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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SC3467E-AE
2SC3467E-AE
On Semiconductor
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ZXTN25100DGQTA
ZXTN25100DGQTA
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Diodes Incorporated
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 3 A 300 @ 10mA, 2V 175MHz Surface Mount -55°C ~ 150°C (TJ) 1.2 W SOT-223-3 NPN 500mV @ 600mA, 3A 100 V
ZXTN2007GTA
ZXTN2007GTA
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Diodes Incorporated
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 7 A 100 @ 1A, 1V 140MHz Surface Mount -55°C ~ 150°C (TJ) 3 W SOT-223-3 NPN 220mV @ 300mA, 6.5A 30 V
2SB1229S-AA
2SB1229S-AA
On Semiconductor
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ZX5T853GTA
ZX5T853GTA
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Diodes Incorporated
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 6 A 100 @ 2A, 2V 130MHz Surface Mount -55°C ~ 150°C (TJ) 3 W SOT-223-3 NPN 220mV @ 500mA, 5A 100 V
PN2907A PBFREE
PN2907A PBFREE
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Central Semiconductor Corp
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 600 mA 100 @ 150mA, 10V 200MHz Through Hole -65°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 1.6V @ 50mA, 500mA 60 V
2N3904 PBFREE
2N3904 PBFREE
Download Datasheet for 2N3904 PBFREE
Central Semiconductor Corp
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 50nA (ICBO) 100 @ 10mA, 1V 300MHz Through Hole -65°C ~ 150°C (TJ) - TO-92-3 NPN - 40 V
2N3906 PBFREE
2N3906 PBFREE
Download Datasheet for 2N3906 PBFREE
Central Semiconductor Corp
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 50nA (ICBO) 100 @ 10mA, 1V 250MHz Through Hole -65°C ~ 150°C (TJ) - TO-92-3 PNP - 40 V
2N3905 PBFREE
2N3905 PBFREE
Download Datasheet for 2N3905 PBFREE
Central Semiconductor Corp
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 50nA (ICBO) 50 @ 10mA, 1V 200MHz Through Hole -65°C ~ 150°C (TJ) - TO-92-3 PNP - 40 V
KSP43BU
KSP43BU
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On Semiconductor
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 500 mA 40 @ 30mA, 10V 50MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 500mV @ 2mA, 20mA 200 V
CZT2222A TR PBFREE
CZT2222A TR PBFREE
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Central Semiconductor Corp
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 600 mA 100 @ 150mA, 10V 300MHz Surface Mount -65°C ~ 150°C (TJ) 2 W SOT-223 NPN 1V @ 50mA, 500mA 40 V
MPSA92 PBFREE
MPSA92 PBFREE
Download Datasheet for MPSA92 PBFREE
Central Semiconductor Corp
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 500 mA 25 @ 30mA, 10V 50MHz Through Hole -65°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 2mA, 20mA 300 V
2N4124 PBFREE
2N4124 PBFREE
Download Datasheet for 2N4124 PBFREE
Central Semiconductor Corp
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 50nA (ICBO) 120 @ 2mA, 1V 300MHz Through Hole -65°C ~ 150°C (TJ) - TO-92-3 NPN - 25 V
MPSA63 PBFREE
MPSA63 PBFREE
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Central Semiconductor Corp
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole -65°C ~ 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 20 V
TTC004B,Q
TTC004B,Q
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Toshiba
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 1.5 A 140 @ 100mA, 5V 100MHz Through Hole 150°C (TJ) 10 W TO-126N NPN 500mV @ 50mA, 500mA 160 V
2N3702 PBFREE
2N3702 PBFREE
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Central Semiconductor Corp
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 100nA (ICBO) 60 @ 50µA, 5V 100MHz Through Hole - - TO-92-3 PNP - 25 V
2N4126 PBFREE
2N4126 PBFREE
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Central Semiconductor Corp
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 50nA (ICBO) 120 @ 2mA, 1V 250MHz Through Hole -65°C ~ 150°C (TJ) - TO-92-3 PNP - 25 V
CZT5401 TR PBFREE
CZT5401 TR PBFREE
Download Datasheet for CZT5401 TR PBFREE
Central Semiconductor Corp
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 600 mA 60 @ 10mA, 5V 300MHz Surface Mount -65°C ~ 150°C (TJ) 2 W SOT-223 PNP 500mV @ 5mA, 50mA 150 V
PN2369A TIN/LEAD
PN2369A TIN/LEAD
Download Datasheet for PN2369A TIN/LEAD
Central Semiconductor Corp
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 200 mA 40 @ 10mA, 1V 500MHz Through Hole -65°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 500mV @ 10mA, 100mA 15 V
TIP127L-BP
TIP127L-BP
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Micro Commercial Co.
