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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MMBT5210
MMBT5210
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On Semiconductor
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 - - - - - - - - 100 mA 200 @ 100µA, 5V - - - 30MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN 700mV @ 1mA, 10mA 50 V
BC856BW/ZLF
BC856BW/ZLF
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Nexperia USA Inc.
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 - - - - - - - - - - - - - - - - Surface Mount - - - - SOT-323 - - - -
2SB1215S-E
2SB1215S-E
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On Semiconductor
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 - - - - - - - - 3 A 140 @ 500mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 1 W - - TP - PNP 500mV @ 150mA, 1.5A 100 V
2SB1216S-E
2SB1216S-E
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 - - - - - - - - 4 A 140 @ 500mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 1 W - - TP - PNP 500mV @ 200mA, 2A 100 V
2SB1216S-H
2SB1216S-H
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 - - - - - - - - 4 A 140 @ 500mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 1 W - - TP - PNP 500mV @ 200mA, 2A 100 V
2SB1216T-H
2SB1216T-H
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 - - - - - - - - 4 A 200 @ 500mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 1 W - - TP - PNP 500mV @ 200mA, 2A 100 V
2SC3332T
2SC3332T
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 - - - - - - - - 700 mA 200 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 700 mW - - 3-NP - NPN 400mV @ 25mA, 250mA 160 V
2SC4027S-H
2SC4027S-H
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 - - - - - - - - 1.5 A 140 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - TP - NPN 450mV @ 50mA, 500mA 160 V
2SD1207U
2SD1207U
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 - - - - - - - - 2 A 280 @ 100mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 1 W - - 3-MP - NPN 400mV @ 50mA, 1A 50 V
2SD1685F
2SD1685F
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 - - - - - - - - 5 A 160 @ 500mA, 2V - - - 120MHz - - Through Hole 150°C (TJ) 1.5 W - - TO-126ML - NPN 500mV @ 60mA, 3A 20 V
2SD1803T-H
2SD1803T-H
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 - - - - - - - - 5 A 200 @ 500mA, 2V - - - 180MHz - - Through Hole 150°C (TJ) 1 W - - TP - NPN 400mV @ 150mA, 3A 50 V
2SD1805F-E
2SD1805F-E
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 - - - - - - - - 5 A 160 @ 500mA, 2V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - TP - NPN 500mV @ 60mA, 3A 20 V
2SD1805G-E
2SD1805G-E
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 - - - - - - - - 5 A 280 @ 500mA, 2V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - TP - NPN 500mV @ 60mA, 3A 20 V
2SD1815S-H
2SD1815S-H
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 - - - - - - - - 3 A 140 @ 500mA, 5V - - - 180MHz - - Through Hole 150°C (TJ) 1 W - - TP - NPN 400mV @ 150mA, 1.5A 100 V
2SD1815T-H
2SD1815T-H
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 - - - - - - - - 3 A 200 @ 500mA, 5V - - - 180MHz - - Through Hole 150°C (TJ) 1 W - - TP - NPN 400mV @ 150mA, 1.5A 100 V
2SD1816S-H
2SD1816S-H
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 - - - - - - - - 4 A 140 @ 500mA, 5V - - - 180MHz - - Through Hole 150°C (TJ) 1 W - - TP - NPN 400mV @ 200mA, 2A 100 V
2SD1816T-E
2SD1816T-E
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 - - - - - - - - 4 A 200 @ 500mA, 5V - - - 180MHz - - Through Hole 150°C (TJ) 1 W - - TP - NPN 400mV @ 200mA, 2A 100 V
TIP31E-S
TIP31E-S
Bourns
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - - - - Through Hole - 2 W - - TO-220 - NPN 2.5V @ 750MA, 3A 140 V
2SC4482U-AN
2SC4482U-AN
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 - - - - - - - - 5 A 280 @ 500mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 1 W - - 3-NMP - NPN 500mV @ 60mA, 3A 20 V
2SC4489S-AN
2SC4489S-AN
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 - - - - - - - - 2 A 140 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - 3-NMP - NPN 400mV @ 100mA, 1A 100 V
2SC4489T-AN
2SC4489T-AN
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 - - - - - - - - 2 A 200 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - 3-NMP - NPN 400mV @ 100mA, 1A 100 V
2SD1012F-SPA-AC
2SD1012F-SPA-AC
On Semiconductor
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 - - - - - - - - 700 mA 160 @ 50mA, 2V - - - 250MHz - - Through Hole 125°C (TJ) 250 mW - - 3-SPA - NPN 80mV @ 10mA, 100mA 15 V
2SD1012G-SPA-AC
2SD1012G-SPA-AC
On Semiconductor
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 - - - - - - - - 700 mA 280 @ 50mA, 2V - - - 250MHz - - Through Hole 125°C (TJ) 250 mW - - 3-SPA - NPN 80mV @ 10mA, 100mA 15 V
