| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The 2N2918 is a dual NPN silicon transistor from Solid State Devices Inc (SSDI), designed for differential amplifier applications. It integrates two individual NPN transistor chips in a single hermetically sealed TO-78 metal can package, providing excellent thermal and electrical matching between the two dice.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45V, a maximum continuous collector current of 30mA, and a minimum transition frequency (fT) of 60 MHz. The device offers high DC current gain (hFE) with a minimum of 300 at 1mA, 5V, and features tight hFE matching (0.8 to 1.0) and base-emitter voltage matching (as low as 5.0 mV) between the two transistors, making it suitable for precision analog circuits.
The 2N2918 is housed in a through-hole TO-78-6 metal can package, ensuring robust mechanical and environmental protection. It is rated for an operating and storage junction temperature range of -65°C to +200°C.
The maximum collector-emitter voltage (VCEO) is 45V.
The 2N2918 is available in a through-hole TO-78-6 Metal Can package.
The operating and storage junction temperature range is -65 to +200 °C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified and has low confidence.
The 2N2918 is designed for differential amplifier applications.
The minimum DC current gain (hFE) is 300 at VCE=5V and IC=1mA.
The maximum continuous collector current is 30 mA.