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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
ZTX450STOA
ZTX450STOA
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Diodes Incorporated
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 1 A 100 @ 150mA, 10V 150MHz Through Hole -55°C ~ 200°C (TJ) 1 W E-Line (TO-92 compatible) NPN 250mV @ 15mA, 150mA 45 V
2N3960
2N3960
Microsemi Corporation
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 10µA (ICBO) 60 @ 10mA, 1V - Through Hole -65°C ~ 200°C (TJ) 400 mW TO-18 (TO-206AA) NPN 300mV @ 3mA, 30mA 12 V
JAN2N3960
JAN2N3960
Microsemi Corporation
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 10µA (ICBO) 60 @ 10mA, 1V - Through Hole -65°C ~ 200°C (TJ) 400 mW TO-18 (TO-206AA) NPN 300mV @ 3mA, 30mA 12 V
JANTXV2N3960
JANTXV2N3960
Microsemi Corporation
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 10µA (ICBO) 60 @ 10mA, 1V - Through Hole -65°C ~ 200°C (TJ) 400 mW TO-18 (TO-206AA) NPN 300mV @ 3mA, 30mA 12 V
2N3960UB
2N3960UB
Microsemi Corporation
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 10µA (ICBO) 60 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 400 mW UB NPN 300mV @ 3mA, 30mA 12 V
JAN2N3960UB
JAN2N3960UB
Microsemi Corporation
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 10µA (ICBO) 60 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 400 mW UB NPN 300mV @ 3mA, 30mA 12 V
JANTX2N3960UB
JANTX2N3960UB
Microsemi Corporation
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 10µA (ICBO) 60 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 400 mW UB NPN 300mV @ 3mA, 30mA 12 V
JANTXV2N3960UB
JANTXV2N3960UB
Microsemi Corporation
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 10µA (ICBO) 60 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 400 mW UB NPN 300mV @ 3mA, 30mA 12 V
JANTX2N3996
JANTX2N3996
Microchip Technology
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 10 A 40 @ 1A, 2V - Chassis, Stud Mount -65°C ~ 200°C (TJ) 2 W TO-111 NPN 2V @ 500mA, 5A 80 V
JANTX2N3997
JANTX2N3997
Microchip Technology
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 10 A 80 @ 1A, 2V - Chassis, Stud Mount -65°C ~ 200°C (TJ) 2 W TO-111 NPN 2V @ 500mA, 5A 80 V
2SA1470S
2SA1470S
On Semiconductor
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ZTX857
ZTX857
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Diodes Incorporated
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 3 A 100 @ 500mA, 10V 80MHz Through Hole -55°C ~ 200°C (TJ) 1.2 W E-Line (TO-92 compatible) NPN 250mV @ 600mA, 3A 300 V
ZTX953
ZTX953
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Diodes Incorporated
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 3.5 A 100 @ 1A, 1V 125MHz Through Hole -55°C ~ 200°C (TJ) 1.2 W E-Line (TO-92 compatible) PNP 330mV @ 400mA, 4A 100 V
TIP105
TIP105
STMicroelectronics
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 8 A 2000 @ 3A, 4V - Through Hole 150°C (TJ) 2 W TO-220 PNP - Darlington 2.5V @ 80mA, 8A 60 V
FJPF13007H2TU
FJPF13007H2TU
Download Datasheet for FJPF13007H2TU
On Semiconductor
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 8 A 26 @ 2A, 5V 4MHz Through Hole 150°C (TJ) 40 W TO-220F-3 NPN 3V @ 2A, 8A 400 V
ZTX449STZ
ZTX449STZ
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Diodes Incorporated
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 1 A 100 @ 500mA, 2V 150MHz Through Hole -55°C ~ 200°C (TJ) 1 W E-Line (TO-92 compatible) NPN 1V @ 200mA, 2A 30 V
ZTX449STOB
ZTX449STOB
Download Datasheet for ZTX449STOB
Diodes Incorporated
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 1 A 100 @ 500mA, 2V 150MHz Through Hole -55°C ~ 200°C (TJ) 1 W E-Line (TO-92 compatible) NPN 1V @ 200mA, 2A 30 V
ZTX449STOA
ZTX449STOA
