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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MJE13009G
MJE13009G
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On Semiconductor
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 - - - - - - - - 12 A 8 @ 5A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN 3V @ 3A, 12A 400 V
MJE18002G
MJE18002G
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 - - - - - - - - 2 A 14 @ 200mA, 5V - - - 13MHz - - Through Hole -65°C ~ 150°C (TJ) 50 W - - TO-220 - NPN 500mV @ 200mA, 1A 450 V
MPS650G
MPS650G
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 - - - - - - - - 2 A 75 @ 1A, 2V - - - 75MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 500mV @ 200mA, 2A 40 V
MPS6521G
MPS6521G
On Semiconductor
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 - - - - - - - - 100 mA 300 @ 2mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 500mV @ 5mA, 50mA 25 V
MPS6560G
MPS6560G
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 - - - - - - - - 500 mA 50 @ 500mA, 1V - - - 60MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 500mV @ 50mA, 500mA 25 V
MPS6601G
MPS6601G
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 - - - - - - - - 1 A 50 @ 500mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 600mV @ 100mA, 1A 25 V
MPS6602G
MPS6602G
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 - - - - - - - - 1 A 50 @ 500mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 600mV @ 100mA, 1A 40 V
MPS6652G
MPS6652G
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 - - - - - - - - 1 A 50 @ 500mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 600mV @ 100mA, 1A 40 V
MPS6717G
MPS6717G
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 500mV @ 10mA, 250mA 80 V
MPS6725G
MPS6725G
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 - - - - - - - - 1 A 4000 @ 1A, 5V - - - 1GHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 2mA, 1A 50 V
MPS6727G
MPS6727G
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 - - - - - - - - 1 A 50 @ 1A, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 100mA, 1A 40 V
MPS750G
MPS750G
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 - - - - - - - - 2 A 75 @ 1A, 2V - - - 75MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 500mV @ 200mA, 2A 40 V
CP547-PMD19K100-CT
CP547-PMD19K100-CT
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Central Semiconductor Corp
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 - - - - - - - - - - - - - - - - Surface Mount - - - - Die - - - -
MPSA93G
MPSA93G
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 400mV @ 2mA, 20mA 200 V
MPSW01AG
MPSW01AG
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 500mV @ 100mA, 1A 40 V
MPSW01G
MPSW01G
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 500mV @ 100mA, 1A 30 V
MPSW05G
MPSW05G
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 - - - - - - - - 500 mA 60 @ 250mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 400mV @ 10mA, 250mA 60 V
MPSW42RLRAG
MPSW42RLRAG
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 500mV @ 2mA, 20mA 300 V
MPSW45AG
MPSW45AG
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 - - - - - - - - 1 A 25000 @ 200mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 2mA, 1A 50 V
MPSW45G
MPSW45G
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 - - - - - - - - 1 A 25000 @ 200mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN - Darlington 1.5V @ 2mA, 1A 40 V
MPSW51AG
MPSW51AG
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 700mV @ 100mA, 1A 40 V
MPSW63G
MPSW63G
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSW92G
MPSW92G
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 2mA, 20mA 300 V
PN2222G
PN2222G
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1.6V @ 50mA, 500mA 30 V
TIP125G
TIP125G
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 - - - - - - - - 5 A 1000 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 4V @ 20mA, 5A 60 V
TIP30G
TIP30G
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 - - - - - - - - 1 A 15 @ 1A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP 700mV @ 125mA, 1A 40 V
2SA1576ART1G
2SA1576ART1G
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 - - - - - - - - 100 mA 180 @ 2mA, 6V - - - - - - Surface Mount 150°C (TJ) 200 mW - - SC-70-3 (SOT323) - PNP 500mV @ 10mA, 100mA 50 V
2SC4081RT1G
2SC4081RT1G
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 - - - - - - - - 100 mA 180 @ 2mA, 6V - - - - - - Surface Mount 150°C (TJ) 200 mW - - SC-70-3 (SOT323) - NPN 500mV @ 10mA, 100mA 50 V
BD436TG
BD436TG
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 - - - - - - - - 4 A 85 @ 500mA, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 36 W - - TO-126 - PNP 500mV @ 200mA, 2A 32 V
BD679G
BD679G
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 - - - - - - - - 4 A 750 @ 1.5A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-126 - NPN - Darlington 2.5V @ 30mA, 1.5A 80 V
BUD42DT4G
BUD42DT4G
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 - - - - - - - - 4 A 10 @ 2A, 5V - - - - - - Surface Mount -65°C ~ 150°C (TJ) 25 W - - DPAK - NPN 1V @ 500mA, 2A 350 V
