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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BD136-6-BP
BD136-6-BP
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 - - - - - - - - 1.5 A 40 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - PNP 500mV @ 50mA, 500mA 45 V
BD137-10-BP
BD137-10-BP
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 - - - - - - - - 1.5 A 63 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 500mV @ 50mA, 500mA 60 V
BD137-16-BP
BD137-16-BP
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 - - - - - - - - 1.5 A 100 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 500mV @ 50mA, 500mA 60 V
BD137-6-BP
BD137-6-BP
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 - - - - - - - - 1.5 A 40 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 500mV @ 50mA, 500mA 60 V
BD138-10-BP
BD138-10-BP
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 - - - - - - - - 1.5 A 63 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - PNP 500mV @ 50mA, 500mA 60 V
BD138-16-BP
BD138-16-BP
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 - - - - - - - - 1.5 A 100 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - PNP 500mV @ 50mA, 500mA 60 V
BD138-6-BP
BD138-6-BP
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 - - - - - - - - 1.5 A 40 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 12.5 W - - TO-126 - PNP 500mV @ 50mA, 500mA 60 V
BD139-10-BP
BD139-10-BP
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 - - - - - - - - 1.5 A 63 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 500mV @ 50mA, 500mA 80 V
BD139-6-BP
BD139-6-BP
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 - - - - - - - - 1.5 A 40 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 500mV @ 50mA, 500mA 80 V
BD140-10-BP
BD140-10-BP
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 - - - - - - - - 1.5 A 63 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - PNP 500mV @ 50mA, 500mA 80 V
BD140-6-BP
BD140-6-BP
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 - - - - - - - - 1.5 A 40 @ 150mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - PNP 500mV @ 50mA, 500mA 80 V
BD233-BP
BD233-BP
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 - - - - - - - - 2 A 40 @ 150mA, 2V - - - 3MHz - - Through Hole 150°C (TJ) 1.25 W - - TO-126 - NPN 600mV @ 100mA, 1A 45 V
BD235-BP
BD235-BP
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 - - - - - - - - 2 A 40 @ 150mA, 2V - - - 3MHz - - Through Hole 150°C (TJ) 1.25 W - - TO-126 - NPN 600mV @ 100mA, 1A 60 V
BD237-BP
BD237-BP
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 - - - - - - - - 2 A 40 @ 150mA, 2V - - - 3MHz - - Through Hole 150°C (TJ) 1.25 W - - TO-126 - NPN 600mV @ 100mA, 1A 80 V
BD433-BP
BD433-BP
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 - - - - - - - - 4 A 50 @ 2A, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 500mV @ 200mA, 2A 22 V
BD434-BP
BD434-BP
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 - - - - - - - - 4 A 50 @ 2A, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - PNP 500mV @ 200mA, 2A 22 V
BD435-BP
BD435-BP
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 - - - - - - - - 4 A 50 @ 2A, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 500mV @ 200mA, 2A 32 V
BD436-BP
BD436-BP
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 - - - - - - - - 4 A 50 @ 2A, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - PNP 500mV @ 200mA, 2A 32 V
BD437-BP
BD437-BP
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 - - - - - - - - 4 A 40 @ 2A, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 600mV @ 200mA, 2A 45 V
BD438-BP
BD438-BP
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 - - - - - - - - 4 A 40 @ 2A, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - PNP 600mV @ 200mA, 2A 45 V
BD439-BP
BD439-BP
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 - - - - - - - - 4 A 40 @ 500mA, 1V - - - 3MHz - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 800mV @ 300mA, 3A 60 V
BDW93B-BP
BDW93B-BP
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 - - - - - - - - 12 A 1000 @ 3A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 80 W - - TO-220AB - NPN 3V @ 100mA, 10A 80 V
BDX33D-BP
BDX33D-BP
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 - - - - - - - - 10 A 750 @ 3A, 3V - - - - - - Through Hole -55°C ~ 150°C (TJ) 2 W - - TO-220AB - NPN - Darlington 2.5V @ 6mA, 3A 100 V
D1815-R-BP
D1815-R-BP
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 180MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-251 - NPN 400mV @ 150mA, 1.5A 100 V
KSD1408-Y-BP
KSD1408-Y-BP
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 - - - - - - - - 4 A 120 @ 500mA, 5V - - - 8MHz - - Through Hole -55°C ~ 150°C (TJ) 2 W - - TO-220F - NPN 1.5V @ 300mA, 3A 80 V
MJE13002-BP
MJE13002-BP
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 - - - - - - - - 1 A 9 @ 200mA, 10V - - - 5MHz - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 800mV @ 40mA, 200mA 400 V
MJE13003A-BP
MJE13003A-BP
