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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SC3935GQL
2SC3935GQL
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Panasonic Electronic Components
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 - - - - - - - - 50 mA 110 @ 7.2mA, 2.4V - - - 2.5GHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - NPN 500mV @ 4mA, 20mA 10 V
2SC5846G0L
2SC5846G0L
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Panasonic Electronic Components
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 - - - - - - - - 100 mA 180 @ 2mA, 10V - - - 100MHz - - Surface Mount 125°C (TJ) 100 mW - - SSSMini3-F2 - NPN 300mV @ 10mA, 100mA 50 V
2SD0874GRL
2SD0874GRL
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Panasonic Electronic Components
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 - - - - - - - - 1 A 120 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1 W - - MiniP3-F2 - NPN 400mV @ 50mA, 500mA 50 V
2SD1819GRL
2SD1819GRL
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Panasonic Electronic Components
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 - - - - - - - - 100 mA 210 @ 2mA, 10V - - - 150MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-F2 - NPN 300mV @ 10mA, 100mA 50 V
2SD1819GSL
2SD1819GSL
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Panasonic Electronic Components
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BC858AW-7-F
BC858AW-7-F
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Diodes Incorporated
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 200MHz - - Surface Mount -65°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP 650mV @ 5mA, 100mA 30 V
ZX5T955GTC
ZX5T955GTC
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Diodes Incorporated
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 - - - - - - - - 4 A 100 @ 1A, 5V - - - 120MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - SOT-223-3 - PNP 360mV @ 300mA, 3A 140 V
2SC3503CSTU
2SC3503CSTU
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 - - - - - - - - 100 mA 40 @ 10mA, 10V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 7 W - - TO-126-3 - NPN 600mV @ 2mA, 20mA 300 V
BC182B_J35Z
BC182B_J35Z
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 - - - - - - - - 100 mA 40 @ 10µA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC182LA_J35Z
BC182LA_J35Z
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 - - - - - - - - 100 mA - - - - - - - Through Hole -55°C ~ 150°C (TJ) - - - TO-92-3 - NPN - 50 V
BC182LB_J35Z
BC182LB_J35Z
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 - - - - - - - - 100 mA 40 @ 10µA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC182L_J35Z
BC182L_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC182_J35Z
BC182_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 50 V
BC183C_J35Z
BC183C_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC183LC_J35Z
BC183LC_J35Z
On Semiconductor
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 - - - - - - - - 100 mA 40 @ 10µA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC214LB_J35Z
BC214LB_J35Z
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 - - - - - - - - 500 mA 140 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 30 V
BC214LC_J35Z
BC214LC_J35Z
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 - - - - - - - - 500 mA 140 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 30 V
BC214L_J35Z
BC214L_J35Z
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 - - - - - - - - 500 mA 140 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 30 V
BC214_J35Z
BC214_J35Z
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 - - - - - - - - 500 mA 140 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 5mA, 100mA 30 V
BC237A_J35Z
BC237A_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237B_J35Z
BC237B_J35Z
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC237_J35Z
BC237_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC238A_J35Z
BC238A_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC238_J35Z
BC238_J35Z
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 250MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 25 V
BC307B_J35Z
BC307B_J35Z
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 500mV @ 5mA, 100mA 45 V
CP742X-CEN4209-CT20
CP742X-CEN4209-CT20
Central Semiconductor Corp
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BC33725_J35Z
BC33725_J35Z
On Semiconductor
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
BC337A_J35Z
BC337A_J35Z
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
BC337_J35Z
BC337_J35Z
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 45 V
BC338_J35Z
BC338_J35Z
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 700mV @ 50mA, 500mA 25 V
BC368_J35Z
BC368_J35Z
On Semiconductor
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 - - - - - - - - 2 A 85 @ 500mA, 1V - - - 45MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 100mA, 1A 20 V
BC369_J35Z
BC369_J35Z
On Semiconductor
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 - - - - - - - - 1.5 A 85 @ 500mA, 1V - - - 45MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 100mA, 1A 20 V
BC516_J35Z
BC516_J35Z
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 - - - - - - - - 1 A 30000 @ 20mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP - Darlington 1V @ 100µA, 100mA 30 V
BC517_J35Z
BC517_J35Z
On Semiconductor
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 - - - - - - - - 1.2 A 30000 @ 20mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1V @ 100µA, 100mA 30 V
BC546A_J35Z
BC546A_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
BC546B_J35Z
BC546B_J35Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
BC546_J35Z
BC546_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 65 V
BC550B_J35Z
BC550B_J35Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC550_J35Z
BC550_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
BC556B_J35Z
BC556B_J35Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 65 V
BC556_J35Z
BC556_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 65 V
BC557B_J35Z
BC557B_J35Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
BC557_J35Z
BC557_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
BC558B_J35Z
BC558B_J35Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC558C_J35Z
BC558C_J35Z
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC558_J35Z
BC558_J35Z
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
BC559B_J35Z
BC559B_J35Z
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 30 V
90024-03TXV
90024-03TXV
Microchip Technology
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MMBT2222A_D87Z
MMBT2222A_D87Z
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - 300MHz - - Surface Mount 150°C (TJ) 350 mW - - SOT-23-3 - NPN 1V @ 50mA, 500mA 40 V
MMBT3640_D87Z
MMBT3640_D87Z
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 - - - - - - - - 200 mA 30 @ 10mA, 300mV - - - 500MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 - PNP 600mV @ 5mA, 50mA 12 V
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About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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