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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BCW66F215
BCW66F215
Download Datasheet for BCW66F215
NXP Semiconductors
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BUJ103AX,127
BUJ103AX,127
NXP Semiconductors
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 4 A 12 @ 500mA, 5V - Through Hole 150°C (TJ) 26 W TO-220F NPN 1V @ 600mA, 3A 400 V
2SC3746R
2SC3746R
Sanyo Denki
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BD538
BD538
Harris Semiconductor
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2SA2031
2SA2031
Sanyo Denki
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2SC4105N
2SC4105N
Sanyo Denki
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KSC5402DTTU
KSC5402DTTU
On Semiconductor
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 2 A 6 @ 1A, 1V 11MHz Through Hole 150°C (TJ) 50 W TO-220-3 NPN 750mV @ 200mA, 1A 450 V
BD17910STU
BD17910STU
Download Datasheet for BD17910STU
On Semiconductor
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 3 A 63 @ 150mA, 2V 3MHz Through Hole 150°C (TJ) 30 W TO-126-3 NPN 800mV @ 100mA, 1A 80 V
2N3701
2N3701
Solid State Devices Inc (SSDI)
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 1 A 40 @ 150mA, 10V 80MHz Through Hole -65°C ~ 200°C (TJ) 500 mW TO-18 NPN 500mV @ 50mA, 500mA 80 V
BUJ106A,127
BUJ106A,127
NXP Semiconductors
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 10 A 14 @ 500mA, 5V - Through Hole 150°C (TJ) 80 W TO-220AB NPN 1V @ 1.2A, 6A 400 V
BSP 52 E6327
BSP 52 E6327
Download Datasheet for BSP 52 E6327
Infineon Technologies
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 1 A 2000 @ 500mA, 10V 200MHz Surface Mount 150°C (TJ) 1.5 W PG-SOT223-4 NPN - Darlington 1.8V @ 1mA, 1A 80 V
BD240C
BD240C
Harris Semiconductor
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D45C6
D45C6
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 40MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 PNP 500mV @ 50mA, 1A 45 V
D45C12
D45C12
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 40MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 PNP 500mV @ 50mA, 1A 80 V
D45C7
D45C7
Solid State Devices Inc (SSDI)
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 4 A 25 @ 1A, 1V 40MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 PNP 500mV @ 100mA, 1A 60 V
2N3439
2N3439
Solid State Devices Inc (SSDI)
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 1 A 40 @ 20mA, 10V 15MHz Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 NPN 500mV @ 4mA, 50mA 350 V
D45C11
D45C11
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 40MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 PNP 500mV @ 50mA, 1A 80 V
D45C1
D45C1
Solid State Devices Inc (SSDI)
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 4 A 25 @ 1A, 1V 40MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 PNP 500mV @ 100mA, 1A 30 V
D45C3
D45C3
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 40MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 PNP 500mV @ 50mA, 1A 30 V
2N4238
2N4238
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-39 NPN - -
D45C5
D45C5
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 40MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 PNP 500mV @ 50mA, 1A 45 V
D45C2
D45C2
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 40MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 PNP 500mV @ 50mA, 1A 30 V
D45C4
D45C4
Solid State Devices Inc (SSDI)
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 4 A 25 @ 1A, 1V 40MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 PNP 500mV @ 100mA, 1A 45 V
2N2222
2N2222
Solid State Devices Inc (SSDI)
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 800 mA 100 @ 150mA, 10V 250MHz Through Hole -65°C ~ 200°C (TJ) 500 mW TO-18 NPN 1.6V @ 50mA, 500mA 30 V
D44C2
D44C2
Solid State Devices Inc (SSDI)
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 4 A 100 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 30 V
D44C12
D44C12
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 80 V
2N4036
2N4036
Solid State Devices Inc (SSDI)
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 1 A 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 PNP 650mV @ 15mA, 150mA 65 V
TIP29B
TIP29B
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-220 NPN - -
TIP111
TIP111
Solid State Devices Inc (SSDI)
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 2 A 1000 @ 1A, 4V - Through Hole -65°C ~ 150°C (TJ) 50 W TO-220 NPN - Darlington 2.5V @ 8mA, 2A 80 V
2N4033
2N4033
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-39 PNP - -
TIP117
TIP117
Solid State Devices Inc (SSDI)
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 2 A 1000 @ 1A, 4V - Through Hole -65°C ~ 150°C (TJ) 50 W TO-220 PNP - Darlington 2.5V @ 8mA, 2A 100 V
TIP29A
TIP29A
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-220 NPN - -
D44C10
D44C10
Solid State Devices Inc (SSDI)
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 4 A 25 @ 1A, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 100mA, 1A 80 V
D44C4
D44C4
Solid State Devices Inc (SSDI)
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 4 A 25 @ 1A, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 100mA, 1A 45 V
TIP29
TIP29
Solid State Devices Inc (SSDI)
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 1 A 40 @ 200mA, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 30 W TO-220 NPN 700mV @ 125mA, 1A 40 V
TIP112
TIP112
Solid State Devices Inc (SSDI)
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 2 A 1000 @ 1A, 4V - Through Hole -65°C ~ 150°C (TJ) 50 W TO-220 NPN - Darlington 2.5V @ 8mA, 2A 100 V
2N5193
2N5193
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-126 PNP - -
TIP116
TIP116
Solid State Devices Inc (SSDI)
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 2 A 1000 @ 1A, 4V - Through Hole -65°C ~ 150°C (TJ) 50 W TO-220 PNP - Darlington 2.5V @ 8mA, 2A 80 V
D44C5
D44C5
Solid State Devices Inc (SSDI)
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 4 A 100 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 45 V
D44C8
D44C8
Solid State Devices Inc (SSDI)
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 4 A 100 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 60 V
D44C6
D44C6
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 45 V
2N4037
2N4037
Solid State Devices Inc (SSDI)
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 1 A 50 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 PNP 1.4V @ 15mA, 150mA 40 V
D44C3
D44C3
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 30 V
TIP110
TIP110
Solid State Devices Inc (SSDI)
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 2 A 1000 @ 1A, 4V - Through Hole -65°C ~ 150°C (TJ) 50 W TO-220 NPN - Darlington 2.5V @ 8mA, 2A 60 V
D44C9
D44C9
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 60 V
D44C7
D44C7
Solid State Devices Inc (SSDI)
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 4 A 25 @ 1A, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 100mA, 1A 60 V
2N5195
2N5195
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-126 PNP - -
D44H11
D44H11
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-220 NPN - -
D44C11
D44C11
Solid State Devices Inc (SSDI)
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 4 A 100 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 80 V
2N4032
2N4032
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-39 PNP - -
Showing 16401-16450 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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