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2N2916 The 2N2916 is a dual NPN silicon bipolar transistor in a through-hole TO-78-6 metal can package, with maximum collector-emitter voltage of 45V and power dissipation of 500mW.
Mfr Part #:

2N2916

Available from 1 distributors
Mfr Name: Solid State Devices Inc (SSDI)
Solid State Devices Inc (SSDI)
The 2N2916 is a dual NPN silicon bipolar transistor in a through-hole TO-78-6 metal can package, with maximum collector-emitter voltage of 45V and power dissipation of 500mW.
✓ Total Stock: 3 pcs

2N2916 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
3 pcs
On Request
3 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
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2N2916 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N2916 Description

Short technical summary and product information.

The 2N2916 from Solid State Devices Inc (SSDI) is a dual NPN bipolar junction transistor array housed in a through-hole TO-78-6 metal can package (supplier package TO-78). It features two matched NPN transistors suitable for a variety of switching and amplification applications.

 

Electrical characteristics include a maximum collector-emitter voltage (Vce) of 45V, maximum collector current of 2 nA, and maximum power dissipation of 500 mW. The DC current gain (hFE) is a minimum of 300 at Ic=1mA and Vce=5V, and the maximum Vce saturation is 350mV at Ib=100µA and Ic=1mA.

2N2916 Quick Information

Product Type: Bipolar Junction Transistor Array
Canonical Name: 2N2916 Dual NPN Silicon Bipolar Transistor
Subcategory: Transistors - Bipolar (BJT) - Arrays

2N2916 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2916 Features

  • Dual NPN silicon transistor array.
  • Maximum collector-emitter voltage 45V.
  • Power dissipation rated at 500mW.
  • DC current gain hFE minimum 300.
  • Through-hole TO-78-6 metal can package.

2N2916 Applications

  • Suitable for low-level amplification circuits.
  • Used in differential amplifier configurations.
  • Ideal for switching applications up to 45V.
  • Applicable in industrial control modules.

2N2916 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N2916?

The maximum collector-emitter voltage (Vce) is 45V.

What is the power dissipation rating of the 2N2916?

The maximum power dissipation is 500mW.

What package does the 2N2916 come in?

The 2N2916 is available in a TO-78-6 Metal Can through-hole package.

What is the minimum DC current gain (hFE) of the 2N2916?

The minimum hFE is 300 at Ic=1mA and Vce=5V.

Is the 2N2916 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant but is unverified.

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