2SD1803S-TL-H
2SD1803S-TL-H
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 - - - - - - - - 5 A 140 @ 500mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 1 W - - TP-FA - NPN 400mV @ 150mA, 3A 50 V
2SD1815S-TL-H
2SD1815S-TL-H
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 - - - - - - - - 3 A 140 @ 500mA, 5V - - - 180MHz - - Surface Mount 150°C (TJ) 1 W - - TP-FA - NPN 400mV @ 150mA, 1.5A 100 V
2SD1815T-TL-H
2SD1815T-TL-H
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 - - - - - - - - 3 A 200 @ 500mA, 5V - - - 180MHz - - Surface Mount 150°C (TJ) 1 W - - TP-FA - NPN 400mV @ 150mA, 1.5A 100 V
CPH3107-TL-E
CPH3107-TL-E
On Semiconductor
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 - - - - - - - - 6 A 200 @ 500mA, 2V - - - 140MHz - - Surface Mount 150°C (TJ) 900 mW - - 3-CPH - PNP 150mV @ 60mA, 3A 15 V
CPH3144-TL-E
CPH3144-TL-E
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 440MHz - - Surface Mount 150°C (TJ) 900 mW - - 3-CPH - PNP 260mV @ 75mA, 1.5A 30 V
CPH6102-TL-E
CPH6102-TL-E
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 - - - - - - - - 1 A 200 @ 100mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 1.3 W - - 6-CPH - PNP 500mV @ 50mA, 500mA 50 V
MCH3105-TL-E
MCH3105-TL-E
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 - - - - - - - - 3 A 200 @ 100mA, 2V - - - 360MHz - - Surface Mount 150°C (TJ) 800 mW - - 3-MCPH - PNP 500mV @ 100mA, 2A 50 V
MCH3144-TL-E
MCH3144-TL-E
On Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 440MHz - - Surface Mount - 800 mW - - 3-MCPH - PNP 260mV @ 75mA, 1.5A 30 V
MCH3205-TL-E
MCH3205-TL-E
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 - - - - - - - - 3 A 200 @ 100mA, 2V - - - 380MHz - - Surface Mount 150°C (TJ) 800 mW - - 3-MCPH - NPN 210mV @ 100mA, 2A 50 V
DSC9G02D0L
DSC9G02D0L
Panasonic Electronic Components
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 - - - - - - - - 15 mA 65 @ 1mA, 6V - - - 650MHz - - Surface Mount 150°C (TJ) 125 mW - - SSMini3-F3-B - NPN - 30 V
BD645-S
BD645-S
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Bourns
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2.5V @ 50mA, 5A 60 V
BD648-S
BD648-S
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 2.5V @ 50mA, 5A 80 V
BD649-S
BD649-S
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2.5V @ 50mA, 5A 100 V
BD650-S
BD650-S
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 2.5V @ 50mA, 5A 100 V
BD651-S
BD651-S
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2.5V @ 50mA, 5A 120 V
BD652-S
BD652-S
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 2.5V @ 50mA, 5A 120 V
BDW93C-S
BDW93C-S
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 - - - - - - - - 12 A 750 @ 5A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 3V @ 100mA, 10A 100 V
TIP152-S
TIP152-S
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 - - - - - - - - 7 A 15 @ 7A, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2V @ 250mA, 5A 400 V
TIPL760C-S
TIPL760C-S
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 - - - - - - - - 4 A 20 @ 500mA, 5V - - - 12MHz - - Through Hole -65°C ~ 150°C (TJ) 75 W - - TO-220 - NPN - Darlington 1V @ 400µA, 2A 550 V
2SD1733TLP
2SD1733TLP
ROHM Semiconductor
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 - - - - - - - - 1 A 120 @ 500mA, 3V - - - 100MHz - - Surface Mount 150°C (TJ) 10 W - - CPT3 - NPN 400mV @ 20mA, 500mA 80 V
BC859CW/ZLF
BC859CW/ZLF
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Nexperia USA Inc.
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 - - - - - - - - - - - - - - - - Surface Mount - - - - SOT-323 - - - -
BDW23C-S
BDW23C-S
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 - - - - - - - - 6 A 750 @ 2A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 3V @ 60mA, 6A 100 V
BD901-S
BD901-S
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220-3 - NPN - Darlington 2.5V @ 12mA, 3A 100 V
BDX53C-S
BDX53C-S
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2.5V @ 12mA, 3A 100 V
BDX33D-S
BDX33D-S
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 - - - - - - - - 10 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2.5V @ 6mA, 3A 120 V
BDV65C-S
BDV65C-S
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 - - - - - - - - 12 A 1000 @ 5A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 3.5 W - - SOT-93 - NPN - Darlington 2V @ 20mA, 5A 120 V
BDW83D-S
BDW83D-S
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 - - - - - - - - 15 A 750 @ 6A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 3.5 W - - SOT-93 - NPN - Darlington 4V @ 150mA, 15A 120 V
Showing 16201-16250 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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