| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor R6006ANX is a high-performance N-Channel MOSFET. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current of 6A at a case temperature.
This MOSFET has a maximum on-resistance (Rds On) of 1.2 Ohms at 3A and 10V gate-source voltage. The gate charge (Qg) is 15nC maximum at 10V, and the input capacitance (Ciss) is 520pF maximum at 25V.
Designed for through-hole mounting, the R6006ANX comes in a TO-220FM package. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 40W (Tc).
Key electrical characteristics include a gate threshold voltage of 4.5V at 1mA and a maximum gate-source voltage of ±30V. The technology used is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The maximum input capacitance (Ciss) is 520pF at Vds = 25V.
The maximum gate-source voltage (Vgs Max) is ±30V.
The maximum Rds On resistance is 1.2Ohm at Vgs = 10V and Id = 3A.
The R6006ANX comes in a TO-220FM package.
The maximum operating temperature is 150°C.