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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
PBSS5230QAZ
PBSS5230QAZ
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Nexperia USA Inc.
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 - - - - - - - - 2 A 60 @ 2A, 2V - - - 170MHz - - Surface Mount 150°C (TJ) 325 mW - - DFN1010D-3 - PNP 210mV @ 50mA, 1A 30 V
2SCR512P5T100
2SCR512P5T100
ROHM Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 400mV @ 35mA, 700mA 30 V
BCP5616TTA
BCP5616TTA
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.5 W - - SOT-223-3 - NPN 500mV @ 50mA, 500mA 80 V
BCP54TA
BCP54TA
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Diodes Incorporated
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - NPN 500mV @ 50mA, 500mA 45 V
BCP53TA
BCP53TA
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Diodes Incorporated
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 150MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223-3 - PNP 500mV @ 50mA, 500mA 80 V
PBSS5350THR
PBSS5350THR
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Nexperia USA Inc.
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 - - - - - - - - 2 A 80 @ 3A, 2V - - - 100MHz - - Surface Mount 175°C (TJ) 1.44 W - - TO-236AB - PNP 390mV @ 300mA, 3A 50 V
2SD1757KT146S
2SD1757KT146S
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ROHM Semiconductor
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 - - - - - - - - 500 mA 120 @ 100mA, 3V - - - 150MHz - - Surface Mount 150°C (TJ) 200 mW - - SMT3 - NPN 400mV @ 50mA, 500mA 15 V
BCX5110TA
BCX5110TA
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Diodes Incorporated
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 150MHz - - Surface Mount -65°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 500mV @ 50mA, 500mA 45 V
2SB1733TL
2SB1733TL
ROHM Semiconductor
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 - - - - - - - - 1 A 270 @ 100mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 800 mW - - TUMT3 - PNP 350mV @ 25mA, 500mA 30 V
MCH6202-TL-E
MCH6202-TL-E
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On Semiconductor
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 - - - - - - - - 1.5 A 200 @ 100mA, 2V - - - 500MHz - - Surface Mount 150°C (TJ) 1 W - - 6-MCPH - NPN 225mV @ 15mA, 750mA 30 V
JANHCA2N3810
JANHCA2N3810
Microchip Technology
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 - - - - - - - - 50 mA 150 @ 1mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 350 mW - - TO-78-6 - PNP 250mV @ 100µA, 1mA 60 V
CPH3215-TL-E
CPH3215-TL-E
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On Semiconductor
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 - - - - - - - - 1.5 A 200 @ 100mA, 2V - - - 500MHz - - Surface Mount 150°C (TJ) 900 mW - - 3-CPH - NPN 225mV @ 15mA, 750mA 30 V
CMPTA56 TR PBFREE
CMPTA56 TR PBFREE
Download Datasheet for CMPTA56 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 175°C (TJ) 350 mW - - SOT-23 - PNP 250mV @ 10mA, 100mA 80 V
2SB764E-SSH
2SB764E-SSH
Sanyo Denki
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2SCR554PFRAT100
2SCR554PFRAT100
ROHM Semiconductor
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 - - - - - - - - 1.5 A 120 @ 100mA, 3V - - - 300MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 350mV @ 25mA, 500mA 80 V
CMPTA94 TR PBFREE
CMPTA94 TR PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 300 mA 50 @ 10mA, 10V - - - 20MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP 750mV @ 5mA, 50mA 400 V
2SAR512PFRAT100
2SAR512PFRAT100
ROHM Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 430MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 35mA, 700mA 30 V
BSS4130AT116
BSS4130AT116
ROHM Semiconductor
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 - - - - - - - - 1 A 270 @ 100mA, 2V - - - 400MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - NPN 350mV @ 25mA, 500mA 30 V
PBSS5350D,135
PBSS5350D,135
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Nexperia USA Inc.
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 - - - - - - - - 3 A 100 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 750 mW - - 6-TSOP - PNP 300mV @ 200mA, 2A 50 V
BSS5130AT116
BSS5130AT116
ROHM Semiconductor
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 - - - - - - - - 1 A 270 @ 100mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - PNP 380mV @ 25mA, 500mA 30 V
DSS4320T-7
DSS4320T-7
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Diodes Incorporated
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 - - - - - - - - 2 A 220 @ 1A, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 600 mW - - SOT-23-3 - NPN 310mV @ 300mA, 3A 20 V
PBSS5630PA,115
PBSS5630PA,115
Download Datasheet for PBSS5630PA,115
Nexperia USA Inc.
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 - - - - - - - - 6 A 190 @ 2A, 2V - - - 80MHz - - Surface Mount 150°C (TJ) 2.1 W - - 3-HUSON (2x2) - PNP 350mV @ 300mA, 6A 30 V
PBHV9115TLHR
PBHV9115TLHR
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Nexperia USA Inc.
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 - - - - - - - - 1 A 70 @ 50mA, 10V - - - 55MHz - - Surface Mount 150°C (TJ) - - - TO-236AB - PNP 300mV @ 100mA, 500mA 150 V
BCU81-AA
BCU81-AA
On Semiconductor
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PBSS9410PA,115
PBSS9410PA,115
Download Datasheet for PBSS9410PA,115
Nexperia USA Inc.