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 5 A 1000 @ 500mA, 3V - Through Hole -55°C ~ 150°C 2 W TO-220AB PNP 4V @ 20mA, 5A 100 V
MCH6201-TL-E
MCH6201-TL-E
On Semiconductor
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2N5195G
2N5195G
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On Semiconductor
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 4 A 20 @ 1.5A, 2V 2MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-126 PNP 1.4V @ 1A, 4A 80 V
MPSA18 PBFREE
MPSA18 PBFREE
Download Datasheet for MPSA18 PBFREE
Central Semiconductor Corp
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 200 mA 500 @ 10mA, 5V 100MHz Through Hole -65°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 5mA, 50mA 45 V
2N5308 PBFREE
2N5308 PBFREE
Download Datasheet for 2N5308 PBFREE
Central Semiconductor Corp
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 300 mA 7000 @ 2mA, 5V 60MHz Through Hole -65°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - Darlington 1.4V @ 200µA, 200mA 40 V
2SC4995YD-TL-E
2SC4995YD-TL-E
Renesas
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2SC3851A
2SC3851A
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Sanken
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 4 A 40 @ 1A, 4V 15MHz Through Hole 150°C (TJ) 25 W TO-220F NPN 500mV @ 200mA, 2A 80 V
ST13009
ST13009
STMicroelectronics
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 12 A 10 @ 8A, 5V - Through Hole 150°C (TJ) 100 W TO-220 NPN 2.5V @ 3A, 12A 400 V
2SA1667
2SA1667
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Sanken
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 2 A 60 @ 700mA, 10V 20MHz Through Hole 150°C (TJ) 25 W TO-220F PNP 1V @ 70mA, 700mA 150 V
NJW0302G
NJW0302G
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On Semiconductor
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 15 A 75 @ 3A, 5V 30MHz Through Hole -65°C ~ 150°C (TJ) 150 W TO-3P-3L PNP 1V @ 500mA, 5A 250 V
2N5320 PBFREE
2N5320 PBFREE
Download Datasheet for 2N5320 PBFREE
Central Semiconductor Corp
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 2 A 30 @ 500mA, 4V 50MHz Through Hole -65°C ~ 200°C (TJ) 10 W TO-39 NPN 500mV @ 50mA, 500mA 75 V
2N5322 PBFREE
2N5322 PBFREE
Download Datasheet for 2N5322 PBFREE
Central Semiconductor Corp
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 2 A 30 @ 500mA, 4V 50MHz Through Hole -65°C ~ 200°C (TJ) 10 W TO-39 PNP 700mV @ 50mA, 500mA 75 V
FMMT413TD
FMMT413TD
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Diodes Incorporated
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 100 mA 50 @ 10mA, 10V 150MHz Surface Mount -55°C ~ 150°C (TJ) 330 mW SOT-23-3 NPN - Avalanche Mode 150mV @ 1mA, 10mA 50 V
2SC4886
2SC4886
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Sanken
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 14 A 50 @ 5A, 4V 60MHz Through Hole 150°C (TJ) 80 W TO-3PF NPN 2V @ 500mA, 5A 150 V
2SA1860
2SA1860
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Sanken
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 14 A 50 @ 5A, 4V 50MHz Through Hole 150°C (TJ) 80 W TO-3PF PNP 2V @ 500mA, 5A 150 V
2SC5242OTU
2SC5242OTU
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On Semiconductor
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 17 A 80 @ 1A, 5V 30MHz Through Hole -55°C ~ 150°C (TJ) 130 W TO-3P NPN 3V @ 800mA, 8A 250 V
