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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MPSA92_D75Z
MPSA92_D75Z
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On Semiconductor
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 2mA, 20mA 300 V
MPSA92_D81Z
MPSA92_D81Z
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 2mA, 20mA 300 V
MPSA92_J22Z
MPSA92_J22Z
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 2mA, 20mA 300 V
MPSA93_D26Z
MPSA93_D26Z
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 - - - - - - - - 500 mA 30 @ 30mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 2mA, 20mA 200 V
MPSA93_D27Z
MPSA93_D27Z
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MPSA93_D74Z
MPSA93_D74Z
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 - - - - - - - - 500 mA 30 @ 30mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 2mA, 20mA 200 V
MPSH24_D26Z
MPSH24_D26Z
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 - - - - - - - - 50 mA 30 @ 8mA, 10V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - 30 V
MPSH34_D26Z
MPSH34_D26Z
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 - - - - - - - - 50 mA 15 @ 20mA, 2V - - - 500MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 2mA, 7mA 40 V
MPSH34_D75Z
MPSH34_D75Z
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 - - - - - - - - 50 mA 15 @ 20mA, 2V - - - 500MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 2mA, 7mA 40 V
MPSL01_D26Z
MPSL01_D26Z
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 - - - - - - - - 200 mA 50 @ 10mA, 5V - - - 60MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 5mA, 50mA 120 V
MPSL01_D27Z
MPSL01_D27Z
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 - - - - - - - - 200 mA 50 @ 10mA, 5V - - - 60MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 5mA, 50mA 120 V
MPSL51_D26Z
MPSL51_D26Z
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 - - - - - - - - 200 mA 40 @ 50mA, 5V - - - 60MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 300mV @ 5mA, 50mA 100 V
PN200A_D26Z
PN200A_D26Z
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 - - - - - - - - 500 mA 300 @ 10mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 20mA, 200mA 45 V
PN200A_D74Z
PN200A_D74Z
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 - - - - - - - - 500 mA 300 @ 10mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 20mA, 200mA 45 V
PN200A_D75Z
PN200A_D75Z
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 - - - - - - - - 500 mA 300 @ 10mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 20mA, 200mA 45 V
PN200A_J18Z
PN200A_J18Z
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 - - - - - - - - 500 mA 300 @ 10mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 20mA, 200mA 45 V
PN200_D26Z
PN200_D26Z
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 - - - - - - - - 500 mA 100 @ 150mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 20mA, 200mA 45 V
PN200_D27Z
PN200_D27Z
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 - - - - - - - - 500 mA 100 @ 150mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 20mA, 200mA 45 V
PN200_D74Z
PN200_D74Z
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 - - - - - - - - 500 mA 100 @ 150mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 20mA, 200mA 45 V
PN200_D75Z
PN200_D75Z
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 - - - - - - - - 500 mA 100 @ 150mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 20mA, 200mA 45 V
PN2222A_D81Z
PN2222A_D81Z
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 300MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 40 V
PN2222A_J05Z
PN2222A_J05Z
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 300MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 40 V
BC856A RFG
BC856A RFG
Taiwan Semiconductor
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 65 V
BC856B RFG
BC856B RFG
Taiwan Semiconductor
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 65 V
BC857A RFG
BC857A RFG
Taiwan Semiconductor
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 45 V
BC857B RFG
BC857B RFG
Taiwan Semiconductor
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 45 V
BC857C RFG
BC857C RFG
Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 45 V
BC858A RFG
BC858A RFG
Taiwan Semiconductor
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 30 V
BC858B RFG
BC858B RFG
Taiwan Semiconductor
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 30 V
BC858C RFG
BC858C RFG
Taiwan Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 30 V
BC817-16 RFG
BC817-16 RFG
Taiwan Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 700mV @ 50mA, 500mA 45 V
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 700mV @ 50mA, 500mA 45 V
BC817-40 RFG
BC817-40 RFG
Taiwan Semiconductor
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 700mV @ 50mA, 500mA 45 V
PMST5088,115
PMST5088,115
Download Datasheet for PMST5088,115
Nexperia USA Inc.
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 - - - - - - - - 100 mA 300 @ 100µA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 500mV @ 1mA, 10mA 30 V
BCW60D,235
BCW60D,235
Download Datasheet for BCW60D,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 380 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 550mV @ 1.25mA, 50mA 32 V
BCW66H-TP
BCW66H-TP
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Micro Commercial
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23 - NPN 700mV @ 50mA, 500mA 45 V
BCW66G-TP
BCW66G-TP
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Micro Commercial
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - NPN 700mV @ 50mA, 500mA 45 V
BCW66F-TP
BCW66F-TP
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Micro Commercial
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - NPN 700mV @ 50mA, 500mA 45 V
BC849B-TP
BC849B-TP
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Micro Commercial
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23 - NPN 500mV @ 5mA, 100mA 30 V
BCV71-QR
BCV71-QR
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 250mV @ 500µA, 10mA 60 V
BCV72-QR
BCV72-QR
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 250mV @ 500µA, 10mA 60 V
BC817-25-7-F-52
BC817-25-7-F-52
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Diodes Incorporated
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-323 - NPN 700mV @ 50mA, 500mA 45 V
BC817-25Q-7-F-52
BC817-25Q-7-F-52
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Diodes Incorporated
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 - - - - - - - - 500 mA 100 @ 300mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
BC857BW-TP
BC857BW-TP
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Micro Commercial
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C 150 mW - - SOT-323 - PNP 650mV @ 5mA, 100mA 45 V
BC858CW-TP
BC858CW-TP
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Micro Commercial
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C 200 mW - - SOT-323 - PNP 650mV @ 5mA, 100mA 30 V
BC857C-TP-HF
BC857C-TP-HF
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Micro Commercial
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 45 V
2SC2411-R-TP
2SC2411-R-TP
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Micro Commercial
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 - - - - - - - - 500 mA 82 @ 100mA, 3V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - NPN 400mV @ 50mA, 500mA 32 V
BC807-40-TP-HF
BC807-40-TP-HF
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Micro Commercial
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - PNP 700mV @ 50mA, 500mA 45 V
MMBTA06-TP-HF
MMBTA06-TP-HF
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Micro Commercial
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 250mV @ 10mA, 100mA 80 V
BC858AW-TP
BC858AW-TP
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Micro Commercial
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C 150 mW - - SOT-323 - PNP 650mV @ 5mA, 100mA 30 V
Showing 17401-17450 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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