| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,057 pcs
|
1057 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor SH8K41GZETB is a dual N-channel power MOSFET designed for various switching applications. It features a maximum drain-source voltage (Vdss) of 80V and a continuous drain current (ID) of 3.4A. The on-state resistance (RDS(on)) is specified at a maximum of 130mΩ at an ID of 3.4A and VGS of 10V.
This MOSFET is available in a compact 8-SOP surface-mount package, making it suitable for space-constrained designs. It operates at junction temperatures up to 150°C and has a power dissipation of 1.4W when mounted on an FR4 board, or 2.0W on a ceramic board. The device is Pb-free and Halogen-free, indicating compliance with environmental standards.
Key electrical characteristics include a gate threshold voltage (VGS(th)) of up to 2.5V at 1mA, an input capacitance (Ciss) of 600pF at 10V, and a gate charge (Qg) of 6.6nC at 5V. These parameters are important for determining switching performance and drive requirements in circuit design.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the SH8K41GZETB is 80V.
The continuous drain current (ID) for the SH8K41GZETB is 3.4A.
The maximum on-state resistance (RDS(on)) is 130mOhm at an ID of 3.4A and VGS of 10V.
The gate threshold voltage (VGS(th)) is a maximum of 2.5V at an ID of 1mA.
The SH8K41GZETB is supplied in an 8-SOP surface-mount package.
The operating junction and storage temperature range is -55°C to +150°C.
Yes, the SH8K41GZETB is RoHS3 Compliant.