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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MPS3392
MPS3392
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On Semiconductor
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 - - - - - - - - 100 mA 150 @ 2mA, 4.5V - - - - - - Through Hole - 625 mW - - TO-92-3 - NPN - 25 V
MPS6561
MPS6561
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On Semiconductor
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 - - - - - - - - 600 mA 50 @ 350mA, 1V - - - 60MHz - - Through Hole - 625 mW - - TO-92-3 - NPN 500mV @ 35mA, 350mA 20 V
PN2222BU
PN2222BU
On Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 30 V
2N2222
2N2222
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On Semiconductor
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole - 500 mW - - TO-18 - NPN 1.6V @ 50mA, 500mA 30 V
BCP69TA
BCP69TA
Diodes Incorporated
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 - - - - - - - - 1 A 63 @ 500mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - PNP 500mV @ 100mA, 1A 20 V
2SC5488-TL-E
2SC5488-TL-E
On Semiconductor
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 - - - - - - - - - - - - - - - - Surface Mount - - - - 3-SSFP - - - -
2N3904PH
2N3904PH
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Vishay Dale
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Through Hole - 625 mW - - TO-92-3 - NPN 300mV @ 5mA, 50mA 40 V
MPSA42PH
MPSA42PH
Vishay Dale
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole - 625 mW - - TO-92-3 - NPN 500mV @ 2mA, 20mA 300 V
MMBTA05-7
MMBTA05-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 - NPN 250mV @ 10mA, 100mA 60 V
2N6714
2N6714
On Semiconductor
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 - - - - - - - - 2 A - - - - - - - Through Hole - - - - TO-237 - NPN - 30 V
2N6726
2N6726
On Semiconductor
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 - - - - - - - - 2 A - - - - - - - Through Hole - - - - TO-237 - PNP - 30 V
2N3704
2N3704
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On Semiconductor
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 - - - - - - - - 500 mA 100 @ 50mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 5mA, 100mA 30 V
2N6724
2N6724
On Semiconductor
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 - - - - - - - - 1 A 4000 @ 1A, 5V - - - - - - Through Hole - 1 W - - TO-237 - NPN - Darlington 1.5V @ 2mA, 1A 40 V
FZT2222ATA
FZT2222ATA
Diodes Incorporated
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - NPN 1V @ 50mA, 500mA 40 V
FZT2907ATA
FZT2907ATA
Diodes Incorporated
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.5 W - - SOT-223-3 - PNP 1.6V @ 50mA, 500mA 60 V
BF621TA
BF621TA
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Diodes Incorporated
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 - - - - - - - - 50 mA 50 @ 25mA, 20V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 600mV @ 5mA, 30mA 300 V
BST40TA
BST40TA
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Diodes Incorporated
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 - - - - - - - - 500 mA 40 @ 20mA, 10V - - - 70MHz - - Surface Mount -65°C ~ 150°C (TJ) 1 W - - SOT-89-3 - NPN 500mV @ 4mA, 50mA 250 V
FMMT415TA
FMMT415TA
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Diodes Incorporated
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 - - - - - - - - 500 mA 25 @ 10mA, 10V - - - 40MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23-3 - NPN - Avalanche Mode 500mV @ 1mA, 10mA 100 V
FMMT417TA
FMMT417TA
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Diodes Incorporated
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 - - - - - - - - 500 mA 25 @ 10mA, 10V - - - 40MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23-3 - NPN - Avalanche Mode 500mV @ 1mA, 10mA 100 V
2SB1218A0L
2SB1218A0L
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Panasonic Electronic Components
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 80MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - PNP 500mV @ 10mA, 100mA 45 V
2SB1219ASL
2SB1219ASL
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 170 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - PNP 600mV @ 30mA, 300mA 50 V
2SB1320A0A
2SB1320A0A
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Panasonic Electronic Components
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 80MHz - - Through Hole 150°C (TJ) 400 mW - - MT-1-A1 - PNP 1V @ 10mA, 100mA 50 V
2SB1321A0A
2SB1321A0A
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 85 @ 10mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 600 mW - - MT-1-A1 - PNP 600mV @ 30mA, 300mA 50 V
2SB1322A0A
2SB1322A0A
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Panasonic Electronic Components
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 - - - - - - - - 1 A 85 @ 500mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - PNP 400mV @ 50mA, 500mA 50 V
2SB143400A
2SB143400A
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Panasonic Electronic Components
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 - - - - - - - - 2 A 120 @ 200mA, 2V - - - 110MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - PNP 300mV @ 50mA, 1A 50 V
2SD217700A
2SD217700A
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Panasonic Electronic Components
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 - - - - - - - - 2 A 120 @ 200mA, 2V - - - 110MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN 300mV @ 50mA, 1A 50 V
2SD0601A0L
2SD0601A0L
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Panasonic Electronic Components
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 150MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - NPN 300mV @ 10mA, 100mA 50 V
