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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
SPZT2222AT1G
SPZT2222AT1G
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On Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.5 W - - SOT-223 (TO-261) - NPN 1V @ 50mA, 500mA 40 V
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
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 - - - - - - - - 3 A 120 @ 1A, 2V - - - 120MHz - - Surface Mount -65°C ~ 150°C (TJ) 2.1 W - - DPAK - NPN 250mV @ 300mA, 3A 100 V
KSE5020AS
KSE5020AS
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 - - - - - - - - 3 A 15 @ 300mA, 5V - - - 18MHz - - Through Hole 150°C (TJ) 30 W - - TO-126-3 - NPN 1V @ 300mA, 1.5A 500 V
2N3906-G
2N3906-G
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Comchip Technology
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 - - - - - - - - 200 mA 30 @ 100mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) - - - TO-92 - PNP 400mV @ 5mA, 50mA 40 V
BUJ302AD,118
BUJ302AD,118
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WeEn Semiconductors
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 - - - - - - - - 4 A 25 @ 800mA, 3V - - - - - - Surface Mount 150°C (TJ) 80 W - - DPAK - NPN 1.5V @ 1A, 3.5A 400 V
BD13910S
BD13910S
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 - - - - - - - - 1.5 A 63 @ 150mA, 2V - - - - - - Through Hole 150°C (TJ) 1.25 W - - TO-126-3 - NPN 500mV @ 50mA, 500mA 80 V
KSH117TM
KSH117TM
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On Semiconductor
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 - - - - - - - - 2 A 1000 @ 2A, 3V - - - 25MHz - - Surface Mount 150°C (TJ) 1.75 W - - D-Pak - PNP - Darlington 3V @ 40mA, 4A 100 V
KSH112TF
KSH112TF
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 - - - - - - - - 2 A 1000 @ 2A, 3V - - - 25MHz - - Surface Mount 150°C (TJ) 1.75 W - - D-Pak - NPN - Darlington 3V @ 40mA, 4A 100 V
KSH117ITU
KSH117ITU
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 - - - - - - - - 2 A 1000 @ 2A, 3V - - - 25MHz - - Through Hole 150°C (TJ) 1.75 W - - I-PAK - PNP - Darlington 3V @ 40mA, 4A 100 V
KSD2012YYDTU
KSD2012YYDTU
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 3MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F-3 (Y-Forming) - NPN 1V @ 200mA, 2A 60 V
KSC2233
KSC2233
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On Semiconductor
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 - - - - - - - - 4 A 30 @ 1A, 5V - - - 10MHz - - Through Hole 150°C (TJ) 40 W - - TO-220-3 - NPN 1V @ 400mA, 4A 60 V
KSD880OPATU
KSD880OPATU
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On Semiconductor
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 - - - - - - - - 3 A 60 @ 500mA, 5V - - - 3MHz - - Through Hole 150°C (TJ) 30 W - - TO-220-3 - NPN 1V @ 300mA, 3A 60 V
BCR573
BCR573
Infineon Technologies
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KSH2955ITU
KSH2955ITU
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 - - - - - - - - 10 A 20 @ 4A, 4V - - - 2MHz - - Through Hole 150°C (TJ) 1.75 W - - I-PAK - PNP 8V @ 3.3A, 10A 60 V
KSD880Y
KSD880Y
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 3MHz - - Through Hole 150°C (TJ) 30 W - - TO-220-3 - NPN 1V @ 300mA, 3A 60 V
KSH3055ITU
KSH3055ITU
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 - - - - - - - - 10 A 20 @ 4A, 4V - - - 2MHz - - Through Hole 150°C (TJ) 1.75 W - - I-PAK - NPN 8V @ 3.3A, 10A 60 V
TIP32BTU
TIP32BTU
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - PNP 1.2V @ 375mA, 3A 80 V
TIP32CTSTU
TIP32CTSTU
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - PNP 1.2V @ 375mA, 3A 100 V
KSD1943TU
KSD1943TU
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On Semiconductor
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 - - - - - - - - 3 A 400 @ 500mA, 4V - - - - - - Through Hole 150°C (TJ) 40 W - - TO-220-3 - NPN 1V @ 50mA, 2A 60 V
KSB1023TU
KSB1023TU
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On Semiconductor
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 - - - - - - - - 3 A 1000 @ 3A, 2V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220F-3 - PNP - Darlington 1.5V @ 4mA, 2A 40 V
BDW84C
BDW84C
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Central Semiconductor Corp
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 - - - - - - - - 15 A 750 @ 6A, 3V - - - - - - Through Hole - 130 W - - TO-218 - PNP - 100 V
KSE2955TTU
KSE2955TTU
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On Semiconductor
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 - - - - - - - - 10 A 20 @ 4A, 4V - - - 2MHz - - Through Hole 150°C (TJ) 600 mW - - TO-220-3 - PNP 8V @ 3.3A, 10A 60 V
KSB1015OTU
KSB1015OTU
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 - - - - - - - - 3 A 60 @ 500mA, 5V - - - 9MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F-3 - PNP 1V @ 300mA, 3A 60 V
KSB1015O
KSB1015O
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On Semiconductor
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 - - - - - - - - 3 A 60 @ 500mA, 5V - - - 9MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F-3 - PNP 1V @ 300mA, 3A 60 V
KSB596Y
