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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SC2235-Y,T6USNF(M
2SC2235-Y,T6USNF(M
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 - - - - - - - - 800 mA 80 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 1V @ 50mA, 500mA 120 V
2SC2235-Y,USNHF(M
2SC2235-Y,USNHF(M
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 - - - - - - - - 800 mA 80 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 1V @ 50mA, 500mA 120 V
2SC2383-O(T6OMI,FM
2SC2383-O(T6OMI,FM
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 - - - - - - - - 1 A 60 @ 200mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 1.5V @ 50mA, 500mA 160 V
2SC2383-O,T6ALPF(M
2SC2383-O,T6ALPF(M
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 - - - - - - - - 1 A 60 @ 200mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 1.5V @ 50mA, 500mA 160 V
2SC2383-Y(T6DNS,FM
2SC2383-Y(T6DNS,FM
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 - - - - - - - - 1 A 60 @ 200mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 1.5V @ 50mA, 500mA 160 V
2SC2383-Y,T6KEHF(M
2SC2383-Y,T6KEHF(M
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 - - - - - - - - 1 A 60 @ 200mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 1.5V @ 50mA, 500mA 160 V
2SC2482(FJTN,F,M)
2SC2482(FJTN,F,M)
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 - - - - - - - - 100 mA 30 @ 20mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 1V @ 1mA, 10mA 300 V
2SC2482(T6TOJS,F,M
2SC2482(T6TOJS,F,M
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 - - - - - - - - 100 mA 30 @ 20mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 1V @ 1mA, 10mA 300 V
2SC2655-O(ND1,AF)
2SC2655-O(ND1,AF)
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 500mV @ 50mA, 1A 50 V
2SC2655-O(ND2,AF)
2SC2655-O(ND2,AF)
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 500mV @ 50mA, 1A 50 V
2SC2655-O(TE6,F,M)
2SC2655-O(TE6,F,M)
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 500mV @ 50mA, 1A 50 V
2SC3328-O,T6KEHF(M
2SC3328-O,T6KEHF(M
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 500mV @ 50mA, 1A 80 V
2SC3328-Y,HOF(M
2SC3328-Y,HOF(M
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 500mV @ 50mA, 1A 80 V
2SC3328-Y,T6CKF(J
2SC3328-Y,T6CKF(J
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 500mV @ 50mA, 1A 80 V
2SC3665-Y(T2NSW,FM
2SC3665-Y(T2NSW,FM
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 - - - - - - - - 800 mA 80 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - MSTM - NPN 1V @ 50mA, 500mA 120 V
2SC3665-Y,T2F(J
2SC3665-Y,T2F(J
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 - - - - - - - - 800 mA 80 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - MSTM - NPN 1V @ 50mA, 500mA 120 V
2SC3665-Y,T2NSF(J
2SC3665-Y,T2NSF(J
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 - - - - - - - - 800 mA 80 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - MSTM - NPN 1V @ 50mA, 500mA 120 V
2SC3665-Y,T2YNSF(J
2SC3665-Y,T2YNSF(J
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 - - - - - - - - 800 mA 80 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - MSTM - NPN 1V @ 50mA, 500mA 120 V
2SC3668-O,T2CLAF(J
2SC3668-O,T2CLAF(J
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - MSTM - NPN 500mV @ 50mA, 1A 50 V
2SC3668-Y,F2PANF(J
2SC3668-Y,F2PANF(J
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - MSTM - NPN 500mV @ 50mA, 1A 50 V
2SC3668-Y,T2F(J
2SC3668-Y,T2F(J
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - MSTM - NPN 500mV @ 50mA, 1A 50 V
2SC3668-Y,T2F(M
2SC3668-Y,T2F(M
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - MSTM - NPN 500mV @ 50mA, 1A 50 V
2SC4793,TOA1F(J
2SC4793,TOA1F(J
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 1.5V @ 50mA, 500mA 230 V
2SC4793,WNLF(J
2SC4793,WNLF(J
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 1.5V @ 50mA, 500mA 230 V
2SC4793,YHF(J
2SC4793,YHF(J
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 1.5V @ 50mA, 500mA 230 V
2SC4793,YHF(M
2SC4793,YHF(M
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 1.5V @ 50mA, 500mA 230 V
2SC4881(CANO,F,M)
2SC4881(CANO,F,M)
