ROHM Semiconductor

<p>PTZTE256.2B is a Zener diode from ROHM Semiconductor's PTZ series. It offers a nominal Zener voltage of 6.6V with a range of 6.2V to 7.0V. The diode is designed for voltage regulation and surge absorption applications.</p><p>&nbsp;</p><p>The device has a maximum power dissipation of 1W, making it suitable for compact power management circuits. It features a low impedance of 6Ω at 40mA test current and a reverse leakage current of 20µA at 3V. The junction temperature can reach up to 150°C, with a storage temperature range of -55°C to +150°C.</p><p>&nbsp;</p><p>The PTZTE256.2B is housed in a surface mount PMDS package (DO-214AC, SMA), which allows for efficient board space utilization. The package is designed for high surge withstand levels and is compatible with standard reflow soldering processes.</p><p>&nbsp;</p><p>This Zener diode is ideal for voltage clamping, overvoltage protection, and reference voltage generation in various electronic systems.</p>

<p>The PTZTE255.6B is a Zener diode from ROHM Semiconductor's PTZ series, designed for voltage regulation and surge absorption applications. It offers a nominal zener voltage of 5.6V with a range of 5.6V to 6.3V, and a maximum power dissipation of 1W.</p><p>&nbsp;</p><p>The device features a low maximum impedance of 8Ω and a reverse leakage current of 20µA at 1.5V. It is constructed using silicon epitaxial planar technology and can withstand high surge levels.</p><p>&nbsp;</p><p>The PTZTE255.6B is housed in a surface mount DO-214AC (SMA) package, also designated as ROHM PMDS. It has an operating junction temperature range up to 150°C and is suitable for compact PCB designs.</p><p>&nbsp;</p><p>Typical applications include voltage regulation, voltage limiting, and surge absorption in various electronic circuits.</p>