Download Datasheet for ZTX449STOA
Diodes Incorporated
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 1 A 100 @ 500mA, 2V 150MHz Through Hole -55°C ~ 200°C (TJ) 1 W E-Line (TO-92 compatible) NPN 1V @ 200mA, 2A 30 V
ZTX415STOB
ZTX415STOB
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Diodes Incorporated
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 500 mA 25 @ 10mA, 10V 40MHz Through Hole -55°C ~ 175°C (TJ) 680 mW E-Line (TO-92 compatible) NPN - Avalanche Mode 500mV @ 1mA, 10mA 100 V
ZTX415STOA
ZTX415STOA
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Diodes Incorporated
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 500 mA 25 @ 10mA, 10V 40MHz Through Hole -55°C ~ 175°C (TJ) 680 mW E-Line (TO-92 compatible) NPN - Avalanche Mode 500mV @ 1mA, 10mA 100 V
TIP33A
TIP33A
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Central Semiconductor Corp
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 10 A 100 @ 3A, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 80 W TO-218 NPN - 60 V
JAN2N5154
JAN2N5154
Microchip Technology
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 2 A 70 @ 2.5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 1.5V @ 500mA, 5A 80 V
ZTX1151ASTZ
ZTX1151ASTZ
Download Datasheet for ZTX1151ASTZ
Diodes Incorporated
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 3 A 250 @ 500mA, 2V 145MHz Through Hole -55°C ~ 200°C (TJ) 1 W E-Line (TO-92 compatible) PNP 240mV @ 250mA, 3A 40 V
JANTXV2N5154
JANTXV2N5154
Microchip Technology
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 2 A 70 @ 2.5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 1.5V @ 500mA, 5A 80 V
JANTXV2N5154L
JANTXV2N5154L
Microchip Technology
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 2 A 70 @ 2.5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 NPN 1.5V @ 500mA, 5A 80 V
JANTXV2N5237
JANTXV2N5237
Microchip Technology
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 10 A 40 @ 5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 NPN 2.5V @ 1A, 10A 120 V
JAN2N5415
JAN2N5415
Microchip Technology
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 1 A 30 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 750 mW TO-5 PNP 2V @ 5mA, 50mA 200 V
JAN2N5416
JAN2N5416
Microchip Technology
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 1 A 30 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 750 mW TO-5 PNP 2V @ 5mA, 50mA 300 V
JAN2N5416S
JAN2N5416S
Microchip Technology
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 1 A 30 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 750 mW TO-39 (TO-205AD) PNP 2V @ 5mA, 50mA 300 V
JANTXV2N5416S
JANTXV2N5416S
Microchip Technology
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 1 A 30 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 750 mW TO-39 (TO-205AD) PNP 2V @ 5mA, 50mA 300 V
JANTXV2N5664
JANTXV2N5664
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Microchip Technology
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 5 A 40 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 2.5 W TO-66 (TO-213AA) NPN 1V @ 1A, 5A 200 V
JAN2N5666S
JAN2N5666S
Download Datasheet for JAN2N5666S
Microchip Technology
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 5 A 40 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 1.2 W TO-39 (TO-205AD) NPN 1V @ 1A, 5A 200 V
2SC5265LS
2SC5265LS
On Semiconductor
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BC816-16VL
BC816-16VL
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Nexperia USA Inc.
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 500 mA 100 @ 100mA, 1V 100MHz Surface Mount 175°C (TJ) 300 mW TO-236AB NPN 400mV @ 50mA, 500mA 80 V
BC847CM,315
BC847CM,315
Download Datasheet for BC847CM,315
Nexperia USA Inc.
