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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
PDTA143EQA147
PDTA143EQA147
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NXP Semiconductors
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BCV27_D87Z
BCV27_D87Z
On Semiconductor
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 1.2 A 20000 @ 100mA, 5V 220MHz Surface Mount -55°C ~ 150°C (TJ) 350 mW SOT-23-3 NPN - Darlington 1V @ 100µA, 100mA 30 V
2N5210NMBU
2N5210NMBU
Download Datasheet for 2N5210NMBU
On Semiconductor
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 100 mA 200 @ 100µA, 5V 30MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 700mV @ 1mA, 10mA 50 V
2N5210TAR
2N5210TAR
Download Datasheet for 2N5210TAR
On Semiconductor
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 100 mA 200 @ 100µA, 5V 30MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 700mV @ 1mA, 10mA 50 V
2N6428ABU
2N6428ABU
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On Semiconductor
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 200 mA 250 @ 100µA, 5V 700MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 600mV @ 5mA, 100mA 50 V
2N6428ATA
2N6428ATA
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On Semiconductor
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 200 mA 250 @ 100µA, 5V 700MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 600mV @ 5mA, 100mA 50 V
BC238ABU
BC238ABU
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On Semiconductor
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 100 mA 120 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BC238ATA
BC238ATA
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On Semiconductor
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 100 mA 120 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BC238ATF
BC238ATF
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On Semiconductor
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 100 mA 120 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BC238BU
BC238BU
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On Semiconductor
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 100 mA 120 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BC238CTA
BC238CTA
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 100 mA 380 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BC238TAR
BC238TAR
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On Semiconductor
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 100 mA 120 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BDX54-S
BDX54-S
Bourns
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 8 A 750 @ 3A, 3V - Through Hole -65°C ~ 150°C (TJ) 2 W TO-220 PNP - Darlington 2V @ 12mA, 3A 45 V
BC548TA
BC548TA
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On Semiconductor
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC548TAR
BC548TAR
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC548TF
BC548TF
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On Semiconductor
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC548TFR
BC548TFR
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On Semiconductor
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC549BU
BC549BU
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On Semiconductor
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC549TAR
BC549TAR
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On Semiconductor
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC549TF
BC549TF
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC549TFR
BC549TFR
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC550BU
BC550BU
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 45 V
BC847BNMMTF
BC847BNMMTF
On Semiconductor
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 100 mA 200 @ 2mA, 5V 300MHz Surface Mount 150°C (TJ) 310 mW SOT-23-3 NPN 600mV @ 5mA, 100mA 45 V
BD1356S
BD1356S
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On Semiconductor
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 1.5 A 40 @ 150mA, 2V - Through Hole 150°C (TJ) 1.25 W TO-126-3 NPN 500mV @ 50mA, 500mA 45 V
BD1376S
BD1376S
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On Semiconductor
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 1.5 A 40 @ 150mA, 2V - Through Hole 150°C (TJ) 1.25 W TO-126-3 NPN 500mV @ 50mA, 500mA 60 V
BD1376STU
BD1376STU
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On Semiconductor