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 - - - - - - - - 1.5 A 8 @ 500mA, 5V - - - 5MHz - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-126 - NPN 1V @ 250mA, 1A 400 V
MJE13003D-BP
MJE13003D-BP
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 - - - - - - - - 1.5 A 8 @ 500mA, 5V - - - 5MHz - - Through Hole -55°C ~ 150°C (TJ) 1.25 W - - TO-251 - NPN 1V @ 250mA, 1A 400 V
MJE13005-BP
MJE13005-BP
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 - - - - - - - - 4 A 10 @ 1A, 5V - - - 5MHz - - Through Hole -55°C ~ 150°C (TJ) 1.5 W - - TO-220AB - NPN 600mV @ 500mA, 2A 400 V
MJE13005F-BP
MJE13005F-BP
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 - - - - - - - - 4 A 10 @ 1A, 5V - - - 5MHz - - Through Hole -55°C ~ 150°C (TJ) 2 W - - ITO-220AB - NPN 300mV @ 200mA, 1A 420 V
MJE13007-BP
MJE13007-BP
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 - - - - - - - - 8 A 25 @ 2A, 5V - - - 4MHz - - Through Hole -55°C ~ 150°C (TJ) 2 W - - TO-220AB - NPN 1V @ 400mA, 2A 400 V
MJE13007F-BP
MJE13007F-BP
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 - - - - - - - - 8 A 8 @ 2A, 5V - - - 4MHz - - Through Hole -55°C ~ 150°C (TJ) 2 W - - ITO-220AB - NPN 1V @ 400mA, 2A 400 V
MJE2955-BP
MJE2955-BP
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 - - - - - - - - 10 A 20 @ 4A, 4V - - - 2MHz - - Through Hole -55°C ~ 150°C (TJ) 2 W - - TO-220AB - PNP 1.1V @ 400mA, 4A 60 V
MJE3055-BP
MJE3055-BP
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 - - - - - - - - 10 A 20 @ 4A, 4V - - - 2MHz - - Through Hole -55°C ~ 150°C (TJ) 2 W - - TO-220AB - NPN 1.2V @ 3.3A, 10A 60 V
TIP47-BP
TIP47-BP
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 - - - - - - - - 1 A 30 @ 300mA, 10V - - - 10MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220AB - NPN 1V @ 200mA, 1A 250 V
CP245-CEN1309A-CM
CP245-CEN1309A-CM
Central Semiconductor Corp
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2N5038
2N5038
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Central Semiconductor Corp
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 - - - - - - - - 20 A 50 @ 2A, 5V - - - 60MHz - - Through Hole -65°C ~ 200°C (TJ) 140 W - - TO-3 - NPN 2.5V @ 5A, 20A 90 V
2N5039
2N5039
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Central Semiconductor Corp
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 - - - - - - - - 20 A 30 @ 2A, 5V - - - 60MHz - - Through Hole -65°C ~ 200°C (TJ) 140 W - - TO-3 - NPN 2.5V @ 5A, 20A 75 V
CEN1320 BK
CEN1320 BK
Central Semiconductor Corp
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CEN1320 TR
CEN1320 TR
Central Semiconductor Corp
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CEN1372 BK
CEN1372 BK
Central Semiconductor Corp
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CEN1372 TR
CEN1372 TR
Central Semiconductor Corp
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CTLT853-M833S BK
CTLT853-M833S BK
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Central Semiconductor Corp
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 - - - - - - - - 6 A 100 @ 2A, 2V - - - 190MHz - - Surface Mount -65°C ~ 150°C (TJ) 2.5 W - - TLM833S - NPN 340mV @ 500mA, 5A 100 V
CTLT853-M833S TR
CTLT853-M833S TR
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Central Semiconductor Corp
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 - - - - - - - - 6 A 100 @ 2A, 2V - - - 190MHz - - Surface Mount -65°C ~ 150°C (TJ) 2.5 W - - TLM833S - NPN 340mV @ 500mA, 5A 100 V
CTLT953-M833S BK
CTLT953-M833S BK
Download Datasheet for CTLT953-M833S BK
Central Semiconductor Corp
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 - - - - - - - - 5 A 100 @ 1A, 1V - - - 150MHz - - Surface Mount -65°C ~ 150°C (TJ) 2.5 W - - TLM833S - PNP 420mV @ 400mA, 4A 100 V
CTLT953-M833S TR
CTLT953-M833S TR
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Central Semiconductor Corp
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 - - - - - - - - 5 A 100 @ 1A, 1V - - - 150MHz - - Surface Mount -65°C ~ 150°C (TJ) 2.5 W - - TLM833S - PNP 420mV @ 400mA, 4A 100 V
CP219-2N5338-WN
CP219-2N5338-WN
Central Semiconductor Corp
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 - - - - - - - - 5 A 30 @ 2A, 2V - - - 30MHz - - Surface Mount -65°C ~ 150°C (TJ) - - - Die - NPN 1.2V @ 500mA, 5A 100 V
CP219-2N5339-CM
CP219-2N5339-CM
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Central Semiconductor Corp
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 - - - - - - - - 5 A 60 @ 2A, 2V - - - 30MHz - - Surface Mount -65°C ~ 150°C (TJ) 6 W - - Die - NPN 1.2V @ 500mA, 5A 100 V
BUX11 PBFREE
BUX11 PBFREE
Central Semiconductor Corp
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 - - - - - - - - 20 A - - - - 8MHz - - - - - - - - - NPN - -
CP219-2N5339-CT
CP219-2N5339-CT
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Central Semiconductor Corp
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 - - - - - - - - 5 A 60 @ 2A, 2V - - - 30MHz - - Surface Mount -65°C ~ 150°C (TJ) 6 W - - Die - NPN 1.2V @ 500mA, 5A 100 V
Showing 20151-20200 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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