PDTA114EE/DG115
PDTA114EE/DG115
NXP Semiconductors
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 - - - - - - - - - - - - - - - - - - - - - - - - - -
BC847BMTF
BC847BMTF
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Surface Mount 150°C (TJ) 310 mW - - SOT-23-3 - NPN 600mV @ 5mA, 100mA 45 V
2SB0953AQ
2SB0953AQ
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Panasonic Electronic Components
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 - - - - - - - - 7 A 90 @ 2A, 2V - - - 150MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - PNP 600mV @ 160mA, 5A 40 V
2SB10540P
2SB10540P
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Panasonic Electronic Components
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 - - - - - - - - 5 A 100 @ 1A, 5V - - - 20MHz - - Through Hole 150°C (TJ) 3 W - - TOP-3F-A1 - PNP 2V @ 300mA, 3A 100 V
2SB10630P
2SB10630P
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Panasonic Electronic Components
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 - - - - - - - - 5 A 100 @ 1A, 5V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - PNP 2V @ 300mA, 3A 100 V
2SB11540Q
2SB11540Q
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Panasonic Electronic Components
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 - - - - - - - - 10 A 90 @ 3A, 2V - - - 30MHz - - Through Hole 150°C (TJ) 3 W - - TOP-3F-A1 - PNP 1.5V @ 1A, 10A 80 V
2SB11560P
2SB11560P
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Panasonic Electronic Components
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 - - - - - - - - 20 A 130 @ 3A, 2V - - - 30MHz - - Through Hole 150°C (TJ) 3 W - - TOP-3F-A1 - PNP 1.5V @ 2A, 20A 80 V
2SB12520Q
2SB12520Q
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Panasonic Electronic Components
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 - - - - - - - - 5 A 5000 @ 4A, 5V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - PNP - Darlington 2.5V @ 4mA, 4A 100 V
2SB12990P
2SB12990P
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Panasonic Electronic Components
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 - - - - - - - - 3 A 400 @ 500mA, 4V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - PNP 1V @ 50mA, 2A 60 V
2SB1623AP
2SB1623AP
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Panasonic Electronic Components
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 - - - - - - - - 4 A 4000 @ 3A, 3V - - - 20MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - PNP - Darlington 4V @ 20mA, 5A 80 V
2SC3506
2SC3506
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Panasonic Electronic Components
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 - - - - - - - - 3 A 6 @ 2A, 5V - - - 4MHz - - Through Hole 150°C (TJ) 3 W - - TOP-3F-A1 - NPN 1.5V @ 400mA, 2A 800 V
2SC3507
2SC3507
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Panasonic Electronic Components
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 - - - - - - - - 5 A 6 @ 3A, 5V - - - 6MHz - - Through Hole 150°C (TJ) 3 W - - TOP-3F-A1 - NPN 1.5V @ 600mA, 3A 800 V
BD243TU
BD243TU
On Semiconductor
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - - - - Through Hole 150°C (TJ) 65 W - - TO-220-3 - NPN 1.5V @ 1A, 6A 45 V
2SC59540Q
2SC59540Q
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Panasonic Electronic Components
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 - - - - - - - - 3 A 500 @ 500mA, 4V - - - 200MHz - - Through Hole 150°C (TJ) 2 W - - TO-220D-A1 - NPN 600mV @ 20mA, 1A 60 V
2SD0946AR
2SD0946AR
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Panasonic Electronic Components
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 - - - - - - - - 1 A 8000 @ 1A, 10V - - - 150MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126B-A1 - NPN - Darlington 1.8V @ 1mA, 1A 50 V
2SD12630P
2SD12630P
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Panasonic Electronic Components
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 - - - - - - - - 750 mA 120 @ 300mA, 10V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1V @ 200mA, 1A 250 V
2SD1263AQ
2SD1263AQ
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Panasonic Electronic Components
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 - - - - - - - - 750 mA 70 @ 300mA, 10V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1V @ 200mA, 1A 300 V
2SD12660P
2SD12660P
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Panasonic Electronic Components
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 - - - - - - - - 3 A 120 @ 1A, 4V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1.2V @ 375mA, 3A 60 V
2SD1266AP
2SD1266AP
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Panasonic Electronic Components
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 - - - - - - - - 3 A 120 @ 1A, 4V - - - 30MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-A1 - NPN 1.2V @ 375mA, 3A 80 V
Showing 16651-16700 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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