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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
SZT1009T1
SZT1009T1
On Semiconductor
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DSS3540M-7B
DSS3540M-7B
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Diodes Incorporated
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 - - - - - - - - 500 mA 150 @ 100mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - X1-DFN1006-3 - PNP 350mV @ 50mA, 500mA 40 V
2SA1298-Y,LF
2SA1298-Y,LF
Toshiba
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 120MHz - - Surface Mount 150°C (TJ) 200 mW - - S-Mini - PNP 400mV @ 20mA, 500mA 25 V
MMSTA92-7-F
MMSTA92-7-F
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Diodes Incorporated
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 - - - - - - - - 100 mA 25 @ 30mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP 500mV @ 2mA, 20mA 300 V
DSS5140U-7
DSS5140U-7
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Diodes Incorporated
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 - - - - - - - - 1 A 300 @ 100mA, 5V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 400 mW - - SOT-323 - PNP 500mV @ 100mA, 1A 40 V
DSS5240V-7
DSS5240V-7
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Diodes Incorporated
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 - - - - - - - - 1.8 A 300 @ 100mA, 5V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 600 mW - - SOT-563 - PNP 530mV @ 200mA, 2A 40 V
CMPT2484 TR PBFREE
CMPT2484 TR PBFREE
Download Datasheet for CMPT2484 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 50 mA 250 @ 1mA, 5V - - - - - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - NPN 350mV @ 100µA, 1mA 60 V
SST4403T116
SST4403T116
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - PNP 750mV @ 50mA, 500mA 40 V
BCX53-16-TP
BCX53-16-TP
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Micro Commercial
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 500 mW - - SOT-89 - PNP 500mV @ 50mA, 500mA 80 V
BC857BLP4-7
BC857BLP4-7
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Diodes Incorporated
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - X2-DFN1006-3 - PNP 650mV @ 5mA, 100mA 45 V
2SA1579U3T106
2SA1579U3T106
ROHM Semiconductor
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 - - - - - - - - 50 mA 180 @ 2mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 500mV @ 1mA, 10mA 120 V
BCX19T116
BCX19T116
ROHM Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 250MHz - - Surface Mount 150°C (TJ) 350 mW - - SST3 - NPN 620mV @ 50mA, 500mA 45 V
2PB1424,115
2PB1424,115
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Nexperia USA Inc.
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 - - - - - - - - 3 A 180 @ 100mA, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 2 W - - SOT-89 - PNP 500mV @ 100mA, 2A 20 V
2SC4102U3HZGT106S
2SC4102U3HZGT106S
ROHM Semiconductor
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 - - - - - - - - 50 mA 270 @ 2mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 500mV @ 1mA, 10mA 120 V
SBC847BLT1GPO
SBC847BLT1GPO
On Semiconductor
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SSTA28T116
SSTA28T116
ROHM Semiconductor
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 - - - - - - - - 300 mA 10000 @ 100mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - NPN - Darlington 1.5V @ 100µA, 100mA 80 V
2SA2215,LF
2SA2215,LF
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Toshiba
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 - - - - - - - - 2.5 A 200 @ 500mA, 2V - - - - - - Surface Mount 150°C (TJ) 500 mW - - UFM - PNP 190mV @ 53mA, 1.6A 20 V
MCH6203-TL-E
MCH6203-TL-E
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On Semiconductor
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 - - - - - - - - 1 A 200 @ 100mA, 2V - - - 420MHz - - Surface Mount 150°C (TJ) 1 W - - 6-MCPH - NPN 430mV @ 10mA, 500mA 50 V
ZTX649
ZTX649
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Diodes Incorporated
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 - - - - - - - - 2 A 100 @ 1A, 2V - - - 240MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - NPN 500mV @ 200mA, 2A 25 V
ZTX753
ZTX753
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Diodes Incorporated
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 - - - - - - - - 2 A - - - - 140MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 500mV @ 200mA, 2A 100 V
2N3500
2N3500
Microchip Technology
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 - - - - - - - - 300 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 400mV @ 15mA, 150mA 150 V
ZTX855
ZTX855
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Diodes Incorporated
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 - - - - - - - - 4 A 100 @ 1A, 5V - - - 90MHz - - Through Hole -55°C ~ 200°C (TJ) 1.2 W - - E-Line (TO-92 compatible) - NPN 260mV @ 400mA, 4A 150 V
ZTX949
ZTX949
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Diodes Incorporated
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 - - - - - - - - 4.5 A 100 @ 1A, 1V - - - 100MHz - - Through Hole -55°C ~ 200°C (TJ) 1.58 W - - E-Line (TO-92 compatible) - PNP 320mV @ 300mA, 5A 30 V
ZTX857
ZTX857
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Diodes Incorporated
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 - - - - - - - - 3 A 100 @ 500mA, 10V - - - 80MHz - - Through Hole -55°C ~ 200°C (TJ) 1.2 W - - E-Line (TO-92 compatible) - NPN 250mV @ 600mA, 3A 300 V
ZTX953
ZTX953
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Diodes Incorporated
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 - - - - - - - - 3.5 A 100 @ 1A, 1V - - - 125MHz - - Through Hole -55°C ~ 200°C (TJ) 1.2 W - - E-Line (TO-92 compatible) - PNP 330mV @ 400mA, 4A 100 V
TIP105
TIP105
STMicroelectronics
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 - - - - - - - - 8 A 2000 @ 3A, 4V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 2.5V @ 80mA, 8A 60 V
FJPF13007H2TU
FJPF13007H2TU
Download Datasheet for FJPF13007H2TU
On Semiconductor
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 - - - - - - - - 8 A 26 @ 2A, 5V - - - 4MHz - - Through Hole 150°C (TJ) 40 W - - TO-220F-3 - NPN 3V @ 2A, 8A 400 V
BUTW92
BUTW92
STMicroelectronics
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 - - - - - - - - 45 A 9 @ 60A, 3V - - - - - - Through Hole 150°C (TJ) 180 W - - TO-247-3 - NPN 1V @ 15A, 60A 250 V
2N3637UB
2N3637UB
Microchip Technology
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 - - - - - - - - 1 A 100 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1.5 W - - UB - PNP 600mV @ 5mA, 50mA 175 V
BC816-16VL
BC816-16VL
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount 175°C (TJ) 300 mW - - TO-236AB - NPN 400mV @ 50mA, 500mA 80 V
BC847CM,315
BC847CM,315
Download Datasheet for BC847CM,315
Nexperia USA Inc.