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 1.5 A 40 @ 150mA, 2V - Through Hole 150°C (TJ) 1.25 W TO-126-3 NPN 500mV @ 50mA, 500mA 60 V
BD158STU
BD158STU
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On Semiconductor
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 500 mA 30 @ 50mA, 10V - Through Hole - 20 W TO-126-3 NPN - 300 V
BD1756STU
BD1756STU
On Semiconductor
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 3 A 40 @ 150mA, 2V 3MHz Through Hole 150°C (TJ) 30 W TO-126-3 NPN 800mV @ 100mA, 1A 45 V
BD239TU
BD239TU
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On Semiconductor
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 2 A 15 @ 1A, 4V - Through Hole 150°C (TJ) 30 W TO-220-3 NPN 700mV @ 200mA, 1A 45 V
BD241TU
BD241TU
On Semiconductor
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 3 A 25 @ 1A, 4V - Through Hole 150°C (TJ) 40 W TO-220-3 NPN 1.2V @ 600mA, 3A 45 V
BD243A
BD243A
On Semiconductor
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 6 A 15 @ 3A, 4V - Through Hole 150°C (TJ) 65 W TO-220-3 NPN 1.5V @ 1A, 6A 60 V
BD243ATU
BD243ATU
On Semiconductor
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 6 A 15 @ 3A, 4V - Through Hole 150°C (TJ) 65 W TO-220-3 NPN 1.5V @ 1A, 6A 60 V
BD243CTU
BD243CTU
On Semiconductor
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 6 A 15 @ 3A, 4V - Through Hole 150°C (TJ) 65 W TO-220-3 NPN 1.5V @ 1A, 6A 100 V
BD243TU
BD243TU
On Semiconductor
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 6 A 15 @ 3A, 4V - Through Hole 150°C (TJ) 65 W TO-220-3 NPN 1.5V @ 1A, 6A 45 V
BD37510STU
BD37510STU
Download Datasheet for BD37510STU
On Semiconductor
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 2 A 63 @ 150mA, 2V - Through Hole 150°C (TJ) 25 W TO-126-3 NPN 1V @ 100mA, 1A 45 V
BD37516STU
BD37516STU
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On Semiconductor
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 2 A 100 @ 150mA, 2V - Through Hole 150°C (TJ) 25 W TO-126-3 NPN 1V @ 100mA, 1A 45 V
BD37525STU
BD37525STU
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 2 A 150 @ 150mA, 2V - Through Hole 150°C (TJ) 25 W TO-126-3 NPN 1V @ 100mA, 1A 45 V
BD3756STU
BD3756STU
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 2 A 40 @ 150mA, 2V - Through Hole 150°C (TJ) 25 W TO-126-3 NPN 1V @ 100mA, 1A 45 V
BD37710STU
BD37710STU
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On Semiconductor
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 2 A 63 @ 150mA, 2V - Through Hole 150°C (TJ) 25 W TO-126-3 NPN 1V @ 100mA, 1A 60 V
BDX53TU
BDX53TU
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On Semiconductor
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 8 A 750 @ 3A, 3V - Through Hole 150°C (TJ) 60 W TO-220-3 NPN - Darlington 2V @ 12mA, 3A 45 V
BDX54ATU
BDX54ATU
On Semiconductor
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 8 A 750 @ 3A, 3V - Through Hole 150°C (TJ) 60 W TO-220-3 PNP - Darlington 2V @ 12mA, 3A 60 V
BDX54TU
BDX54TU
On Semiconductor
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 8 A 750 @ 3A, 3V - Through Hole 150°C (TJ) 60 W TO-220-3 PNP - Darlington 2V @ 12mA, 3A 45 V
BU407HTU
BU407HTU
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 7 A - 10MHz Through Hole 150°C (TJ) 60 W TO-220-3 NPN 1V @ 800mA, 5A 150 V
BU408
BU408
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 7 A - 10MHz Through Hole 150°C (TJ) 60 W TO-220-3 NPN 1V @ 1.2A, 6A 200 V
BUT12ATU
BUT12ATU
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 8 A - - Through Hole 150°C (TJ) 100 W TO-220-3 NPN 1.5V @ 1.2A, 6A 450 V
BUT12TU
BUT12TU
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 8 A - - Through Hole 150°C (TJ) 100 W TO-220-3 NPN 1.5V @ 1.2A, 6A 400 V
2N6518BU
2N6518BU
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 500 mA 45 @ 50mA, 10V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 1V @ 5mA, 50mA 250 V
BD13810S
BD13810S
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 1.5 A 63 @ 150mA, 2V - Through Hole 150°C (TJ) 1.25 W TO-126-3 PNP 500mV @ 50mA, 500mA 60 V
BDX34BTSTU
BDX34BTSTU
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 10 A 750 @ 3A, 3V - Through Hole 150°C (TJ) 70 W TO-220-3 PNP 2.5V @ 6mA, 3A 80 V
BU806
BU806
On Semiconductor
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 8 A - - Through Hole 150°C (TJ) 60 W TO-220-3 NPN - Darlington 1.5V @ 50mA, 5A 200 V
Showing 19951-20000 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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