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 - - - - - - - - 2.7 A 170 @ 1A, 2V - - - 115MHz - - Surface Mount 150°C (TJ) 2.1 W - - 3-HUSON (2x2) - PNP 450mV @ 135mA, 2.7A 100 V
BCX52-10,115
BCX52-10,115
Download Datasheet for BCX52-10,115
Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 145MHz - - Surface Mount 150°C (TJ) 1.3 W - - SOT-89 - PNP 500mV @ 50mA, 500mA 60 V
2SCR533P5T100
2SCR533P5T100
ROHM Semiconductor
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 - - - - - - - - 3 A 180 @ 50mA, 3V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 350mV @ 50mA, 1A 50 V
2SB1695TL
2SB1695TL
ROHM Semiconductor
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 - - - - - - - - 1.5 A 270 @ 100mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 500 mW - - TSMT3 - PNP 370mV @ 50mA, 1A 30 V
2SD2654TLV
2SD2654TLV
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ROHM Semiconductor
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 - - - - - - - - 150 mA 820 @ 1mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 150 mW - - EMT3 - NPN 300mV @ 5mA, 50mA 50 V
BF623,115
BF623,115
Download Datasheet for BF623,115
Nexperia USA Inc.
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 - - - - - - - - 50 mA 50 @ 25mA, 20V - - - 60MHz - - Surface Mount 150°C (TJ) 1.1 W - - SOT-89 - PNP 800mV @ 5mA, 30mA 250 V
PBSS5350D,115
PBSS5350D,115
Download Datasheet for PBSS5350D,115
Nexperia USA Inc.
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 - - - - - - - - 3 A 100 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 750 mW - - 6-TSOP - PNP 300mV @ 200mA, 2A 50 V
NSVBCX17LT1G
NSVBCX17LT1G
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On Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - PNP 620mV @ 50mA, 500mA 45 V
2SC5876T106Q
2SC5876T106Q
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ROHM Semiconductor
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 - - - - - - - - 500 mA 120 @ 50mA, 2V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 300mV @ 10mA, 100mA 60 V
BCX54Z
BCX54Z
Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 500mV @ 50mA, 500mA 45 V
MMSTA14-7-F
MMSTA14-7-F
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Diodes Incorporated
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 - - - - - - - - 300 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
PBSS5350D,125
PBSS5350D,125
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Nexperia USA Inc.
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 - - - - - - - - 3 A 100 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 750 mW - - 6-TSOP - PNP 300mV @ 200mA, 2A 50 V
BCP56F
BCP56F
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 155MHz - - Surface Mount 150°C (TJ) 600 mW - - SOT-223 - NPN 500mV @ 50mA, 500mA 80 V
2SC2881-Y(TE12L,ZC
2SC2881-Y(TE12L,ZC
Download Datasheet for 2SC2881-Y(TE12L,ZC
Toshiba
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 - - - - - - - - 800 mA 120 @ 100mA, 5V - - - 120MHz - - Surface Mount 150°C (TJ) 500 mW - - PW-MINI - NPN 1V @ 50mA, 500mA 120 V
2SAR553PFRAT100
2SAR553PFRAT100
ROHM Semiconductor
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 - - - - - - - - 2 A 180 @ 50mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 35mA, 700mA 50 V
PHPT61002NYCX
PHPT61002NYCX
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Nexperia USA Inc.
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 - - - - - - - - 2 A 100 @ 500mA, 1.5V - - - 140MHz - - Surface Mount 175°C (TJ) 1.25 W - - LFPAK56, Power-SO8 - NPN 75mV @ 50mA, 500mA 100 V
2SA1208S-AE
2SA1208S-AE
On Semiconductor
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BCP51-16-TP
BCP51-16-TP
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Micro Commercial
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-223 - PNP 500mV @ 50mA, 500mA 45 V
2SD2656FRAT106
2SD2656FRAT106
Download Datasheet for 2SD2656FRAT106
ROHM Semiconductor
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 - - - - - - - - 1 A 270 @ 100mA, 2V - - - 400MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 350mV @ 25mA, 500mA 30 V
PBSS4260QAZ
PBSS4260QAZ
Download Datasheet for PBSS4260QAZ
Nexperia USA Inc.
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 - - - - - - - - 2 A 40 @ 2A, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 325 mW - - DFN1010D-3 - NPN 190mV @ 50mA, 1A 60 V
2SAR514PFRAT100
2SAR514PFRAT100
ROHM Semiconductor
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 - - - - - - - - 700 mA 120 @ 100mA, 3V - - - 380MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 15mA, 300mA 80 V
UMT4401U3T106
UMT4401U3T106
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 250MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 750mV @ 50mA, 500mA 40 V
ECH8504-TL-H
ECH8504-TL-H
On Semiconductor
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2SA1201-Y(TE12L,ZC
2SA1201-Y(TE12L,ZC
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Toshiba
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 - - - - - - - - 800 mA 80 @ 100mA, 5V - - - 120MHz - - Surface Mount 150°C (TJ) 500 mW - - PW-MINI - PNP 1V @ 50mA, 500mA 120 V
2SB1710TL
2SB1710TL
ROHM Semiconductor
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 - - - - - - - - 1 A 270 @ 100mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - TSMT3 - PNP 350mV @ 25mA, 500mA 30 V
PHPT61003PYX
PHPT61003PYX
Download Datasheet for PHPT61003PYX
Nexperia USA Inc.
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 - - - - - - - - 3 A 150 @ 500mA, 10V - - - 125MHz - - Surface Mount 175°C (TJ) 1.25 W - - LFPAK56, Power-SO8 - PNP 360mV @ 200mA, 2A 100 V
Showing 17001-17050 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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