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 - - - - - - - - 5 A 100 @ 1A, 1V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 400mV @ 125mA, 2.5A 50 V
2SC4881,LS1SUMIF(M
2SC4881,LS1SUMIF(M
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 - - - - - - - - 5 A 100 @ 1A, 1V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 400mV @ 125mA, 2.5A 50 V
2SC4935-Y,Q(J
2SC4935-Y,Q(J
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 - - - - - - - - 3 A 70 @ 500mA, 2V - - - 80MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 600mV @ 200mA, 2A 50 V
2SC5171(LBS2MATQ,M
2SC5171(LBS2MATQ,M
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 - - - - - - - - 2 A 100 @ 100mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 1V @ 100mA, 1A 180 V
2SC5171(ONK,Q,M)
2SC5171(ONK,Q,M)
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 - - - - - - - - 2 A 100 @ 100mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 1V @ 100mA, 1A 180 V
2SC5171,MATUDQ(J
2SC5171,MATUDQ(J
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 - - - - - - - - 2 A 100 @ 100mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 1V @ 100mA, 1A 180 V
2N3564
2N3564
Central Semiconductor Corp
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 - - - - - - - - 50nA (ICBO) 20 @ 15mA, 10V - - - 400MHz - - Through Hole - - - - TO-106 - NPN 300mV @ 2mA, 10mA 15 V
2SD2695,T6F(J
2SD2695,T6F(J
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 - - - - - - - - 2 A 2000 @ 1A, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 1.5V @ 1mA, 1A 60 V
2SD2695,T6F(M
2SD2695,T6F(M
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 - - - - - - - - 2 A 2000 @ 1A, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - NPN 1.5V @ 1mA, 1A 60 V
TTC009,F(J
TTC009,F(J
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 500mV @ 100mA, 1A 80 V
TTC009,F(M
TTC009,F(M
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 500mV @ 100mA, 1A 80 V
2SA1020-Y,F(M
2SA1020-Y,F(M
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - PNP 500mV @ 50mA, 1A 50 V
2SA1020-Y,T6NSF(J
2SA1020-Y,T6NSF(J
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - PNP 500mV @ 50mA, 1A 50 V
2SA1020-Y,T6WNLF(J
2SA1020-Y,T6WNLF(J
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92MOD - PNP 500mV @ 50mA, 1A 50 V
BC847BM-TP
BC847BM-TP
Download Datasheet for BC847BM-TP
Micro Commercial
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) - - - SOT-883 - NPN 400mV @ 5mA, 100mA 45 V
BC856BM-TP
BC856BM-TP
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Micro Commercial
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) - - - SOT-883 - PNP 500mV @ 5mA, 100mA 65 V
BC857BM-TP
BC857BM-TP
Download Datasheet for BC857BM-TP
Micro Commercial
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) - - - SOT-883 - PNP 400mV @ 100mA, 5mA 45 V
BCX53-16T100
BCX53-16T100
ROHM Semiconductor
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 - - - - - - - - - - - - - - - - Surface Mount - - - - MPT3 - - - -
BC846A-TP
BC846A-TP
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Micro Commercial
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23 - NPN 500mV @ 5mA, 100mA 65 V
BC858B-TP
BC858B-TP
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Micro Commercial
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 30 V
2SAR372P5T100R
2SAR372P5T100R
ROHM Semiconductor
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 - - - - - - - - 700 mA 120 @ 100mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 360mV @ 50mA, 500mA 120 V
2SC3256R
2SC3256R
On Semiconductor
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FJPF5021OTU
FJPF5021OTU
Download Datasheet for FJPF5021OTU
On Semiconductor
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 - - - - - - - - 5 A 20 @ 600mA, 5V - - - 15MHz - - Through Hole 150°C (TJ) 40 W - - TO-220F-3 - NPN 1V @ 600mA, 3A 500 V
2SD1060S-1E
2SD1060S-1E
On Semiconductor
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 - - - - - - - - 5 A 140 @ 1A, 2V - - - 30MHz - - Through Hole 150°C (TJ) 1.75 W - - TO-220-3 - NPN 300mV @ 300mA, 3A 50 V
Showing 16551-16600 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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