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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
JANS2N3741U4
JANS2N3741U4
Microchip Technology
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 - - - - - - - - 10 µA 30 @ 250mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 25 W - - U4 - PNP 600mV @ 1.25mA, 1A 80 V
JANS2N3762L
JANS2N3762L
Microchip Technology
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 - - - - - - - - 1.5 A 40 @ 500mA, 1V - - - - - - Through Hole -55°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 900mV @ 100mA, 1A 40 V
JANS2N3762U4
JANS2N3762U4
Microchip Technology
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 - - - - - - - - 1.5 A - - - - - - - Surface Mount 200°C (TJ) - - - U4 - PNP - 40 V
JANS2N3763U4
JANS2N3763U4
Microchip Technology
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 - - - - - - - - 1.5 A 20 @ 1A, 1.5V - - - - - - Surface Mount -55°C ~ 200°C (TJ) 1 W - - U4 - PNP 900mV @ 100mA, 1A 60 V
JANS2N3764
JANS2N3764
Microchip Technology
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 - - - - - - - - 1.5 A 30 @ 1A, 1.5V - - - - - - Through Hole -55°C ~ 200°C (TJ) 500 mW - - TO-46 (TO-206AB) - PNP 900mV @ 100mA, 1A 40 V
JANS2N3764L
JANS2N3764L
Microchip Technology
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2SJ550S-E
2SJ550S-E
Renesas
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JANS2N3764U4
JANS2N3764U4
Microchip Technology
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 - - - - - - - - 1.5 A 30 @ 1A, 1.5V - - - - - - Surface Mount -55°C ~ 200°C (TJ) 500 mW - - U4 - PNP 900mV @ 100mA, 1A 40 V
JANS2N3765
JANS2N3765
Microchip Technology
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 - - - - - - - - 1.5 A 40 @ 500mA, 1V - - - - - - Through Hole -55°C ~ 200°C (TJ) 500 mW - - TO-46 (TO-206AB) - PNP 900mV @ 100mA, 1A 60 V
JANS2N3765L
JANS2N3765L
Microchip Technology
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JANS2N3765U4
JANS2N3765U4
Microchip Technology
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 - - - - - - - - 1.5 A 40 @ 500mA, 1V - - - - - - Surface Mount -55°C ~ 200°C (TJ) 500 mW - - U4 - PNP 900mV @ 100mA, 1A 60 V
JANS2N4033UA
JANS2N4033UA
Microchip Technology
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UA - PNP 1V @ 100mA, 1A 80 V
JANS2N5002
JANS2N5002
Microchip Technology
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 - - - - - - - - 50 µA 30 @ 2.5A, 5V - - - - - - Stud Mount -65°C ~ 200°C (TJ) 2 W - - TO-59 - NPN 1.5V @ 500mA, 5A 80 V
JANS2N5003
JANS2N5003
Microchip Technology
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 - - - - - - - - 50 µA 30 @ 2.5A, 5V - - - - - - Chassis, Stud Mount -65°C ~ 200°C (TJ) 2 W - - TO-59/I - PNP 1.5V @ 500mA, 5A 80 V
JANS2N5237S
JANS2N5237S
Microchip Technology
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 - - - - - - - - 10 µA 40 @ 5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 2.5V @ 1A, 10A 120 V
JANS2N5238
JANS2N5238
Microchip Technology
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 - - - - - - - - 10 µA 40 @ 5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 2.5V @ 1A, 10A 170 V
JANS2N5238S
JANS2N5238S
Microchip Technology
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 - - - - - - - - 10 µA 40 @ 5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 2.5V @ 1A, 10A 170 V
JANS2N5415S
JANS2N5415S
Microchip Technology
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 - - - - - - - - 50 µA 30 @ 50mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 750 mW - - TO-39 (TO-205AD) - PNP 2V @ 5mA, 50mA 200 V
JANS2N5415U4
JANS2N5415U4
Microchip Technology
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 - - - - - - - - 50 µA 30 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 2V @ 5mA, 50mA 200 V
JANS2N6676
JANS2N6676
Microchip Technology
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 - - - - - - - - 15 A 15 @ 1A, 3V - - - - - - Through Hole -65°C ~ 200°C (TJ) 6 W - - TO-3 - NPN 1V @ 3A, 15A 300 V
JANS2N6676T1
JANS2N6676T1
Microchip Technology
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 - - - - - - - - 15 A - - - - - - - Through Hole 200°C (TJ) - - - TO-254 - NPN - 300 V
JANS2N7373
JANS2N7373
Microchip Technology
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 - - - - - - - - 50 µA 70 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 4 W - - TO-254 - NPN 1.5V @ 500mA, 5A 80 V
JANS2N930
JANS2N930
Microchip Technology
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 - - - - - - - - 30 mA 100 @ 10µA, 5V - - - - - - Through Hole -55°C ~ 200°C (TJ) 300 mW - - TO-18 (TO-206AA) - NPN 1V @ 500µA, 10mA 45 V
