| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The R6008ANX from ROHM Semiconductor is a robust N-Channel MOSFET designed for power applications requiring high voltage handling. It features a maximum drain-source voltage (Vdss) of 600V and can handle a continuous current of 8A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 800mOhm at 4A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 4.5V at 1mA. The input capacitance (Ciss) is 680pF at 25V, and the gate charge (Qg) is a maximum of 21nC at 10V. The device supports a maximum gate-to-source voltage of ±30V.
This MOSFET is constructed using MOSFET (Metal Oxide) technology and is rated for a maximum power dissipation of 50W at the case temperature. It operates within a junction temperature range of up to 150°C.
The R6008ANX is supplied in a TO-220FM package, suitable for through-hole mounting. It is classified under RoHS3 compliance and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The R6008ANX has a maximum drain-to-source voltage (Vdss) of 600V.
The R6008ANX MOSFET has a continuous current rating of 8A.
The maximum on-resistance (Rds On) for the R6008ANX is 800mOhm at 4A and 10V.
The R6008ANX MOSFET is supplied in a TO-220FM package.
The R6008ANX operates at a maximum junction temperature (TJ) of 150°C.