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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC857CLT1
BC857CLT1
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 (TO-236) - PNP 650mV @ 5mA, 100mA 45 V
MJL21196
MJL21196
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 - - - - - - - - 16 A 25 @ 8A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-264 - NPN 4V @ 3.2A, 16A 250 V
MJF18008
MJF18008
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 - - - - - - - - 8 A 14 @ 1A, 5V - - - 13MHz - - Through Hole -65°C ~ 150°C (TJ) 45 W - - TO-220FP - NPN 700mV @ 900mA, 4.5V 450 V
MJE15035
MJE15035
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 - - - - - - - - 4 A 10 @ 2A, 5V - - - 30MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP 500mV @ 100mA, 1A 350 V
MJW21193
MJW21193
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 - - - - - - - - 16 A 20 @ 8A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-247-3 - PNP 4V @ 3.2A, 16A 250 V
MJB44H11
MJB44H11
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 - - - - - - - - 10 A 40 @ 4A, 1V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - D²PAK - NPN 1V @ 400mA, 8A 80 V
MJB41C
MJB41C
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - 3MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - D²PAK - NPN 1.5V @ 600mA, 6A 100 V
TE02462T
TE02462T
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2SA21400P
2SA21400P
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 120 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - PNP 500mV @ 100mA, 1A 180 V
2SA21400Q
2SA21400Q
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 60 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - PNP 500mV @ 100mA, 1A 180 V
2SC59930P
2SC59930P
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 120 @ 100mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - NPN 500mV @ 100mA, 1A 180 V
2SC59930Q
2SC59930Q
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 60 @ 100mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - NPN 500mV @ 100mA, 1A 180 V
2SC4809J0L
2SC4809J0L
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Panasonic Electronic Components
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 - - - - - - - - 50 mA 75 @ 5mA, 4V - - - 2.7GHz - - Surface Mount 125°C (TJ) 125 mW - - SSMini3-F1 - NPN 500mV @ 4mA, 20mA 10 V
2SC581300L
2SC581300L
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 200 @ 100mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 600 mW - - Mini3-G1 - NPN 500mV @ 20mA, 1A 80 V
2SD262100L
2SD262100L
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Panasonic Electronic Components
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 - - - - - - - - 20 mA 400 @ 2mA, 10V - - - 200MHz - - Surface Mount 125°C (TJ) 100 mW - - SSSMini3-F1 - NPN 200mV @ 1mA, 10mA 100 V
MMBT3906_NL
MMBT3906_NL
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - PNP 400mV @ 5mA, 50mA 40 V
BCP6925TA
BCP6925TA
Diodes Incorporated
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 - - - - - - - - 1 A 160 @ 500mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - PNP 500mV @ 100mA, 1A 20 V
PN2222A,116
PN2222A,116
NXP Semiconductors
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 40 V
PN2907A,116
PN2907A,116
NXP Semiconductors
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 1.6V @ 50mA, 500mA 60 V
MJW0281A
MJW0281A
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 - - - - - - - - 15 A 75 @ 3A, 5V - - - 30MHz - - Through Hole -65°C ~ 150°C (TJ) 150 W - - TO-247-3 - NPN 1V @ 500mA, 5A 260 V
MJW0302A
MJW0302A
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 - - - - - - - - 15 A 75 @ 3A, 5V - - - 30MHz - - Through Hole -65°C ~ 150°C (TJ) 150 W - - TO-247-3 - PNP 1V @ 500mA, 5A 260 V
NJL1302D
NJL1302D
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 - - - - - - - - 15 A 75 @ 5A, 5V - - - 30MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-264 - PNP 3V @ 1A, 10A 260 V
NJL3281D
NJL3281D
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 - - - - - - - - 15 A 75 @ 5A, 5V - - - 30MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-264 - NPN 3V @ 1A, 10A 260 V
TIP41CN
TIP41CN
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STMicroelectronics
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - - - - Through Hole 150°C (TJ) 65 W - - TO-220 - NPN 1.5V @ 600mA, 6A 100 V
TIP42CN
TIP42CN
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STMicroelectronics