JANS2N930UB
JANS2N930UB
Microchip Technology
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 - - - - - - - - 30 mA - - - - - - - Surface Mount 200°C (TJ) - - - UB - NPN - 45 V
BDX33DS
BDX33DS
Harris Semiconductor
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 - - - - - - - - 10 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2.5V @ 6mA, 3A 120 V
JANTX2N1714S
JANTX2N1714S
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-39 (TO-205AD) - NPN - 60 V
JANTX2N1715
JANTX2N1715
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 100 V
JANTX2N1715S
JANTX2N1715S
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-39 (TO-205AD) - NPN - 100 V
JANTX2N1716
JANTX2N1716
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 60 V
JANTX2N1716S
JANTX2N1716S
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-39 (TO-205AD) - NPN - 60 V
JANTX2N1717
JANTX2N1717
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 100 V
JANTX2N1717S
JANTX2N1717S
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-39 (TO-205AD) - NPN - 100 V
JANTX2N2604
JANTX2N2604
Microchip Technology
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 - - - - - - - - 30 mA 60 @ 500µA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 400 mW - - TO-46 (TO-206AB) - PNP 300mV @ 500µA, 10mA 60 V
JANTX2N2604UB
JANTX2N2604UB
Microchip Technology
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 - - - - - - - - 30 mA 60 @ 500µA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 400 mW - - UB - PNP 300mV @ 500µA, 10mA 60 V
JANTX2N2605UB
JANTX2N2605UB
Microchip Technology
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 - - - - - - - - 30 mA 150 @ 500µA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 400 mW - - UB - PNP 300mV @ 500µA, 10mA 60 V
JANTX2N2812
JANTX2N2812
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Stud Mount 200°C (TJ) - - - TO-61 - NPN - 60 V
JANTX2N2814
JANTX2N2814
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Stud Mount 200°C (TJ) - - - TO-61 - NPN - 80 V
JANTX2N2946AUB
JANTX2N2946AUB
Microchip Technology
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 - - - - - - - - 100 mA 50 @ 1mA, 500mV - - - - - - Surface Mount -65°C ~ 200°C (TJ) 400 mW - - UB - PNP - 35 V
JANTX2N3250AUB
JANTX2N3250AUB
Microchip Technology
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 - - - - - - - - 200 mA 50 @ 10mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UB - PNP 500mV @ 5mA, 50mA 60 V
JANTX2N333
JANTX2N333
Microchip Technology
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 - - - - - - - - 10 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 45 V
JANTX2N333A
JANTX2N333A
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 45 V
JANTX2N335
JANTX2N335
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 45 V
JANTX2N335A
JANTX2N335A
Microchip Technology
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 - - - - - - - - 10 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 45 V
JANTX2N336
JANTX2N336
Microchip Technology
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 - - - - - - - - 10 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 45 V
JANTX2N336A
JANTX2N336A
Microchip Technology
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 - - - - - - - - 10 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 45 V
JANTX2N3421U4
JANTX2N3421U4
Microchip Technology
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 - - - - - - - - 3 A 40 @ 1A, 2V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 500mV @ 200mA, 2A 80 V
JANTX2N3467L
JANTX2N3467L
Microchip Technology
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 - - - - - - - - 1 A 40 @ 500mA, 1V - - - 175MHz - - Through Hole -55°C ~ 175°C (TJ) 1 W - - TO-5 - PNP 1.2V @ 100mA, 1A 40 V
JANTX2N3468L
JANTX2N3468L
Microchip Technology
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 - - - - - - - - 1 A 25 @ 500mA, 1V - - - 150MHz - - Through Hole -55°C ~ 175°C (TJ) 1 W - - TO-5 - PNP 1.2V @ 100mA, 1A 50 V
JANTX2N3498U4
JANTX2N3498U4
Microchip Technology
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 - - - - - - - - 500 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 600mV @ 30mA, 300mA 100 V
JANTX2N3499U4
JANTX2N3499U4
Microchip Technology
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 - - - - - - - - 500 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - NPN 600mV @ 30mA, 300mA 100 V
Showing 20051-20100 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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