2SD0602A0L
2SD0602A0L
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 - - - - - - - - 500 mA 85 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - NPN 600mV @ 30mA, 300mA 50 V
2SD132800L
2SD132800L
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 200 @ 500mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G1 - NPN 400mV @ 20mA, 500mA 20 V
2SA11100Q
2SA11100Q
Panasonic Electronic Components
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 - - - - - - - - 500 mA 90 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - PNP 1V @ 30mA, 300mA 120 V
2SA1535AR
2SA1535AR
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Panasonic Electronic Components
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 - - - - - - - - 1 A 130 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - PNP 2V @ 50mA, 500mA 180 V
2SA0794AR
2SA0794AR
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 130 @ 150mA, 10V - - - 120MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - PNP 400mV @ 50mA, 500mA 120 V
2SA08850R
2SA08850R
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Panasonic Electronic Components
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 - - - - - - - - 1 A 120 @ 500mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 5 W - - TO-126B-A1 - PNP 500mV @ 50mA, 500mA 35 V
2SA08860Q
2SA08860Q
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Panasonic Electronic Components
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 - - - - - - - - 1.5 A 80 @ 1A, 5V - - - 150MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - PNP 1V @ 150mA, 1.5A 40 V
2SA09000R
2SA09000R
Panasonic Electronic Components
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 - - - - - - - - 1 A 130 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - PNP 500mV @ 50mA, 500mA 18 V
2SC3943
2SC3943
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Panasonic Electronic Components
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 - - - - - - - - 150 mA 20 @ 100mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 500mV @ 15mA, 150mA 50 V
2SC3944AQ
2SC3944AQ
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Panasonic Electronic Components
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 - - - - - - - - 1 A 90 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 2V @ 50mA, 500mA 180 V
2SC4212H
2SC4212H
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Panasonic Electronic Components
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 - - - - - - - - 200 mA 40 @ 10mA, 10V - - - 80MHz - - Through Hole 150°C (TJ) 5 W - - TO-126B-A1 - NPN 1V @ 5mA, 50mA 300 V
2SC4953
2SC4953
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Panasonic Electronic Components
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 - - - - - - - - 3 A 8 @ 1.2A, 2V - - - 10MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - NPN 1V @ 300mA, 1.5A 400 V
2SC51210P
2SC51210P
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Panasonic Electronic Components
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 - - - - - - - - 70 mA 30 @ 5mA, 10V - - - 80MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - NPN 1.2V @ 5mA, 50mA 400 V
2SD1264AP
2SD1264AP
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Panasonic Electronic Components
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 - - - - - - - - 2 A 100 @ 150mA, 10V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1V @ 50mA, 500mA 180 V
2SD1267AP
2SD1267AP
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Panasonic Electronic Components
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 - - - - - - - - 4 A 120 @ 1A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1.5V @ 400mA, 4A 80 V
2SD1271AP
2SD1271AP
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Panasonic Electronic Components
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 - - - - - - - - 7 A 130 @ 3A, 2V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 500mV @ 250mA, 5A 100 V
2SD1275AP
2SD1275AP
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Panasonic Electronic Components
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 - - - - - - - - 2 A 4000 @ 2A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN - Darlington 2.5V @ 8mA, 2A 80 V
2SD1276AP
2SD1276AP
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 - - - - - - - - 4 A 4000 @ 3A, 3V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN - Darlington 4V @ 20mA, 5A 80 V
JANTXV2N3439U4
JANTXV2N3439U4
Microchip Technology
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2SB10730RL
2SB10730RL
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Panasonic Electronic Components
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 - - - - - - - - 4 A 180 @ 2A, 2V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F1 - PNP 1V @ 100mA, 3A 20 V
2SB1417APA
2SB1417APA
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 - - - - - - - - 3 A 120 @ 1A, 4V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - MT-4-A1 - PNP 1.2V @ 375mA, 3A 80 V
2SB1418AQA
2SB1418AQA
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Panasonic Electronic Components
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 - - - - - - - - 2 A 2000 @ 2A, 4V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - MT-4-A1 - PNP - Darlington 2.5V @ 8mA, 2A 80 V
2SB14400RL
2SB14400RL
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 - - - - - - - - 2 A 120 @ 200mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F1 - PNP 300mV @ 50mA, 1A 50 V
Showing 16601-16650 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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