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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
FJC790TF
FJC790TF
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On Semiconductor
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 - - - - - - - - 2 A 300 @ 10mA, 2V - - - - - - Surface Mount 150°C (TJ) 500 mW - - SOT-89-3 - PNP 450mV @ 50mA, 2A 40 V
KSC2688YS
KSC2688YS
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On Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 10V - - - 80MHz - - Through Hole 150°C (TJ) 1.25 W - - TO-126 - NPN 1.5V @ 5mA, 50mA 300 V
KSC2688YSTU
KSC2688YSTU
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 - - - - - - - - 200 mA 100 @ 10mA, 10V - - - 80MHz - - Through Hole 150°C (TJ) 1.25 W - - TO-126-3 - NPN 1.5V @ 5mA, 50mA 300 V
FJPF5321TU
FJPF5321TU
On Semiconductor
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 - - - - - - - - 5 A 15 @ 600mA, 5V - - - 14MHz - - Through Hole 150°C (TJ) 40 W - - TO-220F-3 - NPN 1V @ 600mA, 3A 500 V
2SC4521T-TD-E-SY
2SC4521T-TD-E-SY
Sanyo Denki
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TIP30ATU
TIP30ATU
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 - - - - - - - - 1 A 15 @ 1A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - PNP 700mV @ 125mA, 1A 60 V
2SC3495-AA
2SC3495-AA
On Semiconductor
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FP103-TL-E
FP103-TL-E
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BD785
BD785
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2SA1248S
2SA1248S
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2SA1415S-TD-E
2SA1415S-TD-E
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2SC4487T
2SC4487T
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2SA1728-4-TB-E
2SA1728-4-TB-E
On Semiconductor
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2SB1140T
2SB1140T
On Semiconductor
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CPH6704-TL-E
CPH6704-TL-E
On Semiconductor
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SFT1101-TL-E
SFT1101-TL-E
On Semiconductor
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TIP116
TIP116
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - 25MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 2.5V @ 8mA, 2A 80 V
KSD2012YTU
KSD2012YTU
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 3MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F-3 - NPN 1V @ 200mA, 2A 60 V
KSB1366G
KSB1366G
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 - - - - - - - - 3 A 150 @ 500mA, 5V - - - 9MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-3 - PNP 1V @ 200mA, 2A 60 V
KSD362R
KSD362R
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 - - - - - - - - 5 A 40 @ 5A, 5V - - - 10MHz - - Through Hole 150°C (TJ) 40 W - - TO-220-3 - NPN 1V @ 500mA, 5A 70 V
KSH31CTM
KSH31CTM
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Surface Mount 150°C (TJ) 1.56 W - - D-Pak - NPN 1.2V @ 375mA, 3A 100 V
TIP116
TIP116
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Harris Semiconductor
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220F - PNP - Darlington 2.5V @ 8mA, 2A 80 V
TIP117
TIP117
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Harris Semiconductor
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220-3 - PNP - Darlington 2.5V @ 8mA, 2A 100 V
MPS4356
MPS4356
NTE Electronics
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 - - - - - - - - 800 mA 50 @ 10mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 500mV @ 50mA, 500mA 80 V
2SA1740E-TD-E
2SA1740E-TD-E
On Semiconductor
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BUL42D
BUL42D
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BA1A4M-T
BA1A4M-T
Renesas
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2SA1708S-AN
2SA1708S-AN
Sanyo Denki
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - 3-NMP - PNP 600mV @ 40mA, 400mA 100 V
2SB1144S
2SB1144S
On Semiconductor
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KSC2330YH2TA
KSC2330YH2TA
On Semiconductor
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 - - - - - - - - 100 mA 120 @ 20mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 1mA, 10mA 300 V
2SB1700
2SB1700
On Semiconductor
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2SB865
2SB865
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PHPT60610NY115
PHPT60610NY115
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NXP Semiconductors
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PCP1104-TD-H
PCP1104-TD-H
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PMXB65ENE,147
PMXB65ENE,147
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NXP Semiconductors
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2SD1388TP-4-SY
2SD1388TP-4-SY
Sanyo Denki
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2SA1708T-AN-FS
2SA1708T-AN-FS
On Semiconductor
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 - - - - - - - - 100nA (ICBO) 200 @ 100mA, 10V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - 3-NMP - - 600mV @ 40mA, 400mA -
2SAR544PFRAT100
2SAR544PFRAT100
ROHM Semiconductor
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 - - - - - - - - 2.5 A 120 @ 100mA, 3V - - - 280MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - PNP 400mV @ 50mA, 1A 80 V
PBSS302NDH
PBSS302NDH
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Nexperia USA Inc.
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 - - - - - - - - 4 A 250 @ 2A, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 360 mW - - 6-TSOP - NPN 450mV @ 600mA, 6A 40 V
PBSS302PDH
PBSS302PDH
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Nexperia USA Inc.
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 - - - - - - - - 4 A 175 @ 2A, 2V - - - 110MHz - - Surface Mount 150°C (TJ) 360 mW - - 6-TSOP - PNP 450mV @ 600mA, 6A 40 V
PBHV9040ZF
PBHV9040ZF
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Nexperia USA Inc.
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 - - - - - - - - 250 mA 100 @ 50mA, 10V - - - 55MHz - - Surface Mount 150°C (TJ) - - - SOT-223 - PNP 200mV @ 20mA, 100mA 400 V
MJD2873Q-13
MJD2873Q-13
Diodes Incorporated
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 - - - - - - - - 2 A 120 @ 500mA, 2V - - - 65MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.45 W - - TO-252, (D-Pak) - NPN 300mV @ 50mA, 1A 50 V
2SA2070(TE12L,F)
2SA2070(TE12L,F)
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Toshiba
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 - - - - - - - - 1 A 200 @ 100mA, 2V - - - - - - Surface Mount 150°C (TJ) 1 W - - PW-MINI - PNP 200mV @ 10mA, 300mA 50 V
KSC5504DTTU
KSC5504DTTU
On Semiconductor
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 - - - - - - - - 4 A 4 @ 2A, 1V - - - 11MHz - - Through Hole 150°C (TJ) 75 W - - TO-220-3 - NPN 1.5V @ 400mA, 2A 600 V
FMB857B
FMB857B
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On Semiconductor
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 - - - - - - - - 500 mA 220 @ 2mA, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 700 mW - - SuperSOT™-6 - PNP 650mV @ 5mA, 100mA 45 V
495220TU
495220TU
On Semiconductor
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 - - - - - - - - 4 A 1000 @ 3A, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-220-3 - NPN - Darlington 1.5V @ 5mA, 2A 325 V
2SA1723
2SA1723
On Semiconductor
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 - - - - - - - - 300 mA 15 @ 50mA, 5V - - - 1.5GHz - - Through Hole - 1.2 W - - TO-126 - PNP 1V @ 10mA, 100mA 20 V
2N3415
2N3415
NTE Electronics
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 - - - - - - - - 500 mA 180 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 3mA, 50mA 25 V
2N3417
2N3417
NTE Electronics
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 - - - - - - - - 500 mA 180 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 3mA, 50mA 50 V
2N3390
2N3390
NTE Electronics
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 - - - - - - - - 500 mA 400 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - 25 V
Showing 19801-19850 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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