KSB596Y
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On Semiconductor
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 - - - - - - - - 4 A 120 @ 500mA, 5V - - - 3MHz - - Through Hole 150°C (TJ) 30 W - - TO-220-3 - PNP 1.7V @ 300mA, 3A 80 V
KSB1015Y
KSB1015Y
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 9MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F-3 - PNP 1V @ 300mA, 3A 60 V
KSD1406OTU
KSD1406OTU
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 - - - - - - - - 3 A 60 @ 500mA, 5V - - - 3MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F-3 - NPN 1V @ 300mA, 3A 60 V
KSD1406YTU
KSD1406YTU
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 3MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F-3 - NPN 1V @ 300mA, 3A 60 V
KSD1408GTU
KSD1408GTU
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 - - - - - - - - 4 A 40 @ 500mA, 5V - - - 8MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F-3 - NPN 1.5V @ 300mA, 3A 80 V
KSD1406GTU
KSD1406GTU
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 - - - - - - - - 3 A 150 @ 500mA, 5V - - - 3MHz - - Through Hole 150°C (TJ) 25 W - - TO-220F-3 - NPN 1V @ 300mA, 3A 60 V
KSC3074YTU
KSC3074YTU
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 - - - - - - - - 5 A 120 @ 1A, 1V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - I-PAK - NPN 500mV @ 150mA, 3A 50 V
KSC3074OTU
KSC3074OTU
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 - - - - - - - - 5 A 70 @ 1A, 1V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - I-PAK - NPN 500mV @ 150mA, 3A 50 V
KSA614OTU
KSA614OTU
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 - - - - - - - - 3 A 70 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 25 W - - TO-220-3 - PNP 500mV @ 100mA, 1A 55 V
KSA614RTU
KSA614RTU
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 - - - - - - - - 3 A 40 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 25 W - - TO-220-3 - PNP 500mV @ 100mA, 1A 55 V
KSA614YTSTU
KSA614YTSTU
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 - - - - - - - - 3 A 120 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 25 W - - TO-220-3 - PNP 500mV @ 100mA, 1A 55 V
KSB546Y
KSB546Y
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 - - - - - - - - 2 A 120 @ 400mA, 10V - - - 5MHz - - Through Hole 150°C (TJ) 25 W - - TO-220-3 - PNP 1V @ 50mA, 500mA 150 V
KSB1366YTU
KSB1366YTU
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 9MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-3 - PNP 1V @ 200mA, 2A 60 V
KSA614R
KSA614R
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 - - - - - - - - 3 A 40 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 25 W - - TO-220-3 - PNP 500mV @ 100mA, 1A 55 V
KSB596OTU
KSB596OTU
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On Semiconductor
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 - - - - - - - - 4 A 70 @ 500mA, 5V - - - 3MHz - - Through Hole 150°C (TJ) 30 W - - TO-220-3 - PNP 1.7V @ 300mA, 3A 80 V
KSB546O
KSB546O
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 - - - - - - - - 2 A 70 @ 400mA, 10V - - - 5MHz - - Through Hole 150°C (TJ) 25 W - - TO-220-3 - PNP 1V @ 50mA, 500mA 150 V
KSB596O
KSB596O
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 - - - - - - - - 4 A 70 @ 500mA, 5V - - - 3MHz - - Through Hole 150°C (TJ) 30 W - - TO-220-3 - PNP 1.7V @ 300mA, 3A 80 V
PMXB65ENE,147
PMXB65ENE,147
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NXP Semiconductors
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 - - - - - - - - - - - - - - - - - - - - - - - - - -
KSB834O
KSB834O
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 - - - - - - - - 3 A 60 @ 500mA, 5V - - - 9MHz - - Through Hole 150°C (TJ) 1.5 W - - TO-220-3 - PNP 1V @ 300mA, 3A 60 V
KSB1366Y
KSB1366Y
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 9MHz - - Through Hole 150°C (TJ) 2 W - - TO-220F-3 - PNP 1V @ 200mA, 2A 60 V
KSD1362RTU
KSD1362RTU
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 - - - - - - - - 5 A 40 @ 5A, 5V - - - 10MHz - - Through Hole 150°C (TJ) 20 W - - TO-220F-3 - NPN 1V @ 500mA, 5A 70 V
FJP3305
FJP3305
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 - - - - - - - - 4 A 19 @ 1A, 5V - - - 4MHz - - Through Hole 150°C (TJ) 75 W - - TO-220-3 - NPN 1V @ 1A, 4A 400 V
FJP3305H1
FJP3305H1
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 - - - - - - - - 4 A 19 @ 1A, 5V - - - 4MHz - - Through Hole 150°C (TJ) 75 W - - TO-220-3 - NPN 1V @ 1A, 4A 400 V
KSA1244OTU
KSA1244OTU
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 - - - - - - - - 5 A 70 @ 1A, 1V - - - 60MHz - - Through Hole 150°C (TJ) 1 W - - I-PAK - PNP 500mV @ 150mA, 3A 50 V
KSA1244YTU
KSA1244YTU
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 - - - - - - - - 5 A 120 @ 1A, 1V - - - 60MHz - - Through Hole 150°C (TJ) 1 W - - I-PAK - PNP 500mV @ 150mA, 3A 50 V
KSD401FYTU
KSD401FYTU
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 - - - - - - - - 2 A 120 @ 400mA, 10V - - - 5MHz - - Through Hole 150°C (TJ) 25 W - - TO-220-3 - NPN 1V @ 50mA, 500mA 150 V
Showing 19851-19900 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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