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - - - - Through Hole 150°C (TJ) 65 W - - TO-220 - PNP 1.5V @ 600mA, 6A 100 V
BD243A
BD243A
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - - - - Through Hole 150°C (TJ) 65 W - - TO-220-3 - NPN 1.5V @ 1A, 6A 60 V
2SA1837(F,M)
2SA1837(F,M)
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Toshiba
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 70MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - PNP 1.5V @ 50mA, 500mA 230 V
2SA1962-O(Q)
2SA1962-O(Q)
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Toshiba
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 - - - - - - - - 15 A 80 @ 1A, 5V - - - 30MHz - - Through Hole 150°C (TJ) 130 W - - TO-3P(N) - PNP 3V @ 800mA, 8A 230 V
2SC4793(F,M)
2SC4793(F,M)
Download Datasheet for 2SC4793(F,M)
Toshiba
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220NIS - NPN 1.5V @ 50mA, 500mA 230 V
2N4403RLRAG
2N4403RLRAG
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 750mV @ 50mA, 500mA 40 V
2N5087RLRAG
2N5087RLRAG
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 - - - - - - - - 50 mA 250 @ 100µA, 5V - - - 40MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 300mV @ 1mA, 10mA 50 V
4N92
4N92
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2N6427G
2N6427G
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 500µA, 500mA 40 V
2N6497G
2N6497G
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 - - - - - - - - 5 A 10 @ 2.5A, 10V - - - 5MHz - - Through Hole -65°C ~ 150°C (TJ) 80 W - - TO-220 - NPN 5V @ 2A, 5A 250 V
2N6517G
2N6517G
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 - - - - - - - - 500 mA 20 @ 50mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 5mA, 50mA 350 V
BD243CTU
BD243CTU
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - - - - Through Hole 150°C (TJ) 65 W - - TO-220-3 - NPN 1.5V @ 1A, 6A 100 V
MJE3439G
MJE3439G
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 - - - - - - - - 300 mA 15 @ 20mA, 10V - - - 15MHz - - Through Hole -65°C ~ 150°C (TJ) 15 W - - TO-126 - NPN 500mV @ 4mA, 50mA 350 V
MJE4353G
MJE4353G
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 - - - - - - - - 16 A 15 @ 8A, 2V - - - 1MHz - - Through Hole -65°C ~ 150°C (TJ) 125 W - - SOT-93 - PNP 3.5V @ 2A, 16A 160 V
MJE521G
MJE521G
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 - - - - - - - - 4 A 40 @ 1A, 1V - - - - - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-126 - NPN - 40 V
MJE700G
MJE700G
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 - - - - - - - - 4 A 750 @ 1.5A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - PNP - Darlington 2.5V @ 30mA, 1.5A 60 V
MJE800G
MJE800G
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 - - - - - - - - 4 A 750 @ 1.5A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - NPN - Darlington 2.5V @ 30mA, 1.5A 60 V
MPS650G
MPS650G
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 - - - - - - - - 2 A 75 @ 1A, 2V - - - 75MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 500mV @ 200mA, 2A 40 V
MPS6521G
MPS6521G
On Semiconductor
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 - - - - - - - - 100 mA 300 @ 2mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 500mV @ 5mA, 50mA 25 V
MPS6560G
MPS6560G
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 - - - - - - - - 500 mA 50 @ 500mA, 1V - - - 60MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 500mV @ 50mA, 500mA 25 V
MPS6601G
MPS6601G
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 - - - - - - - - 1 A 50 @ 500mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 600mV @ 100mA, 1A 25 V
MPS6602G
MPS6602G
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 - - - - - - - - 1 A 50 @ 500mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 600mV @ 100mA, 1A 40 V
MPS6652G
MPS6652G
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 - - - - - - - - 1 A 50 @ 500mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 600mV @ 100mA, 1A 40 V
MPS6717G
MPS6717G
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 500mV @ 10mA, 250mA 80 V
MPS6725G
MPS6725G
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 - - - - - - - - 1 A 4000 @ 1A, 5V - - - 1GHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 2mA, 1A 50 V
MPS6727G
MPS6727G
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 - - - - - - - - 1 A 50 @ 1A, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 100mA, 1A 40 V
Showing 16701-16750 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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