18Z
PN2222_J18Z
On Semiconductor
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 600 mA 100 @ 150mA, 10V 300MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 1V @ 50mA, 500mA 30 V
PN2222_J61Z
PN2222_J61Z
On Semiconductor
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 600 mA 100 @ 150mA, 10V 300MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 1V @ 50mA, 500mA 30 V
PN2369A_D26Z
PN2369A_D26Z
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 200 mA 40 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 500mV @ 10mA, 100mA 15 V
PDTB113ZU135
PDTB113ZU135
Download Datasheet for PDTB113ZU135
NXP Semiconductors
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PN2907A_J18Z
PN2907A_J18Z
On Semiconductor
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 800 mA 100 @ 150mA, 10V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 1.6V @ 50mA, 500mA 60 V
PN2907A_J61Z
PN2907A_J61Z
On Semiconductor
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 800 mA 100 @ 150mA, 10V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 1.6V @ 50mA, 500mA 60 V
PN3565_D26Z
PN3565_D26Z
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 500 mA 150 @ 1mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 350mV @ 100µA, 1mA 25 V
PN3565_D27Z
PN3565_D27Z
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 500 mA 150 @ 1mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 350mV @ 100µA, 1mA 25 V
PN3565_D75Z
PN3565_D75Z
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 500 mA 150 @ 1mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 350mV @ 100µA, 1mA 25 V
PN3566_D26Z
PN3566_D26Z
On Semiconductor
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 600 mA 150 @ 10mA, 10V - Through Hole - 625 mW TO-92-3 NPN 1V @ 10mA, 100mA 30 V
PN3566_D75Z
PN3566_D75Z
On Semiconductor
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 600 mA 150 @ 10mA, 10V - Through Hole - 625 mW TO-92-3 NPN 1V @ 10mA, 100mA 30 V
PN3567_D26Z
PN3567_D26Z
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 600 mA 40 @ 150mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 15mA, 150mA 40 V
PN3567_D27Z
PN3567_D27Z
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 600 mA 40 @ 150mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 15mA, 150mA 40 V
PN3568_D26Z
PN3568_D26Z
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 1 A 40 @ 150mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 15mA, 150mA 60 V
PN3568_D27Z
PN3568_D27Z
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 1 A 40 @ 150mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 15mA, 150mA 60 V
Showing 17401-17450 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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