| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Driven Configuration | |
| Gate Type | |
| Input Type | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Voltage |
The BD16950EFV-CE2 from ROHM Semiconductor is a high-performance gate driver IC. It is specifically designed to drive N-channel MOSFETs in a half-bridge configuration, offering independent channel control.
This device operates with a supply voltage ranging from 3V to 5.5V, making it suitable for various power management applications. The operating temperature range is broad, from -40°C to 150°C (TJ), ensuring reliability in demanding environments. The BD16950EFV-CE2 features a non-inverting input type and comes in a 24-HTSSOP-B package, with a 24-VSSOP exposed pad variant also available.
With two independent channels, this gate driver is ideal for applications requiring precise control over power switching. Its surface mount capability simplifies integration into compact electronic designs. The BD16950EFV-CE2 is a robust solution for motor control and other power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3V to 5.5V.
-40°C to 150°C (junction temperature).
24-VSSOP (0.220", 5.60mm Width) Exposed Pad, also known as 24-HTSSOP-B.
2 independent channels.
N-Channel MOSFETs.
Non-inverting.
Half-Bridge.