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2N3114 2N3114 is an NPN silicon bipolar junction transistor rated for 150V collector-emitter voltage and 200mA continuous collector current. Housed in a TO-39 through-hole package.
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2N3114

Available from 1 distributors
Mfr Name: Solid State Devices Inc (SSDI)
Solid State Devices Inc (SSDI)
2N3114 is an NPN silicon bipolar junction transistor rated for 150V collector-emitter voltage and 200mA continuous collector current. Housed in a TO-39 through-hole package.
✓ Total Stock: 1 pcs
$ Price Range: $0.09

2N3114 Available from 1 distributor

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✓ Non-Authorised
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1 pcs
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2N3114 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
SVHC Present
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2N3114 Description

Short technical summary and product information.

The 2N3114 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 150V and a continuous collector current rating of 200mA, making it suitable for medium-voltage circuits. The device offers a DC current gain (hFE) ranging from 30 to 120 at VCE=10V, IC=30mA, and a minimum transition frequency of 40MHz for moderate-speed switching. Collector-emitter saturation voltage is typically 1V at IC=50mA, ensuring low on-state losses.

 

The transistor is packaged in a TO-39 metal can with through-hole mounting, providing robust thermal performance. Power dissipation is rated at 0.8W at 25°C ambient and 5W at 25°C case temperature. The operating junction temperature range spans -65°C to +200°C, allowing use in harsh environments. With 9pF output capacitance and 80pF input capacitance, it is suitable for applications where moderate capacitance is acceptable.

2N3114 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N3114 NPN Bipolar Junction Transistor
Subcategory: Bipolar Single

2N3114 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3114 Estimated Pricing

Qty Low High
1+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3114 Features

  • 150V collector-emitter and collector-base breakdown voltage.
  • 200mA continuous collector current rating.
  • DC current gain from 30 to 120 at 30mA.
  • 40MHz minimum transition frequency for moderate speed.
  • TO-39 through-hole metal package for robust mounting.

2N3114 Applications

  • General purpose amplification and switching circuits.
  • Medium voltage driver stages in power supplies.
  • Pre-amplifier stages requiring moderate gain bandwidth.
  • Industrial control logic and relay drivers.

2N3114 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N3114?

150V.

What package type does the 2N3114 use?

TO-39.

What is the operating temperature range of the 2N3114?

-65°C to +200°C.

What is the DC current gain (hFE) of the 2N3114 at 30mA?

30 to 120.

What is the transition frequency of the 2N3114?

40MHz minimum.

What is the collector-emitter saturation voltage of the 2N3114?

1V maximum at IC=50mA, IB=5mA.

What is the maximum power dissipation of the 2N3114?

0.8W at 25°C ambient and 5W at 25°C case temperature.

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