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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
HCT2222ATX
HCT2222ATX
TT Electronics/BI
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 - - - Surface Mount - - 4-SMD NPN - -
HCT2222ATXV
HCT2222ATXV
TT Electronics/BI
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 - - - Surface Mount - - 4-SMD NPN - -
2SC2859-GR(TE85L,F
2SC2859-GR(TE85L,F
Toshiba
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 500 mA 200 @ 100mA, 1V 300MHz Surface Mount 125°C (TJ) 150 mW S-Mini NPN 250mV @ 10mA, 100mA 30 V
2SC2859-O(TE85L,F)
2SC2859-O(TE85L,F)
Toshiba
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 500 mA 70 @ 100mA, 1V 300MHz Surface Mount 125°C (TJ) 150 mW S-Mini NPN 250mV @ 10mA, 100mA 30 V
2SA1954-A(TE85L,F)
2SA1954-A(TE85L,F)
Toshiba
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 500 mA 300 @ 10mA, 2V 130MHz Surface Mount 125°C (TJ) 100 mW SC-70 PNP 250mV @ 10mA, 200mA 12 V
FJN3303FTA
FJN3303FTA
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On Semiconductor
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 1.5 A 14 @ 500mA, 2V 4MHz Through Hole 150°C (TJ) 650 mW TO-92-3 NPN 3V @ 500mA, 1.5A 400 V
KSH42CTM
KSH42CTM
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On Semiconductor
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 6 A 15 @ 3A, 4V 3MHz Surface Mount 150°C (TJ) 20 W D-Pak PNP 1.5V @ 600mA, 6A 100 V
APT13005SU-G1
APT13005SU-G1
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Diodes Incorporated
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 3.2 A 8 @ 2A, 5V 4MHz Through Hole -65°C ~ 150°C (TJ) 20 W TO-126 NPN 1V @ 750mA, 3A 450 V
APT13003EZTR-G1
APT13003EZTR-G1
Diodes Incorporated
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 1.5 A 13 @ 500mA, 2V 4MHz Through Hole -65°C ~ 150°C (TJ) 1.1 W TO-92 NPN 400mV @ 250mA, 1A 465 V
APT13003LZTR-G1
APT13003LZTR-G1
Diodes Incorporated
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 800 mA 6 @ 300mA, 10V - Through Hole -55°C ~ 150°C (TJ) 800 mW TO-92 NPN 500mV @ 40mA, 200mA 450 V
APT13003SZTR-G1
APT13003SZTR-G1
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Diodes Incorporated
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 1.3 A 5 @ 1A, 2V 4MHz Through Hole -65°C ~ 150°C (TJ) 1.1 W TO-92 NPN 1.2V @ 250mA, 1A 450 V
APT13005SI-G1
APT13005SI-G1
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Diodes Incorporated
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 3.2 A 8 @ 2A, 5V 4MHz Through Hole -65°C ~ 150°C (TJ) 25 W TO-251 NPN 1V @ 750mA, 3A 450 V
APT13005TF-G1
APT13005TF-G1
Diodes Incorporated
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 4 A 8 @ 2A, 5V 4MHz Through Hole -65°C ~ 150°C (TJ) 28 W TO-220-3 NPN 900mV @ 1A, 4A 450 V
APT13005T-G1
APT13005T-G1
Diodes Incorporated
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 4 A 8 @ 2A, 5V 4MHz Through Hole -65°C ~ 150°C (TJ) 75 W TO-220-3 NPN 900mV @ 1A, 4A 450 V
BC847AT,115
BC847AT,115
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NXP Semiconductors
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 100 mA 110 @ 2mA, 5V 100MHz Surface Mount 150°C (TJ) 150 mW SC-75 NPN 400mV @ 5mA, 100mA 45 V
BUL770-S
BUL770-S
Bourns
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 2.5 A 7 @ 800mA, 1V - Through Hole - 50 W TO-220 NPN 250mV @ 160mA, 800mA 400 V
TIP126D
TIP126D
Bourns
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 5 A 1000 @ 3A, 3V - Through Hole - 2 W TO-220 PNP - Darlington 4V @ 20mA, 5A 80 V
STX93003-AP
STX93003-AP
STMicroelectronics
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 1 A 16 @ 350mA, 5V - Through Hole 150°C (TJ) 1.5 W TO-92 PNP 500mV @ 100mA, 500mA 400 V
2N5210TFR
2N5210TFR
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On Semiconductor
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 100 mA 200 @ 100µA, 5V 30MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 700mV @ 1mA, 10mA 50 V
KSH3055TM
KSH3055TM
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On Semiconductor
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 10 A 20 @ 4A, 4V 2MHz Surface Mount 150°C (TJ) 1.75 W D-Pak NPN 8V @ 3.3A, 10A 60 V
KSH44H11TM
KSH44H11TM
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On Semiconductor
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 8 A 40 @ 4A, 1V 50MHz Surface Mount 150°C (TJ) 1.75 W D-Pak NPN 1V @ 400mA, 8A 80 V
STD127DT4
STD127DT4
STMicroelectronics
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 4 A 10 @ 1A, 5V - Surface Mount 150°C (TJ) 35 W DPAK NPN 1.3V @ 1A, 4A 400 V
2N4014 PBFREE
2N4014 PBFREE
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Central Semiconductor Corp
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 1.7µA (ICBO) 60 @ 100mA, 1V 300MHz Through Hole - - TO-18 NPN - 50 V
