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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
FJX945GTF-ON
FJX945GTF-ON
On Semiconductor
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2SC2839E-SPA-AC-SY
2SC2839E-SPA-AC-SY
Sanyo Denki
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PMST5089,115
PMST5089,115
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 400 @ 100µA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 500mV @ 1mA, 10mA 25 V
PMST2222,115
PMST2222,115
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Nexperia USA Inc.
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 250MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 1.6V @ 50mA, 500mA 30 V
BSR16/DG/B3215
BSR16/DG/B3215
NXP Semiconductors
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BCX18,235
BCX18,235
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 620mV @ 50mA, 500mA 25 V
BC849BW,115
BC849BW,115
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 600mV @ 5mA, 100mA 30 V
BC856BW-AQ
BC856BW-AQ
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Diotec Semiconductor
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP 650mV @ 5mA, 100mA 65 V
BC856AQC-QZ
BC856AQC-QZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 360 mW - - DFN1412D-3 - PNP 650mV @ 5mA, 100mA 65 V
BCW30,235
BCW30,235
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 215 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 150mV @ 2.5mA, 50mA 32 V
PMST6428,115
PMST6428,115
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 250 @ 100µA, 5V - - - 700MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 600mV @ 5mA, 100mA 50 V
BC817-16QC-QZ
BC817-16QC-QZ
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 380 mW - - DFN1412D-3 - NPN 700mV @ 50mA, 500mA 45 V
BC807K-25R
BC807K-25R
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 700mV @ 50mA, 500mA 45 V
BC817K-25R
BC817K-25R
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 700mV @ 50mA, 500mA 45 V
BC817K-16R
BC817K-16R
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 700mV @ 50mA, 500mA 45 V
PMBT3904QAZ
PMBT3904QAZ
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Nexperia USA Inc.
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount 150°C (TJ) 440 mW - - DFN1010D-3 - NPN 300mV @ 5mA, 50mA 40 V
BCV47TC
BCV47TC
Diodes Incorporated
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 170MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23-3 - NPN - Darlington 1V @ 100µA, 100mA 60 V
MMS8050HE3-L-TP
MMS8050HE3-L-TP
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Micro Commercial
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 - - - - - - - - 500 mA 120 @ 50mA, 1V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 600mV @ 50mA, 500mA 25 V
MMS9014HE3-L-TP
MMS9014HE3-L-TP
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Micro Commercial
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 - - - - - - - - 100 mA 200 @ 1mA, 5V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - NPN 300mV @ 5mA, 100mA 45 V
MMS9015HE3-H-TP
MMS9015HE3-H-TP
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Micro Commercial
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 - - - - - - - - 100 mA 450 @ 1mA, 5V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-23 - PNP 300mV @ 10mA, 100mA 45 V
MMS9012HE3-L-TP
MMS9012HE3-L-TP
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Micro Commercial
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 - - - - - - - - 500 mA 120 @ 50mA, 1V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - PNP 600mV @ 50mA, 500mA 25 V
BCW61B,215
BCW61B,215
Download Datasheet for BCW61B,215
Nexperia USA Inc.
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 550mV @ 1.25mA, 50mA 32 V
MMBT2132T1
MMBT2132T1
On Semiconductor
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KSC388YBU
KSC388YBU
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On Semiconductor
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 - - - - - - - - 50 mA 20 @ 12.5mA, 12.5V - - - 300MHz - - Through Hole 150°C (TJ) 300 mW - - TO-92-3 - NPN 200mV @ 1.5mA, 15mA 25 V
KSC815YBU
KSC815YBU
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On Semiconductor
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 - - - - - - - - 200 mA 120 @ 50mA, 1V - - - 200MHz - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - NPN 400mV @ 15mA, 150mA 45 V
KSA709YTA
KSA709YTA
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On Semiconductor
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 - - - - - - - - 700 mA 120 @ 50mA, 2V - - - 50MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - PNP 400mV @ 20mA, 200mA 150 V
KSC1815GRTA
KSC1815GRTA
On Semiconductor
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 - - - - - - - - 150 mA 200 @ 2mA, 6V - - - 80MHz - - Through Hole 150°C (TJ) 400 mW - - TO-92-3 - NPN 250mV @ 10mA, 100mA 50 V
2N6518TA
2N6518TA
Download Datasheet for 2N6518TA
On Semiconductor
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 - - - - - - - - 500 mA 45 @ 50mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1V @ 5mA, 50mA 250 V
TN5415A
TN5415A
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On Semiconductor
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 - - - - - - - - 100 mA 30 @ 50mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - PNP 2.5V @ 5mA, 50mA 200 V
KSP14TA
KSP14TA
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On Semiconductor
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
KSC945GBU
KSC945GBU
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On Semiconductor
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 - - - - - - - - 150 mA 200 @ 1mA, 6V - - - 300MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - NPN 300mV @ 10mA, 100mA 50 V
KSC2328AOBU
KSC2328AOBU
Download Datasheet for KSC2328AOBU
On Semiconductor
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 - - - - - - - - 2 A 100 @ 500mA, 2V - - - 120MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 2V @ 30mA, 1.5A 30 V
KSB1116YTA
KSB1116YTA
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On Semiconductor
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 - - - - - - - - 1 A 135 @ 100mA, 2V - - - 120MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-3 - PNP 300mV @ 50mA, 1A 50 V
MMBC1654N7LT1
MMBC1654N7LT1
On Semiconductor
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KSB1116SYTA
KSB1116SYTA
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 - - - - - - - - 1 A 135 @ 100mA, 2V - - - 120MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-3 - PNP 300mV @ 50mA, 1A 50 V
KST3904LGEMTF
KST3904LGEMTF
Download Datasheet for KST3904LGEMTF
On Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount - 350 mW - - SOT-23-3 - NPN 300mV @ 5mA, 50mA 40 V
KSC2310YBU
KSC2310YBU
Download Datasheet for KSC2310YBU
On Semiconductor
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 - - - - - - - - 50 mA 120 @ 10mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - NPN 500mV @ 1mA, 10mA 150 V
KSB564AYTA
KSB564AYTA
Download Datasheet for KSB564AYTA
On Semiconductor
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 - - - - - - - - 1 A 120 @ 100mA, 1V - - - 110MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - PNP 500mV @ 100mA, 1A 25 V
BCW 60FF E6327
BCW 60FF E6327
Infineon Technologies
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 - - - - - - - - 100 mA 250 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 550mV @ 1.25mA, 50mA 32 V
BCX17/DG/B4215
BCX17/DG/B4215
NXP Semiconductors
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BCX54-10
BCX54-10
Infineon Technologies
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 - - - - - - - - 1 A 25 @ 500mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT89-4-2 - - 500mV @ 50mA, 500mA 45 V
BCX55-10E6327
BCX55-10E6327
Infineon Technologies
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BCX54E6327
BCX54E6327
Infineon Technologies
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DTA144TXV3T1
DTA144TXV3T1
On Semiconductor
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BC817K-25WH6327
BC817K-25WH6327
Infineon Technologies
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 500 mW - - PG-SOT323-3-1 - - 700mV @ 50mA, 500mA 45 V
2SA1331-5-TB-E
2SA1331-5-TB-E
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EMF18XV6T5
EMF18XV6T5
On Semiconductor
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2SA1481E-AC
2SA1481E-AC
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2SA1508-TB-E
2SA1508-TB-E
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EMF23XV6T5
EMF23XV6T5
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Showing 20201-20250 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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