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - SOT-883 - NPN 400mV @ 5mA, 100mA 45 V
2PD601ART,235
2PD601ART,235
Download Datasheet for 2PD601ART,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 210 @ 2mA, 10V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 250mV @ 10mA, 100mA 50 V
BC327A
BC327A
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 700mV @ 50mA, 500mA 45 V
PMBT2222AYSX
PMBT2222AYSX
Download Datasheet for PMBT2222AYSX
Nexperia USA Inc.
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 - - - - - - - - 600 mA 75 @ 10mA, 10V - - - 300MHz - - Surface Mount 150°C (TJ) 250 mW - - 6-TSSOP - NPN 1V @ 50mA, 500mA 40 V
BC857BT116
BC857BT116
ROHM Semiconductor
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 - - - - - - - - 100 mA 210 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 350 mW - - SST3 - PNP 650mV @ 5mA, 100mA 45 V
2SC3325-O(TE85L,F)
2SC3325-O(TE85L,F)
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Toshiba
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 - - - - - - - - 500 mA 70 @ 100mA, 1V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - S-Mini - NPN 250mV @ 10mA, 100mA 50 V
BCW66KHE6327HTSA1
BCW66KHE6327HTSA1
Download Datasheet for BCW66KHE6327HTSA1
Infineon Technologies
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 500 mW - - PG-SOT23 - NPN 450mV @ 50mA, 500mA 45 V
BC54PA,115
BC54PA,115
Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 420 mW - - 3-HUSON (2x2) - NPN 500mV @ 50mA, 500mA 45 V
BCP53HX
BCP53HX
Download Datasheet for BCP53HX
Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 100MHz - - Surface Mount 175°C (TJ) 2.2 W - - SOT-223 - PNP 500mV @ 50mA, 500mA 80 V
BCP53-10HX
BCP53-10HX
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 100MHz - - Surface Mount 175°C (TJ) 2.2 W - - SOT-223 - PNP 500mV @ 50mA, 500mA 80 V
PBSS9110D,115
PBSS9110D,115
Download Datasheet for PBSS9110D,115
Nexperia USA Inc.
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 - - - - - - - - 1 A 150 @ 500mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 700 mW - - 6-TSOP - PNP 320mV @ 100mA, 1A 100 V
BFS19,235
BFS19,235
Download Datasheet for BFS19,235
Nexperia USA Inc.
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 - - - - - - - - 30 mA 65 @ 1mA, 10V - - - 260MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN - 20 V
BCP69-16F
BCP69-16F
Nexperia USA Inc.
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 - - - - - - - - 2 A 100 @ 500mA, 1V - - - 140MHz - - Surface Mount 150°C (TJ) 650 mW - - SOT-223 - PNP 600mV @ 200mA, 2A 20 V
BC848BWT106
BC848BWT106
ROHM Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 600mV @ 5mA, 100mA 30 V
PBSS5520X,135
PBSS5520X,135
Download Datasheet for PBSS5520X,135
Nexperia USA Inc.
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 - - - - - - - - 5 A 250 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-89 - PNP 270mV @ 500mA, 5A 20 V
2SA2030T2L
2SA2030T2L
ROHM Semiconductor
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 - - - - - - - - 500 mA 270 @ 10mA, 2V - - - 260MHz - - Surface Mount 150°C (TJ) 150 mW - - VMT3 - PNP 250mV @ 10mA, 200mA 12 V
ZUMT720TA
ZUMT720TA
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Diodes Incorporated
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 - - - - - - - - 750 mA 90 @ 500mA, 2V - - - 220MHz - - Surface Mount -55°C ~ 150°C (TJ) 500 mW - - SOT-323 - PNP 250mV @ 100mA, 750mA 40 V
2SB1732TL
2SB1732TL
ROHM Semiconductor
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 - - - - - - - - 1.5 A 270 @ 200mA, 2V - - - 400MHz - - Surface Mount 150°C (TJ) 400 mW - - TUMT3 - PNP 200mV @ 25mA, 500mA 12 V
2SD2702TL
2SD2702TL
ROHM Semiconductor
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 - - - - - - - - 1.5 A 270 @ 200mA, 2V - - - 400MHz - - Surface Mount 150°C (TJ) 800 mW - - TUMT3 - NPN 200mV @ 25mA, 500mA 12 V
KSA642GBU
KSA642GBU
Download Datasheet for KSA642GBU
On Semiconductor
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 - - - - - - - - 300 mA 200 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - PNP 600mV @ 30mA, 300mA 25 V
Showing 16251-16300 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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