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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
JANSM2N3636UB/TR
JANSM2N3636UB/TR
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 1.5 W UB PNP 600mV @ 5mA, 50mA 175 V
JANSM2N5002
JANSM2N5002
Microchip Technology
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 50 µA 30 @ 2.5A, 5V - Stud Mount -65°C ~ 200°C (TJ) 2 W TO-59 NPN 1.5V @ 500mA, 5A 80 V
JANSM2N5004
JANSM2N5004
Microchip Technology
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 50 µA 70 @ 2.5A, 5V - Stud Mount -65°C ~ 200°C (TJ) 2 W TO-59 NPN 1.5V @ 500mA, 5A 80 V
JANSP2N3634UB/TR
JANSP2N3634UB/TR
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 1 W UB PNP 600mV @ 5mA, 50mA 140 V
JANSP2N3636
JANSP2N3636
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 600mV @ 5mA, 50mA 175 V
JANSP2N3636L
JANSP2N3636L
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 PNP 600mV @ 5mA, 50mA 175 V
JANSP2N3636UB
JANSP2N3636UB
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 1.5 W UB PNP 600mV @ 5mA, 50mA 175 V
JANSP2N3636UB/TR
JANSP2N3636UB/TR
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 1.5 W UB PNP 600mV @ 5mA, 50mA 175 V
JANSP2N5002
JANSP2N5002
Microchip Technology
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 50 µA 30 @ 2.5A, 5V - Stud Mount -65°C ~ 200°C (TJ) 2 W TO-59 NPN 1.5V @ 500mA, 5A 80 V
JANSP2N5004
JANSP2N5004
Microchip Technology
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 50 µA 70 @ 2.5A, 5V - Stud Mount -65°C ~ 200°C (TJ) 2 W TO-59 NPN 1.5V @ 500mA, 5A 80 V
JANSR2N3439UA
JANSR2N3439UA
Microchip Technology
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 2 µA 40 @ 20mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 800 mW UA NPN 500mV @ 4mA, 50mA 350 V
JANSR2N3634
JANSR2N3634
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 600mV @ 5mA, 50mA 140 V
JANSR2N3634L
JANSR2N3634L
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 PNP 600mV @ 5mA, 50mA 140 V
JANSR2N3634UB
JANSR2N3634UB
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 1 W UB PNP 600mV @ 5mA, 50mA 140 V
JANSR2N3634UB/TR
JANSR2N3634UB/TR
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 1 W UB PNP 600mV @ 5mA, 50mA 140 V
JANSR2N3636
JANSR2N3636
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 600mV @ 5mA, 50mA 175 V
JANSR2N3636L
JANSR2N3636L
Microchip Technology
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 10 µA 50 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 PNP 600mV @ 5mA, 50mA 175 V
JANSR2N5002
JANSR2N5002
Microchip Technology
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 50 µA 30 @ 2.5A, 5V - Stud Mount -65°C ~ 200°C (TJ) 2 W TO-59 NPN 1.5V @ 500mA, 5A 80 V
JANSR2N5004
JANSR2N5004
Microchip Technology
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 50 µA 70 @ 2.5A, 5V - Stud Mount -65°C ~ 200°C (TJ) 2 W TO-59 NPN 1.5V @ 500mA, 5A 80 V
JANKCBR2N5002
JANKCBR2N5002
Microchip Technology
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 50 µA 30 @ 2.5A, 5V - Stud Mount -65°C ~ 200°C (TJ) 2 W Die NPN 1.5V @ 500mA, 5A 80 V
JANKCBR2N5004
JANKCBR2N5004
Microchip Technology
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 50 µA 70 @ 2.5A, 5V - Stud Mount -65°C ~ 200°C (TJ) 2 W Die NPN 1.5V @ 500mA, 5A 80 V
JANTX2N5339U3
JANTX2N5339U3
Microchip Technology
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 100 µA 60 @ 2A, 2V - Surface Mount -65°C ~ 200°C (TJ) 1 W U-3 (TO-276AA) NPN 1.2V @ 500mA, 5A 100 V
2N1016B
2N1016B
Microsemi Corporation
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 7.5 A 20 @ 2A, 4V - - -65°C ~ 150°C (TJ) 150 W TO-82 NPN 2.5V @ 1A, 5A 100 V
2N1016C
2N1016C
Microsemi Corporation
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 7.5 A 10 @ 5A, 4V - - -65°C ~ 150°C (TJ) 150 W TO-82 NPN 2.5V @ 1A, 5A 150 V
2N1016D
2N1016D
Microsemi Corporation
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 7.5 A 6 @ 7.5A, 4V - - -65°C ~ 150°C (TJ) 150 W TO-82 NPN 2.5V @ 1A, 5A 200 V
2N4865
2N4865
Microchip Technology
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2N5093
2N5093
Microsemi Corporation