2N4410 TIN/LEAD
2N4410 TIN/LEAD
Download Datasheet for 2N4410 TIN/LEAD
Central Semiconductor Corp
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 250 mA 60 @ 10mA, 1V 300MHz Through Hole -65°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 200mV @ 100µA, 1mA 80 V
2N5303 PBFREE
2N5303 PBFREE
Download Datasheet for 2N5303 PBFREE
Central Semiconductor Corp
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 20 A - 2MHz Through Hole -65°C ~ 200°C (TJ) 200 W TO-3 NPN - 80 V
2N5885 PBFREE
2N5885 PBFREE
Download Datasheet for 2N5885 PBFREE
Central Semiconductor Corp
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 25 A 20 @ 10A, 4V 4MHz Through Hole -65°C ~ 200°C (TJ) 200 W TO-3 NPN 4V @ 6.25A, 25A 60 V
2N6041 PBFREE
2N6041 PBFREE
Download Datasheet for 2N6041 PBFREE
Central Semiconductor Corp
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 8 A 1000 @ 4A, 4V 4MHz Through Hole -65°C ~ 150°C (TJ) 75 W TO-220-3 PNP - Darlington 2V @ 16mA, 4A 80 V
2SA2124-S-TD-E
2SA2124-S-TD-E
On Semiconductor
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 2 A 200 @ 100mA, 2V 440MHz Surface Mount - 3.5 W PCP PNP 400mV @ 75mA, 1.5A 30 V
2SA2125-S-TD-E
2SA2125-S-TD-E
On Semiconductor
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 3 A 200 @ 100mA, 2V 390MHz Surface Mount - 3.5 W PCP PNP 500mV @ 100mA, 2A 50 V
2SA2125-S-TD-H
2SA2125-S-TD-H
On Semiconductor
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 3 A 200 @ 100mA, 2V 390MHz Surface Mount - 3.5 W PCP PNP 500mV @ 100mA, 2A 50 V
2SB1203S-H-TL-E
2SB1203S-H-TL-E
On Semiconductor
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 5 A 140 @ 500mA, 2V 130MHz Surface Mount 150°C (TJ) 1 W TP-FA PNP 550mV @ 150mA, 3A 50 V
2SB1203T-H-TL-E
2SB1203T-H-TL-E
On Semiconductor
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 5 A 200 @ 500mA, 2V 130MHz Surface Mount 150°C (TJ) 1 W TP-FA PNP 550mV @ 150mA, 3A 50 V
2SB817C-1E
2SB817C-1E
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On Semiconductor
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 12 A 100 @ 1A, 5V 10MHz Through Hole 150°C (TJ) 120 W TO-3P-3L PNP 2V @ 500mA, 5A 140 V
2SC3332R
2SC3332R
On Semiconductor
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 - - - Through Hole - - 3-NP - - -
2SC3332R-AA
2SC3332R-AA
On Semiconductor
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 - - - Through Hole - - 3-NP - - -
2SC3646S-P-TD-E
2SC3646S-P-TD-E
On Semiconductor
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 1 A 140 @ 100mA, 5V 120MHz Surface Mount - 500 mW PCP NPN 400mV @ 40mA, 400mA 100 V
2SC3646T-P-TD-E
2SC3646T-P-TD-E
On Semiconductor
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 1 A 200 @ 100mA, 5V 120MHz Surface Mount - 500 mW PCP NPN 400mV @ 40mA, 400mA 100 V
2SC4486S-AN
2SC4486S-AN
On Semiconductor
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 - - - Through Hole - - 3-NMP - - -
2SC4486T-AN
2SC4486T-AN
On Semiconductor
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 - - - Through Hole - - 3-NMP - - -
2SC5231C8-TL-E
2SC5231C8-TL-E
On Semiconductor
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 - - - Surface Mount - - SMCP - - -
2SC5414AE
2SC5414AE
On Semiconductor
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 - - - Through Hole - - 3-NP - - -
2SC5414AE-AA
2SC5414AE-AA
On Semiconductor
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 - - - Through Hole - - 3-NP - - -
2SC5414AF
2SC5414AF
On Semiconductor
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 - - - Through Hole - - 3-NP - - -
2SC5414AF-AA
2SC5414AF-AA
On Semiconductor
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 - - - Through Hole - - 3-NP - - -
2SC5488-TL-E
2SC5488-TL-E
On Semiconductor
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 - - - Surface Mount - - 3-SSFP - - -
2SC5706-P-TL-E
2SC5706-P-TL-E
On Semiconductor
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 5 A 200 @ 500mA, 2V 400MHz Surface Mount - 800 mW TP-FA NPN 240mV @ 100mA, 2A 100 V
2SC5964-S-TD-E
2SC5964-S-TD-E
On Semiconductor
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 3 A 200 @ 100mA, 2V 380MHz Surface Mount - 1.3 W PCP NPN 290mV @ 100mA, 2A 50 V
CA3045F3159
CA3045F3159
Harris Semiconductor
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 - - - - - - - - - -
2SC6017-TL-EX
2SC6017-TL-EX
On Semiconductor
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 10 A 200 @ 1A, 2V 200MHz Surface Mount - 950 mW TP-FA NPN 360mV @ 250mA, 5A 50 V
2SD1060S-1EX
2SD1060S-1EX
Download Datasheet for 2SD1060S-1EX
On Semiconductor
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 5 A 140 @ 1A, 2V 30MHz Through Hole 150°C (TJ) 1.75 W TO-220-3 NPN 300mV @ 300mA, 3A 50 V
Showing 16451-16500 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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