Solid State Devices Inc (SSDI)

<p>The 1N3324B is a 30V Zener diode rated for 50W power dissipation, manufactured by Solid State Devices Inc (SSDI). It is part of the 1N3305-1N3350B series of high-power Zener diodes designed for voltage regulation in demanding applications.</p><p>&nbsp;</p><p>Key electrical specifications include a Zener voltage of 30V with ±5% tolerance, a maximum impedance (Zzt) of 3 Ω, and a leakage current of 5 µA at 22.8V. The forward voltage is 1.5V at 10A. The device is housed in a DO-5 (DO-203AB) stud mount package with standard anode-to-case polarity. It operates over a junction temperature range of -65°C to +175°C and has a thermal resistance of 2.0°C/W.</p><p>&nbsp;</p><p>This Zener diode is designed for high-power voltage regulation applications requiring up to 50W power dissipation. The stud mount package allows for efficient heat sinking, making it suitable for industrial and military-grade power supplies and voltage reference circuits.</p>

<p>The 1N2989B is a single Zener diode with a nominal Zener voltage of 30V and a power dissipation of 10W. It is designed for voltage regulation applications over a broad range of current and temperature.</p><p>&nbsp;</p><p>Key electrical characteristics include a maximum impedance of 8 Ω at the Zener test current, a forward voltage of 1.5V at 2A, and a reverse leakage current of 5 µA at 22.8V. The device offers a tolerance of ±5%.</p><p>&nbsp;</p><p>The diode is housed in a DO-203AA (DO-4) industry standard metal package with stud mounting. It operates over a junction temperature range of -65°C to +175°C and is hermetically sealed for reliable performance.</p>

<p>The 1N3879 is a silicon fast recovery rectifier diode designed for high surge capability and reliable operation in power conversion circuits. It features a repetitive peak reverse voltage (Vrrm) of 50V and a continuous forward current (If) rating of 6A. The diode offers a fast reverse recovery time (Trr) of 200 ns, making it suitable for high-frequency switching applications.</p><p>&nbsp;</p><p>Electrical characteristics include a forward voltage drop (Vf) of 1.4V at 6A and 25°C, and a low reverse current (Ir) of 15 µA at 25°C. The device is rated for an operating junction temperature range of -55°C to 150°C and has a thermal resistance (RthJC) of 2.5 °C/W.</p><p>&nbsp;</p><p>The 1N3879 is housed in a DO-4 (DO-203AA) stud mount package, with standard polarity (stud is cathode) and a reverse polarity variant (1N3879R, stud is anode). This package provides robust mechanical mounting and efficient heat dissipation for demanding power applications.</p>