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2N6048
2N6048
Microchip Technology
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2N6249
2N6249
Microsemi Corporation
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 10 A 10 @ 10A, 3V - Through Hole -65°C ~ 200°C 6 W TO-204AA (TO-3) NPN 1.5V @ 1A, 10A 200 V
2N6249T1
2N6249T1
Microsemi Corporation
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 10 A 10 @ 10A, 3V - Through Hole -65°C ~ 200°C 6 W TO-254AA NPN 1.5V @ 1A, 10A 200 V
2N6250
2N6250
Microsemi Corporation
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 10 A 8 @ 10A, 3V - Through Hole -65°C ~ 200°C 6 W TO-204AA (TO-3) NPN 1.5V @ 1.25A, 10A 275 V
2N6251
2N6251
Microchip Technology
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 10 A 6 @ 10A, 3V - Through Hole -65°C ~ 200°C 6 W TO-204AA (TO-3) NPN 1.5V @ 1.67A, 10A 350 V
2N6251T1
2N6251T1
Microsemi Corporation
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 10 A 6 @ 10A, 3V - Through Hole -65°C ~ 200°C 6 W TO-254AA NPN 1.5V @ 1.67A, 10A 350 V
HS2369A
HS2369A
Microchip Technology
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 - - - - - - - - - -
2SA1952-TP
2SA1952-TP
Download Datasheet for 2SA1952-TP
Micro Commercial Co.
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 5 A 120 @ 1A, 2V 80MHz Surface Mount 150°C (TJ) 1 W D-Pak PNP 500mV @ 200mA, 4A 60 V
2SB1182-Q-TP
2SB1182-Q-TP
Micro Commercial Co.
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 2 A 82 @ 500mA, 3V 100MHz Surface Mount 150°C (TJ) 1.5 W D-Pak PNP 800mV @ 200mA, 2A 32 V
2SB1182-R-TP
2SB1182-R-TP
Micro Commercial Co.
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 2 A 82 @ 500mA, 3V 100MHz Surface Mount 150°C (TJ) 1.5 W D-Pak PNP 800mV @ 200mA, 2A 32 V
2SC2983-Y-TP
2SC2983-Y-TP
Download Datasheet for 2SC2983-Y-TP
Micro Commercial Co.
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 1.5 A 70 @ 100mA, 5V 100MHz Surface Mount 150°C (TJ) 1 W D-Pak NPN 1.5V @ 50mA, 500mA 160 V
2SC3303-Y-TP
2SC3303-Y-TP
Download Datasheet for 2SC3303-Y-TP
Micro Commercial Co.
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 5 A 70 @ 1A, 1V 20MHz Surface Mount 150°C (TJ) 1 W D-Pak NPN 400mV @ 150mA, 3A 80 V
PZT3904_F081
PZT3904_F081
On Semiconductor
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 200 mA 100 @ 10mA, 1V 300MHz Surface Mount -55°C ~ 150°C (TJ) 1 W SOT-223-4 NPN 300mV @ 5mA, 50mA 40 V
FGPF4536YDTU_SN00305
FGPF4536YDTU_SN00305
On Semiconductor
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 - - - - - - - - - -
FGPF4636YDTU
FGPF4636YDTU
On Semiconductor
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MMBT3906_F080
MMBT3906_F080
On Semiconductor
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 200 mA 100 @ 10mA, 1V 250MHz Surface Mount -55°C ~ 150°C (TJ) 350 mW SOT-23-3 PNP 400mV @ 5mA, 50mA 40 V
PN100_G
PN100_G
On Semiconductor
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 500 mA 100 @ 150mA, 5V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 400mV @ 20mA, 200mA 45 V
495220TU_SN00120
495220TU_SN00120
On Semiconductor
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 4 A 1000 @ 3A, 5V - Through Hole -55°C ~ 150°C (TJ) 40 W TO-220-3 NPN - Darlington 1.5V @ 5mA, 2A 325 V
MJD31CETF
MJD31CETF
On Semiconductor
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 - - - - - - - - - -
TIP31ATU_F129
TIP31ATU_F129
On Semiconductor
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 3 A 10 @ 3A, 4V 3MHz Through Hole 150°C (TJ) 2 W TO-220-3 NPN 1.2V @ 375mA, 3A 60 V
TIP32CPWD
TIP32CPWD
On Semiconductor
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BDW93CPWD
BDW93CPWD
On Semiconductor
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 - - - - - - - - - -
MMST4126-7-F
MMST4126-7-F
Download Datasheet for MMST4126-7-F
Diodes Incorporated
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 200 mA 120 @ 2mA, 1V 250MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-323 PNP 400mV @ 5mA, 50mA 25 V
Showing 16601-16650 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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