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 100 mA 420 @ 2mA, 5V 100MHz Surface Mount 150°C (TJ) 250 mW SOT-883 NPN 400mV @ 5mA, 100mA 45 V
2PD601ART,235
2PD601ART,235
Download Datasheet for 2PD601ART,235
Nexperia USA Inc.
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 100 mA 210 @ 2mA, 10V 100MHz Surface Mount 150°C (TJ) 250 mW TO-236AB NPN 250mV @ 10mA, 100mA 50 V
JANTX2N5666S
JANTX2N5666S
Download Datasheet for JANTX2N5666S
Microchip Technology
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 5 A 40 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 1.2 W TO-39 (TO-205AD) NPN 1V @ 1A, 5A 200 V
2PD601ART,215
2PD601ART,215
Download Datasheet for 2PD601ART,215
Nexperia USA Inc.
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 100 mA 210 @ 2mA, 10V 100MHz Surface Mount 150°C (TJ) 250 mW TO-236AB NPN 250mV @ 10mA, 100mA 50 V
JAN2N5667S
JAN2N5667S
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Microchip Technology
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 5 A 25 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 1.2 W TO-39 (TO-205AD) NPN 1V @ 1A, 5A 300 V
BC856BW-TP
BC856BW-TP
Download Datasheet for BC856BW-TP
Micro Commercial Co.
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 100 mA 220 @ 2mA, 5V 100MHz Surface Mount -65°C ~ 150°C 150 mW SOT-323 PNP 650mV @ 5mA, 100mA 65 V
BC807-16HVL
BC807-16HVL
Download Datasheet for BC807-16HVL
Nexperia USA Inc.
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 500 mA 100 @ 100mA, 1V 80MHz Surface Mount 175°C (TJ) 320 mW TO-236AB PNP 700mV @ 50mA, 500mA 45 V
BC807-25HVL
BC807-25HVL
Download Datasheet for BC807-25HVL
Nexperia USA Inc.
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 500 mA 160 @ 100mA, 1V 80MHz Surface Mount 175°C (TJ) 320 mW TO-236AB PNP 700mV @ 50mA, 500mA 45 V
ZTX1151ASTOB
ZTX1151ASTOB
Download Datasheet for ZTX1151ASTOB
Diodes Incorporated
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 3 A 250 @ 500mA, 2V 145MHz Through Hole -55°C ~ 200°C (TJ) 1 W E-Line (TO-92 compatible) PNP 240mV @ 250mA, 3A 40 V
2SAR523UBTL
2SAR523UBTL
ROHM Semiconductor
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 100 mA 120 @ 1mA, 6V 300MHz Surface Mount 150°C (TJ) 200 mW UMT3F PNP 400mV @ 5mA, 50mA 50 V
JANTX2N5667S
JANTX2N5667S
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Microchip Technology
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 5 A 25 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 1.2 W TO-39 (TO-205AD) NPN 1V @ 1A, 5A 300 V
JANTXV2N5667S
JANTXV2N5667S
Download Datasheet for JANTXV2N5667S
Microchip Technology
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 5 A 25 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 1.2 W TO-39 (TO-205AD) NPN 1V @ 1A, 5A 300 V
JANTXV2N5680
JANTXV2N5680
Microchip Technology
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 1 A 40 @ 250mA, 2V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 1V @ 50mA, 500mA 120 V
JAN2N6051
JAN2N6051
Microchip Technology
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 12 A 1000 @ 6A, 3V - Through Hole -55°C ~ 175°C (TJ) 150 W TO-3 (TO-204AA) PNP - Darlington 3V @ 120mA, 12A 80 V
JAN2N6193
JAN2N6193
Microchip Technology
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 5 A 60 @ 2A, 2V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 1.2V @ 500mA, 5A 100 V
JAN2N6249
JAN2N6249
Microsemi Corporation
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 10 A 10 @ 10A, 3V - Through Hole -65°C ~ 200°C (TJ) 6 W TO-3 (TO-204AA) NPN 1.5V @ 1A, 10A 200 V
Showing 19801-19850 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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