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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC237A_J35Z
BC237A_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237B_J35Z
BC237B_J35Z
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237_J35Z
BC237_J35Z
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BC238A_J35Z
BC238A_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC238_J35Z
BC238_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC307B_J35Z
BC307B_J35Z
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 500mV @ 5mA, 100mA 45 V
BC307_J35Z
BC307_J35Z
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BC308A_J35Z
BC308A_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 500mV @ 5mA, 100mA 25 V
BC308C_J35Z
BC308C_J35Z
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 - - - - - - - - 100 mA 380 @ 2mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 500mV @ 5mA, 100mA 25 V
BC308_J35Z
BC308_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 500mV @ 5mA, 100mA 25 V
PDTB143XU135
PDTB143XU135
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NXP Semiconductors
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BC368_J35Z
BC368_J35Z
On Semiconductor
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 - - - - - - - - 2 A 85 @ 500mA, 1V - - - 45MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 100mA, 1A 20 V
BC369_J35Z
BC369_J35Z
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 - - - - - - - - 1.5 A 85 @ 500mA, 1V - - - 45MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 100mA, 1A 20 V
BC516_J35Z
BC516_J35Z
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 - - - - - - - - 1 A 30000 @ 20mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP - Darlington 1V @ 100µA, 100mA 30 V
BC517_J35Z
BC517_J35Z
On Semiconductor
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 - - - - - - - - 1.2 A 30000 @ 20mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1V @ 100µA, 100mA 30 V
BC546A_J35Z
BC546A_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
BC546B_J35Z
BC546B_J35Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
BC546_J35Z
BC546_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
BC547A_J35Z
BC547A_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC547C_J35Z
BC547C_J35Z
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC547_J35Z
BC547_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
2N3640
2N3640
Central Semiconductor Corp
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 - - - - - - - - 10nA (ICBO) 30 @ 10mA, 300mV - - - 500MHz - - Through Hole - - - - TO-106 - PNP - 12 V
BC548A_J35Z
BC548A_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC548B_J35Z
BC548B_J35Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC548C_J35Z
BC548C_J35Z
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC548_J35Z
BC548_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC549B_J35Z
BC549B_J35Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC549C_J35Z
BC549C_J35Z
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC549_J35Z
BC549_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC550B_J35Z
BC550B_J35Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC550_J35Z
BC550_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC556B_J35Z
BC556B_J35Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 65 V
PDTB113EU135
PDTB113EU135
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NXP Semiconductors
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BC635_J35Z
BC635_J35Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 45 V
BC636_J35Z
BC636_J35Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - PNP 500mV @ 50mA, 500mA 45 V
BC637_J35Z
BC637_J35Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 60 V
BC63916_J35Z
BC63916_J35Z
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BC639_J35Z
BC639_J35Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 50mA, 500mA 80 V
BC640_J35Z
BC640_J35Z
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - PNP 500mV @ 50mA, 500mA 80 V
BCX79_J35Z
BCX79_J35Z
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 - - - - - - - - 500 mA 80 @ 10mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 2.5mA, 100mA 45 V
BDW94CF
BDW94CF
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 - - - - - - - - 12 A 750 @ 5A, 3V - - - - - - Through Hole 150°C (TJ) 30 W - - TO-220F-3 - PNP - Darlington 3V @ 100mA, 10A 100 V
BSR50_J35Z
BSR50_J35Z
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 - - - - - - - - 1.5 A 2000 @ 500mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.6V @ 4mA, 1A 45 V
D44H10TU
D44H10TU
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 - - - - - - - - 8 A - - - - - - - Through Hole - - - - TO-220-3 - NPN - 80 V
FJD3076TF
FJD3076TF
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 - - - - - - - - 2 A 130 @ 500mA, 3V - - - 100MHz - - Surface Mount 150°C (TJ) 1 W - - D-Pak - NPN 800mV @ 200mA, 2A 32 V
MMBT3906_D87Z
MMBT3906_D87Z
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - PNP 400mV @ 5mA, 50mA 40 V
MMBT4401_D87Z
MMBT4401_D87Z
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN 750mV @ 50mA, 500mA 40 V
MMBTA06_D87Z
MMBTA06_D87Z
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN 250mV @ 10mA, 100mA 80 V
MMBTA06_L98Z
MMBTA06_L98Z
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN 250mV @ 10mA, 100mA 80 V
MMBTA13_D87Z
MMBTA13_D87Z
On Semiconductor
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 - - - - - - - - 1.2 A 10000 @ 100mA, 5V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MMBTA14_D87Z
MMBTA14_D87Z
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 - - - - - - - - 1.2 A 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
Showing 16901-16950 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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