2SC4520S-TD-E
2SC4520S-TD-E
On Semiconductor
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MJ15022G
MJ15022G
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On Semiconductor
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 16 A 15 @ 8A, 4V 4MHz Through Hole -65°C ~ 200°C (TJ) 250 W TO-204 (TO-3) NPN 4V @ 3.2A, 16A 200 V
MJ15023G
MJ15023G
Download Datasheet for MJ15023G
On Semiconductor
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 16 A 15 @ 8A, 4V 4MHz Through Hole -65°C ~ 200°C (TJ) 250 W TO-204 (TO-3) PNP 4V @ 3.2A, 16A 200 V
MJ14002G
MJ14002G
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On Semiconductor
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 60 A 15 @ 50A, 3V - Through Hole -65°C ~ 200°C (TJ) 300 W TO-204 (TO-3) NPN 3V @ 12A, 60A 80 V
NS2029M3T5G
NS2029M3T5G
Download Datasheet for NS2029M3T5G
On Semiconductor
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 100 mA 120 @ 1mA, 6V 140MHz Surface Mount -55°C ~ 150°C (TJ) 265 mW SOT-723 PNP 500mV @ 5mA, 50mA 50 V
2SCR522EBTL
2SCR522EBTL
ROHM Semiconductor
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 200 mA 120 @ 1mA, 2V 400MHz Surface Mount 150°C (TJ) 150 mW EMT3F (SOT-416FL) NPN 300mV @ 10mA, 100mA 20 V
BCX71H,235
BCX71H,235
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Nexperia USA Inc.
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 100 mA 180 @ 2mA, 5V 100MHz Surface Mount 150°C (TJ) 250 mW TO-236AB PNP 550mV @ 1.25mA, 50mA 45 V
BCP69-16,115
BCP69-16,115
Nexperia USA Inc.
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 1 A 100 @ 500mA, 1V 140MHz Surface Mount 150°C (TJ) 1.4 W SOT-223 PNP 500mV @ 100mA, 1A 20 V
BC859CW,115
BC859CW,115
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Nexperia USA Inc.
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 100 mA 420 @ 2mA, 5V 100MHz Surface Mount 150°C (TJ) 200 mW SOT-323 PNP 650mV @ 5mA, 100mA 30 V
BC860B,235
BC860B,235
Download Datasheet for BC860B,235
Nexperia USA Inc.
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 100 mA 220 @ 2mA, 5V 100MHz Surface Mount 150°C (TJ) 250 mW TO-236AB PNP 650mV @ 5mA, 100mA 45 V
BC849B,215
BC849B,215
Nexperia USA Inc.
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 100 mA 200 @ 2mA, 5V 100MHz Surface Mount 150°C (TJ) 250 mW TO-236AB NPN 600mV @ 5mA, 100mA 30 V
BC849B,235
BC849B,235
Nexperia USA Inc.
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 100 mA 200 @ 2mA, 5V 100MHz Surface Mount 150°C (TJ) 250 mW TO-236AB NPN 600mV @ 5mA, 100mA 30 V
BCW60C,215
BCW60C,215
Download Datasheet for BCW60C,215
Nexperia USA Inc.
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 100 mA 250 @ 2mA, 5V 250MHz Surface Mount 150°C (TJ) 250 mW TO-236AB NPN 550mV @ 1.25mA, 50mA 32 V
BCW60C,235
BCW60C,235
Download Datasheet for BCW60C,235
Nexperia USA Inc.
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 100 mA 250 @ 2mA, 5V 250MHz Surface Mount 150°C (TJ) 250 mW TO-236AB NPN 550mV @ 1.25mA, 50mA 32 V
MSC2712GT1G
MSC2712GT1G
Download Datasheet for MSC2712GT1G
On Semiconductor
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 100 mA 200 @ 2mA, 6V 50MHz Surface Mount 150°C (TJ) 200 mW SC-59 NPN 500mV @ 10mA, 100mA 50 V
Showing 20301-20350 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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