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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSC388CYBU
KSC388CYBU
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 50 mA 20 @ 12.5mA, 12.5V 300MHz Through Hole 150°C (TJ) 300 mW TO-92-3 NPN 200mV @ 1.5mA, 15mA 25 V
KSC388CTA
KSC388CTA
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 50 mA 20 @ 12.5mA, 12.5V 300MHz Through Hole 150°C (TJ) 300 mW TO-92-3 NPN 200mV @ 1.5mA, 15mA 25 V
KSC1187YTA
KSC1187YTA
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 30 mA 120 @ 2mA, 10V 700MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN - 20 V
KSD227GBU
KSD227GBU
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 300 mA 200 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 400mV @ 30mA, 300mA 25 V
KSA539YTA
KSA539YTA
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 200 mA 120 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 PNP 500mV @ 15mA, 150mA 45 V
KSC838OTA
KSC838OTA
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 30 mA 70 @ 2mA, 12V 250MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 400mV @ 1mA, 10mA 30 V
KSC2715OMTF
KSC2715OMTF
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 50 mA 70 @ 2mA, 12V 400MHz Surface Mount - 150 mW SOT-23-3 NPN 400mV @ 1mA, 10mA 30 V
KSC838CYBU
KSC838CYBU
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 30 mA 120 @ 2mA, 12V 250MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 400mV @ 1mA, 10mA 30 V
KSP5179TA
KSP5179TA
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 50 mA 25 @ 3mA, 1V 2GHz Through Hole 150°C (TJ) 200 mW TO-92-3 NPN 400mV @ 1mA, 10mA 12 V
KSA1175RTA
KSA1175RTA
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 150 mA 40 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92S PNP 300mV @ 10mA, 100mA 50 V
KSP24BU
KSP24BU
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 100 mA 30 @ 8mA, 10V 620MHz Through Hole 135°C (TJ) 350 mW TO-92-3 NPN - 30 V
PN2907TAR
PN2907TAR
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 800 mA 100 @ 150mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 1.6V @ 50mA, 500mA 40 V
PN2907TF
PN2907TF
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 800 mA 100 @ 150mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 1.6V @ 50mA, 500mA 40 V
PN2907TA
PN2907TA
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 800 mA 100 @ 150mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 1.6V @ 50mA, 500mA 40 V
KSA539OTA
KSA539OTA
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 200 mA 70 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 PNP 500mV @ 15mA, 150mA 45 V
PN2907ANLBU
PN2907ANLBU
On Semiconductor
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 800 mA 100 @ 150mA, 10V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 1.6V @ 50mA, 500mA 60 V
KSP27BU
KSP27BU
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.5V @ 100µA, 100mA 60 V
KSP26BU
KSP26BU
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.5V @ 100µA, 100mA 50 V
KSC1009OTA
KSC1009OTA
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 700mV @ 20mA, 200mA 140 V
KSC1009OBU
KSC1009OBU
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 700mV @ 20mA, 200mA 140 V
MMBT3416
MMBT3416
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 500 mA - - Surface Mount - 350 mW SOT-23-3 NPN - 50 V
KSC1009CYTA
KSC1009CYTA
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 700 mA 120 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 700mV @ 20mA, 200mA 140 V
KSC2001OBU
KSC2001OBU
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 700 mA 90 @ 100mA, 1V 170MHz Through Hole 150°C (TJ) 600 mW TO-92-3 NPN 600mV @ 70mA, 700mA 25 V
KSA1175GTA
KSA1175GTA
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 150 mA 200 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92S PNP 300mV @ 10mA, 100mA 50 V
MMBT100A
MMBT100A
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 500 mA 300 @ 10mA, 1V 250MHz Surface Mount -55°C ~ 150°C (TJ) 350 mW SOT-23-3 NPN 400mV @ 20mA, 200mA 45 V
KSP26TA
KSP26TA
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.5V @ 100µA, 100mA 50 V
KSP25TA
KSP25TA
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.5V @ 100µA, 100mA 40 V
KSC2785GTA
KSC2785GTA
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 150 mA 200 @ 1mA, 6V 300MHz Through Hole 150°C (TJ) 250 mW TO-92S NPN 300mV @ 10mA, 100mA 50 V
KSC2787OBU
KSC2787OBU
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 50 mA 70 @ 1mA, 6V 300MHz Through Hole 150°C (TJ) 250 mW TO-92S NPN 300mV @ 1mA, 10mA 30 V
KSC2787YTA
KSC2787YTA
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 50 mA 120 @ 1mA, 6V 300MHz Through Hole 150°C (TJ) 250 mW TO-92S NPN 300mV @ 1mA, 10mA 30 V
KSC2787RBU
KSC2787RBU
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 50 mA 40 @ 1mA, 6V 300MHz Through Hole 150°C (TJ) 250 mW TO-92S NPN 300mV @ 1mA, 10mA 30 V
KSP77TA
KSP77TA
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 60 V
KSP76BU
KSP76BU
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 50 V
KSP75TA
KSP75TA
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 40 V
KSP75TF
KSP75TF
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 40 V
KSP77BU
KSP77BU
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 60 V
KSP75BU
KSP75BU
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 500 mA 10000 @ 100mA, 5V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 40 V
90024-03TXV
90024-03TXV
Microchip Technology
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 - - - Through Hole - - TO-3 - - -
KSA709CGTA
KSA709CGTA
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 700 mA 200 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSA709YBU
KSA709YBU
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 700 mA 120 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSD1021GBU
KSD1021GBU
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 1 A 200 @ 100mA, 1V 130MHz Through Hole 150°C (TJ) 350 mW TO-92S NPN 500mV @ 100mA, 1A 30 V
KSC2710YBU
KSC2710YBU
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 500 mA 120 @ 100mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S NPN 400mV @ 50mA, 500mA 20 V
KSA910YSHTA
KSA910YSHTA
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 50 mA 120 @ 10mA, 5V 100MHz Through Hole - 800 mW TO-92-3 PNP 800mV @ 1mA, 10mA 150 V
KSC2710GTA
KSC2710GTA
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 500 mA 200 @ 100mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S NPN 400mV @ 50mA, 500mA 20 V
KSB810YTA
KSB810YTA
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 700 mA 120 @ 100mA, 1V 160MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 400mV @ 70mA, 700mA 25 V
KSD1021GTA
KSD1021GTA
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 1 A 200 @ 100mA, 1V 130MHz Through Hole 150°C (TJ) 350 mW TO-92S NPN 500mV @ 100mA, 1A 30 V
KSD1021YTA
KSD1021YTA
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 1 A 120 @ 100mA, 1V 130MHz Through Hole 150°C (TJ) 350 mW TO-92S NPN 500mV @ 100mA, 1A 30 V
KSA709OBU
KSA709OBU
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSA709COTA
KSA709COTA
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSA709CYBU
KSA709CYBU
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 700 mA 120 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
Showing 16701-16750 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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